公开(公告)号：US11594559B2

公开(公告)日：2023-02-28

申请号：US17157184

申请日：2021-01-25

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok Park ,  So Young Koo ,  Eok Su Kim ,  Hyung Jun Kim ,  Sang Woo Sohn ,  Jun Hyung Lim ,  Kyung Jin Jeon

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/12

Abstract: A display device may include a first gate electrode disposed on a substrate, a buffer layer disposed on the first gate electrode, a first active pattern on the buffer layer, the first active pattern overlapping the first gate electrode and including an oxide semiconductor, a second active pattern on the buffer layer, spaced apart from the first active pattern, and including an oxide semiconductor, the second active pattern including a channel region, and a source region and a drain region, a source pattern and a drain pattern respectively at ends of the first active pattern, a first insulation pattern disposed on the first active pattern, a second insulation pattern disposed on the channel region, a first oxygen supply pattern on the first insulation pattern, a second oxygen supply pattern on the second insulation pattern, and a second gate electrode on the second oxygen supply pattern.

公开(公告)号：US11469283B2

公开(公告)日：2022-10-11

申请号：US16952762

申请日：2020-11-19

Applicant: Samsung Display Co., LTD.

Inventor： Myoung Hwa Kim ,  Joon Seok Park ,  Tae Sang Kim ,  Yeon Keon Moon ,  Geun Chul Park ,  Sang Woo Sohn ,  Jun Hyung Lim ,  Hye Lim Choi

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/423

Abstract: A display device is provided. The display device includes a substrate, a first active layer of a first transistor and a second active layer of a second transistor which are disposed on the substrate, a first gate insulating layer disposed on the first active layer, an oxide layer disposed on the first gate insulating layer and including an oxide semiconductor, a first gate electrode disposed on the oxide layer, a second gate insulating layer disposed on the first gate electrode and the second active layer, and a second gate electrode which overlaps the second active layer in a thickness direction of the substrate and is disposed on the second gate insulating layer, where the oxide layer overlaps the first active layer and does not overlap the second active layer in the thickness direction.

公开(公告)号：US11063110B2

公开(公告)日：2021-07-13

申请号：US16164796

申请日：2018-10-19

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Geol Lee ,  Kyeong Su Ko ,  Sang Won Shin ,  Dong Min Lee ,  Sang Gab Kim ,  Sang Woo Sohn ,  Hyun Eok Shin ,  Shin Il Choi

IPC: H01L27/32 ,  H01L27/12 ,  H01L51/56 ,  H01L23/528 ,  H01L23/532 ,  G02F1/1362

Abstract: A conductive pattern for a display device includes a first layer including aluminum or an aluminum alloy disposed on a substrate and forming a first taper angle with the substrate, and a second layer disposed on the first layer forming a second taper angle with the first layer, in which the second taper angle is smaller than the first taper angle.

公开(公告)号：US09410234B2

公开(公告)日：2016-08-09

申请号：US14670403

申请日：2015-03-26

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Ju Kang ,  Sang Woo Sohn ,  Sang Won Shin ,  Dong Hee Lee ,  Chang Oh Jeong

IPC: C23C14/34 ,  C23C14/04

CPC classification number: C23C14/044 ,  H01J37/34 ,  H01J37/3447

Abstract: Provided are a sputtering device and a method of forming a layer using the same.The method of forming a layer using the sputtering device includes: placing a substrate within a chamber; depositing target particles emitted from a target, which faces the substrate, on the substrate using a sputtering process; and horizontally moving a plurality of shield rods, which are installed in a shield mask disposed between the substrate and the target and are separated from each other along a first direction, during the sputtering process.

Abstract translation: 提供溅射装置和使用其形成层的方法。 使用溅射装置形成层的方法包括：将基板放置在室内; 使用溅射工艺将从面向衬底的靶发射的靶颗粒沉积在衬底上; 并且水平移动多个屏蔽杆，其安装在设置在基板和靶之间的屏蔽掩模中，并且在溅射过程期间沿着第一方向彼此分离。

公开(公告)号：US11664386B2

公开(公告)日：2023-05-30

申请号：US16906948

申请日：2020-06-19

Applicant: Samsung Display Co., Ltd.

Inventor： Yeon Keon Moon ,  Tae Sang Kim ,  Joon Seok Park ,  Myoung Hwa Kim ,  Hyung Jun Kim ,  Sang Woo Sohn ,  Hye Lim Choi

IPC: H01L27/14 ,  H01L27/12

CPC classification number: H01L27/1237 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259

Abstract: A display device includes: a substrate; a first active layer of a first transistor and a second active layer of a second transistor on the substrate; a first gate insulating layer on the first active layer; a first gate electrode on the first gate insulating layer; a second gate insulating layer on the second active layer; and a second gate electrode on the second gate insulating layer, wherein a hydrogen concentration of the first gate insulating layer is lower than a hydrogen concentration of the second gate insulating layer.

公开(公告)号：US11251247B2

公开(公告)日：2022-02-15

申请号：US16843764

申请日：2020-04-08

Applicant: Samsung Display Co., Ltd.

Inventor： Hyung Jun Kim ,  Myoung Hwa Kim ,  Tae Sang Kim ,  Yeon Keon Moon ,  Joon Seok Park ,  Sang Woo Sohn ,  Sang Won Shin ,  Jun Hyung Lim ,  Hye Lim Choi

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L27/32 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L21/4763 ,  H01L21/465 ,  H01L21/4757 ,  H01L27/12

Abstract: A display device and a method for fabricating the same are provided. The display device comprises pixels connected to scan lines, and to data lines crossing the scan lines, each of the pixels including a light emitting element, and a first transistor configured to control a driving current supplied to the light emitting element according to a data voltage applied from the data line, the first transistor including a first active layer having an oxide semiconductor, and a first oxide layer on the first active layer and having a crystalline oxide containing tin (Sn).

公开(公告)号：US09824788B2

公开(公告)日：2017-11-21

申请号：US14659730

申请日：2015-03-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Su Hyoung Kang ,  Sang Woo Sohn ,  Chang Oh Jeong ,  Gwang Min Cha

IPC: H01B1/02 ,  H01L33/44 ,  H01L33/62 ,  H01B5/02 ,  H01L27/32

CPC classification number: H01B1/026 ,  H01L27/3276

Abstract: Provided is a metal wire. The metal wire includes a copper layer, and at least one barrier layer. The barrier layer is disposed on at least one of an upper part and a lower part of the copper layer. The barrier layer includes an alloy including copper, nickel, and zinc.

公开(公告)号：US09722089B2

公开(公告)日：2017-08-01

申请号：US14482413

申请日：2014-09-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yeon Keon Moon ,  Sang Woo Sohn ,  Katsushi Kishimoto ,  Takayuki Fukasawa ,  Sang Won Shin

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  C23C14/08 ,  C23C14/34

CPC classification number: H01L29/7869 ,  C23C14/083 ,  C23C14/086 ,  C23C14/3464 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/02631 ,  H01L29/66969

Abstract: A thin film transistor array panel includes a substrate and a gate line disposed on the substrate. The gate line includes a gate electrode. A gate insulating layer is disposed on the gate line. An oxide semiconductor layer is disposed on the gate insulating layer. The oxide semiconductor layer at least partially overlaps the gate electrode. A data line is disposed on the oxide semiconductor layer. The data line includes a source electrode and a drain electrode facing the source electrode. The oxide semiconductor layer includes tungsten, indium, zinc, or tin.

公开(公告)号：US09627548B2

公开(公告)日：2017-04-18

申请号：US14841559

申请日：2015-08-31

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Ju Kang ,  Dong Hee Lee ,  Gwang Min Cha ,  Sang Won Shin ,  Sang Woo Sohn

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L29/45 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L21/47635 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76855 ,  H01L21/76867 ,  H01L23/53233 ,  H01L23/53238 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor array panel that includes: a substrate; a gate electrode disposed on the substrate; a semiconductor layer disposed on the substrate; a gate insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode disposed on the semiconductor layer and a drain electrode facing the source electrode; a metal oxide layer covering the source electrode and the drain electrode; and a passivation layer covering the source electrode, the drain electrode, and the metal oxide layer, wherein the source electrode and the drain electrode include a first material and a second material which is added to the first material and metal included in the metal oxide layer is formed by diffusing the second material.

公开(公告)号：US20150255611A1

公开(公告)日：2015-09-10

申请号：US14487916

申请日：2014-09-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： KATSUSHI KISHIMOTO ,  Yoshinori Tanaka ,  Yeon Keon Moon ,  Sang Woo Sohn ,  Sang Won Shin ,  Takayuki Fukasawa

IPC: H01L29/786 ,  H01L29/26 ,  H01J37/34

CPC classification number: H01L29/7869 ,  C23C14/3414 ,  H01J37/3429 ,  H01J37/3491 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78693

Abstract: An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.

Abstract translation: 氧化物溅射靶包括铟（In），锌（Zn），锡（Sn）和镓（Ga）以及钨（W）中的至少一种，其量为0.005mol％至1mol％。