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    PATTERNING METHOD USING SURFACE PLASMON
    16.
    发明申请
    PATTERNING METHOD USING SURFACE PLASMON 有权
    使用表面等离子体的方法

    公开(公告)号：US20150234286A1

    公开(公告)日：2015-08-20

    申请号：US14444255

    申请日：2014-07-28

    Applicant: Samsung Display Co., Ltd.

    Inventor： Yong Son ,  Min Kang ,  Bong-Yeon Kim ,  Dong-Eon Lee ,  Hyun-joo Lee

    IPC: G03F7/40 ,  G03F7/16

    CPC classification number: G03F7/2016 ,  G03F7/70375

    Abstract: A method for forming a fine pattern includes forming an etching target material layer on a substrate, forming a first photoresist layer on the etching target material layer, forming a metal pattern on the first photoresist layer, the metal pattern having a plurality of lines and thin film lines alternately arranged, the lines having predetermined linewidth and thickness and are spaced apart from each other by a predetermined distance, exciting surface plasmons in the metal pattern by light irradiation to produce a surface plasmon resonance that exposes a fine first pattern shape in the first photoresist layer, forming a first photoresist pattern by removing the metal pattern and developing the first photoresist layer, and etching the etching target material layer by using the first photoresist pattern as a mask.

    Abstract translation: 形成精细图案的方法包括在基板上形成蚀刻目标材料层，在蚀刻靶材料层上形成第一光致抗蚀剂层，在第一光致抗蚀剂层上形成金属图案，金属图案具有多条线，薄 膜线交替布置，线具有预定的线宽和厚度并且彼此隔开预定距离，通过光照射激发金属图案中的表面等离子体激元，以产生表面等离子体共振，其在第一 光致抗蚀剂层，通过去除金属图案和显影第一光致抗蚀剂层形成第一光致抗蚀剂图案，并且通过使用第一光致抗蚀剂图案作为掩模来蚀刻蚀刻目标材料层。

    DISPLAY APPARATUS
    17.
    发明公开
    DISPLAY APPARATUS 审中-公开

    公开(公告)号：US20240324299A1

    公开(公告)日：2024-09-26

    申请号：US18408189

    申请日：2024-01-09

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jungsuk Bang ,  Min Kang ,  Jihoon Yang

    IPC: H10K59/122 ,  H10K59/80

    CPC classification number: H10K59/122 ,  H10K59/80515

    Abstract: A display apparatus includes a substrate, a first pixel electrode over the substrate, wherein a first distance between a first portion of the first pixel electrode and the substrate is different from a second distance between a second portion of the first pixel electrode and the substrate, and a pixel-defining layer covering a portion of the first pixel electrode and having a first opening exposing a central portion of the first pixel electrode, wherein a first taper angle of an inner surface of the first opening at a first defined portion covering the first portion is different from a second taper angle of an inner surface of the first opening at a second defined portion covering the second portion.

    PHASE SHIFT MASK AND METHOD OF FORMING PATTERNS USING THE SAME
    20.
    发明申请
    PHASE SHIFT MASK AND METHOD OF FORMING PATTERNS USING THE SAME 有权
    相移片掩模和使用其形成图案的方法

    公开(公告)号：US20150293438A1

    公开(公告)日：2015-10-15

    申请号：US14604459

    申请日：2015-01-23

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： DongEon Lee ,  Min Kang ,  Bong Yeon Kim ,  Yong Son ,  Junhyuk Woo ,  Hyunjoo Lee ,  Jinho Ju

    IPC: G03F1/26

    CPC classification number: G03F1/30 ,  G03F1/26 ,  G03F7/2002 ,  G03F7/2008 ,  G03F7/70191 ,  G03F7/70283 ,  G03F9/7003 ,  G03F9/7007

    Abstract: A method of forming a pattern includes: preparing a target substrate including a photoresist layer on a base substrate; aligning a phase shift mask to the target substrate, the phase shift mask including a mask substrate comparted into a first region including a first sub region and second sub regions at sides of the first sub region, and second regions at sides of the first region, the phase shift mask including a phase shift layer on the mask substrate corresponding to the first region; fully exposing the photoresist layer at the first sub region and the second regions by utilizing the phase shift mask; and removing the photoresist layer at the first sub region and the second regions to form first and second photoresist patterns corresponding to the second sub regions. Transmittance of the phase shift layer is selected to fully expose the photoresist layer in the first sub region.

    Abstract translation: 形成图案的方法包括：在基底基板上制备包括光致抗蚀剂层的目标基板; 将相移掩模对准目标衬底，所述相移掩模包括掩模衬底，所述掩模衬底分别包括在所述第一子区域的侧面处包括第一子区域和第二子区域的第一区域，以及所述第一区域的侧面处的第二区域， 所述相移掩模包括对应于所述第一区域的所述掩模基板上的相移层; 通过利用相移掩模使第一子区和第二区的光致抗蚀剂层完全曝光; 以及去除所述第一子区域和所述第二区域处的所述光致抗蚀剂层，以形成对应于所述第二子区域的第一和第二光致抗蚀剂图案。 选择相移层的透射率以完全暴露第一子区域中的光致抗蚀剂层。

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