Abstract:
The method of forming a layer using the sputtering device includes: placing a substrate within a chamber; depositing target particles emitted from a target, which faces the substrate, on the substrate using a sputtering process; and horizontally moving a plurality of shield rods, which are installed in a shield mask disposed between the substrate and the target and are separated from each other along a first direction, during the sputtering process.
Abstract:
The present invention relates to a display device and a manufacturing method thereof, wherein a spoilage layer generated in a manufacturing process is removed, and a manufacturing method of a display device according to an exemplary embodiment of the present invention includes: forming a thin film transistor on a substrate including a plurality of pixel areas; forming a pixel electrode connected to the thin film transistor in the pixel area; forming a sacrificial layer on the pixel electrode; forming a barrier layer on the sacrificial layer; forming a common electrode on the barrier layer; forming a roof layer on the common electrode; patterning the barrier layer, the common electrode, and the roof layer to exposed a portion of the sacrificial layer thereby forming an injection hole; removing the sacrificial layer to form a microcavity for a plurality of pixel areas; removing the barrier layer.
Abstract:
The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu).
Abstract:
A display device including a substrate and a wire grid polarizer disposed on the substrate, wherein the wire grid polarizer includes a first wire grid layer having a first wire thickness and including a plurality of first wire grids separated from each other, a first middle layer disposed on the first wire grid layer, the first middle layer including a first portion having a first middle layer thickness and a second portion having a second middle layer thickness thinner than the first middle layer thickness, the second middle layer thickness being thinner than the first wire thickness, and a second wire grid layer disposed on the first middle layer and including a plurality of second wire grids separated from each other, the plurality of second wire grids overlapping the second portion of the first middle layer.
Abstract:
A display device includes a gate line, a data line crossing the gate line, and a first transistor including a gate electrode electrically coupled to the gate line and a first electrode electrically coupled to the data line. At least one of the gate electrode of the first transistor, the first electrode of the first transistor, and a second electrode of the first transistor includes at least one of a first conductor layer and a second conductor layer. The first conductor layer includes a first metal layer and a second metal layer disposed on the first metal layer. The second conductor layer includes a third metal layer and a fourth metal layer disposed on the third metal layer. The second metal layer has a lower reflectivity than the first metal layer. The fourth metal layer has a lower reflectivity lower than the third metal layer.
Abstract:
An array test modulator, including a first glass; a second glass facing the first glass and including a common electrode; a liquid crystal layer between the first glass and the second glass; and a reflection layer between the second glass and the liquid crystal layer and including a metal oxide layer.
Abstract:
A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.
Abstract:
Provided is a metal wire. The metal wire includes a copper layer, and at least one barrier layer. The barrier layer is disposed on at least one of an upper part and a lower part of the copper layer. The barrier layer includes an alloy including copper, nickel, and zinc.
Abstract:
A liquid crystal display includes a substrate; a first electrode on the substrate; a second electrode on the first electrode and separated from the first electrode; a cavity defined between the first electrode and the second electrode; a first protection layer on the second electrode; a cover layer on the first protection layer; and a liquid crystal layer including liquid crystal molecules in the cavity. The second electrode includes metal oxide and zinc oxide.
Abstract:
A polarizer and a liquid crystal display including the polarizer, the polarizer including a plurality of metal lines extending in one direction and being arranged at regular intervals; and a plurality of low reflection layers on the plurality of metal lines, the plurality of low reflection layers contacting respective upper parts of the plurality of metal lines and having an interval and a width about equal to an interval and a width of the plurality of metal lines, wherein the interval of the plurality of metal lines is smaller than a wavelength of a visible ray, and light incident from an upper side of the plurality of low reflection layers is reflected with reflectivity equal to or smaller than 10%.