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公开(公告)号：US09976914B2
公开(公告)日：2018-05-22
申请号：US14308470
申请日：2014-06-18
Inventor： Praveen Kumar Radhakrishnan , Dino Faralli
CPC classification number: B01L3/502715 , B01L3/502707 , B01L2300/0627 , B01L2300/0848 , B01L2300/12 , G01F1/6845 , G01F1/6888 , G01K7/02 , G01K7/021 , H01L35/32 , H01L35/325 , Y10T29/41
Abstract: A microfluidic-based sensor, comprising: a semiconductor body, having a first and a second side opposite to one another in a direction; a buried channel, extending within the semiconductor body; a structural layer, of dielectric or insulating material, formed over the first side of the semiconductor body at least partially suspended above the buried channel; and a first thermocouple element, including a first strip, of a first electrical conductive material, and a second strip, of a second electrical conductive material different from the first electrical conductive material, electrically coupled to the first strip. The first thermocouple element is buried in the structural layer and partially extends over the buried channel at a first location. A corresponding manufacturing method is disclosed.
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12.发明授权Magnetoresistive sensor integrated in a chip for detecting magnetic fields perpendicular to the chip and manufacturing process thereof 有权集成在用于检测垂直于芯片的磁场的芯片中的磁阻传感器及其制造方法公开(公告)号：US09568566B2
公开(公告)日：2017-02-14
申请号：US14102899
申请日：2013-12-11
Applicant: STMicroelectronics S.r.l.
Inventor： Dario Paci , Dino Faralli , Andrea Picco
CPC classification number: G01R33/09 , G01R33/0011 , G01R33/0052 , G01R33/096
Abstract: An integrated magnetoresistive sensor, formed in a chip including a substrate having a surface and an insulating region covering the surface of the substrate. A magnetoresistor, of a first ferromagnetic material, is formed in the insulating region and has a sensitivity plane parallel to the surface. A concentrator of a second ferromagnetic material is formed in the substrate and has at least one arm extending in a transverse direction to the sensitivity plane. The arm has one end in contact with the magnetoresistor.
Abstract translation: 一种集成磁阻传感器，其形成在包括具有覆盖基板的表面的表面和绝缘区域的基板的芯片中。 第一铁磁材料的磁阻电阻器形成在绝缘区域中并且具有平行于表面的灵敏度平面。 第二铁磁材料的集中器形成在基板中，并且具有至少一个在横向方向上延伸到灵敏度平面的臂。 臂的一端与磁电阻接触。
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公开(公告)号：US20160121612A1
公开(公告)日：2016-05-05
申请号：US14981701
申请日：2015-12-28
Applicant: STMicroelectronics S.r.l.
Inventor： Dino Faralli , Laura Maria Castoldi , Paolo Ferrari , Marta Carminati
IPC: B41J2/16
CPC classification number: B41J2/1433 , B41J2/14129 , B41J2/1603 , B41J2/162 , B41J2/1623 , B41J2/1626 , B41J2/1628 , B41J2/1629 , B41J2/1632 , B41J2/1642 , B41J2/1643
Abstract: Embodiments disclose herein are directed to a microfluidic delivery device that has a predominantly semiconductor structure, such as silicon. In particular, the structure for delivering fluid may be formed from polycrystalline silicon, also called polysilicon, or epitaxial silicon. The microfluidic delivery device that predominantly uses silicon based materials to form the structures that are in contact with the dispensed fluid results in a device that is compatible with a wide set of fluids and applications.
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公开(公告)号：US11417827B2
公开(公告)日：2022-08-16
申请号：US16215821
申请日：2018-12-11
Applicant: STMicroelectronics S.r.l.
Inventor： Maria Fortuna Bevilacqua , Flavio Francesco Villa , Rossana Scaldaferri , Valeria Casuscelli , Andrea Di Matteo , Dino Faralli
IPC: H01L41/00 , H01L41/113 , H01L41/047 , H01L41/22 , H02N2/18 , H01L41/053 , H01L41/187 , H01L41/25 , H01L41/29 , H01L41/332
Abstract: A MEMS piezoelectric device includes a monolithic semiconductor body having first and second main surfaces extending parallel to a horizontal plane formed by first and second horizontal axes. A housing cavity is arranged within the monolithic semiconductor body. A membrane is suspended above the housing cavity at the first main surface. A piezoelectric material layer is arranged above a first surface of the membrane with a proof mass coupled to a second surface, opposite to the first surface, along the vertical axis. An electrode arrangement is provided in contact with the piezoelectric material layer. The proof mass causes deformation of the piezoelectric material layer in response to environmental mechanical vibrations. The proof mass is coupled to the membrane by a connection element arranged, in a central position, between the membrane and the proof mass in the direction of the vertical axis.
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公开(公告)号：US20170182778A1
公开(公告)日：2017-06-29
申请号：US15179096
申请日：2016-06-10
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Mauro Cattaneo , Carlo Luigi Prelini , Lorenzo Colombo , Dino Faralli , Alessandra Sciutti , Lorenzo Tentori
IPC: B41J2/16
CPC classification number: B41J2/1626 , B41J2/01 , B41J2/135 , B41J2/16 , B41J2/1607 , B41J2/161 , B41J2/162 , B41J2/1621 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , Y10T29/49401
Abstract: A method for manufacturing a device for ejecting a fluid, including producing a nozzle plate including: forming a first nozzle cavity, having a first diameter, in a first semiconductor body; forming a hydrophilic layer at least in part in the first nozzle cavity; forming a structural layer on the hydrophilic layer; etching the structural layer to form a second nozzle cavity aligned to the first nozzle cavity in a fluid-ejection direction and having a second diameter larger than the first diameter; proceeding with etching of the structural layer for removing portions thereof in the first nozzle cavity, to reach the hydrophilic layer and arranged in fluid communication the first and second nozzle cavities; and coupling the nozzle plate with a chamber for containing the fluid.
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Patent Agency Ranking
16.发明授权公开(公告)号：US09321628B2
公开(公告)日：2016-04-26
申请号：US14316583
申请日：2014-06-26
Inventor： Dino Faralli , Benedetto Vigna , Laura Maria Castoldi
CPC classification number: B81B7/0061 , B81B2201/0264 , B81B2203/0127 , B81B2207/012 , B81C1/00269 , B81C2203/0118 , H01L2224/32145 , H01L2224/48091 , H01L2224/73265 , H01L2924/10155 , H01L2924/15151 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A MEMS device wherein a die of semiconductor material has a first face and a second face. A membrane is formed in or on the die and faces the first surface. A cap is fixed to the first face of the first die and is spaced apart from the membrane by a space. The die is fixed, on its second face, to an ASIC, which integrates a circuit for processing the signals generated by the die. The ASIC is in turn fixed on a support. A packaging region coats the die, the cap, and the ASIC and seals them from the outside environment. A fluidic path is formed through the support, the ASIC, and the first die, and connects the membrane and the first face of the die with the outside, without requiring holes in the cap.
Abstract translation: 一种MEMS器件，其中半导体材料的管芯具有第一面和第二面。 在模具中或模具上形成膜并面向第一表面。 盖子固定在第一模具的第一面上并且与隔膜隔开一个空间。 芯片在其第二面被固定到ASIC，其集成了用于处理由芯片产生的信号的电路。 ASIC依次固定在支持上。 包装区域涂覆模具，盖子和ASIC，并将它们与外部环境密封。 通过支撑件，ASIC和第一模具形成流体路径，并且将膜和模具的第一面与外部连接，而不需要在盖中的孔。
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公开(公告)号：US11001061B2
公开(公告)日：2021-05-11
申请号：US14981701
申请日：2015-12-28
Applicant: STMicroelectronics S.r.l.
Inventor： Dino Faralli , Laura Maria Castoldi , Paolo Ferrari , Marta Carminati
IPC: B41J2/16 , B41J2/14 , H01L21/02 , H01L21/311 , H01L21/285 , C23C16/34
Abstract: Methods for manufacturing a microfluidic delivery device comprising a semiconductor structure, such as silicon, are provided. In particular, the structure for delivering fluid may be formed from polycrystalline silicon, also called polysilicon, or epitaxial silicon. The microfluidic delivery device that predominantly uses semiconductor material, such as silicon, to form the structures that are in contact with the dispensed fluid results in a device that is compatible with a wide set of fluids and applications.
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公开(公告)号：US10245834B2
公开(公告)日：2019-04-02
申请号：US15812960
申请日：2017-11-14
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Mauro Cattaneo , Carlo Luigi Prelini , Lorenzo Colombo , Dino Faralli , Alessandra Sciutti , Lorenzo Tentori
Abstract: A method for manufacturing a device for ejecting a fluid, including producing a nozzle plate including: forming a first nozzle cavity, having a first diameter, in a first semiconductor body; forming a hydrophilic layer at least in part in the first nozzle cavity; forming a structural layer on the hydrophilic layer; etching the structural layer to form a second nozzle cavity aligned to the first nozzle cavity in a fluid-ejection direction and having a second diameter larger than the first diameter; proceeding with etching of the structural layer for removing portions thereof in the first nozzle cavity, to reach the hydrophilic layer and arranged in fluid communication the first and second nozzle cavities; and coupling the nozzle plate with a chamber for containing the fluid.
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公开(公告)号：US10186654B2
公开(公告)日：2019-01-22
申请号：US15163230
申请日：2016-05-24
Applicant: STMicroelectronics S.r.l.
Inventor： Maria Fortuna Bevilacqua , Flavio Francesco Villa , Rossana Scaldaferri , Valeria Casuscelli , Andrea Di Matteo , Dino Faralli
IPC: H01L41/09 , H01L41/053 , H01L41/22 , H01L41/113 , H01L41/047 , H02N2/18 , H01L41/187 , H01L41/25 , H01L41/29 , H01L41/332
Abstract: A MEMS piezoelectric device includes a monolithic semiconductor body having first and second main surfaces extending parallel to a horizontal plane formed by first and second horizontal axes. A housing cavity is arranged within the monolithic semiconductor body. A membrane is suspended above the housing cavity at the first main surface. A piezoelectric material layer is arranged above a first surface of the membrane with a proof mass coupled to a second surface, opposite to the first surface, along the vertical axis. An electrode arrangement is provided in contact with the piezoelectric material layer. The proof mass causes deformation of the piezoelectric material layer in response to environmental mechanical vibrations. The proof mass is coupled to the membrane by a connection element arranged, in a central position, between the membrane and the proof mass in the direction of the vertical axis.
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公开(公告)号：US20170186940A1
公开(公告)日：2017-06-29
申请号：US15163230
申请日：2016-05-24
Applicant: STMicroelectronics S.r.l.
Inventor： Maria Fortuna Bevilacqua , Flavio Francesco Villa , Rossana Scaldaferri , Valeria Casuscelli , Andrea Di Matteo , Dino Faralli
IPC: H01L41/113 , H01L41/053 , H01L41/332 , H01L41/25 , H01L41/29 , H01L41/047 , H01L41/187
CPC classification number: H01L41/1138 , H01L41/047 , H01L41/053 , H01L41/1134 , H01L41/1876 , H01L41/22 , H01L41/25 , H01L41/29 , H01L41/332 , H02N2/186
Abstract: A MEMS piezoelectric device includes a monolithic semiconductor body having first and second main surfaces extending parallel to a horizontal plane formed by first and second horizontal axes. A housing cavity is arranged within the monolithic semiconductor body. A membrane is suspended above the housing cavity at the first main surface. A piezoelectric material layer is arranged above a first surface of the membrane with a proof mass coupled to a second surface, opposite to the first surface, along the vertical axis. An electrode arrangement is provided in contact with the piezoelectric material layer. The proof mass causes deformation of the piezoelectric material layer in response to environmental mechanical vibrations. The proof mass is coupled to the membrane by a connection element arranged, in a central position, between the membrane and the proof mass in the direction of the vertical axis.
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