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公开(公告)号：US20220149132A1
公开(公告)日：2022-05-12
申请号：US17246989
申请日：2021-05-03
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Yeonkeon Moon , Taesang Kim , Joonseok Park , Sangwoo Sohn , Soyoung Koo
Abstract: A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a pixel circuit disposed on the substrate in the display area, where the pixel circuit includes a driving thin film transistor and a switching thin film transistor, and a display element connected to the pixel circuit. The driving thin film transistor includes a driving semiconductor layer having a single layer structure, the switching thin film transistor includes a switching semiconductor layer in which a first layer, a second layer, and a third layer, which are oxide semiconductors, are sequentially stacked one on another, and a conductivity of the second layer of the switching semiconductor layer is greater than respective conductivities of the first layer and the third layer of the switching semiconductor layer.
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公开(公告)号：US20210280667A1
公开(公告)日：2021-09-09
申请号：US17328026
申请日：2021-05-24
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Kyungjin Jeon , Joonseok Park , Soyoung Koo , Myounghwa Kim , Eoksu Kim , Taesang Kim , Hyungjun Kim , Yeonkeon Moon , Geunchul Park , Sangwoo Sohn , Junhyung Lim , Hyelim Choi
Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.
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13.发明授权公开(公告)号：US09070715B2
公开(公告)日：2015-06-30
申请号：US13716972
申请日：2012-12-17
Applicant: Samsung Display Co., Ltd.
Inventor： Sangwon Shin , Hyunju Kang , Sangwoo Sohn , Sukyoung Yang , Changoh Jeong
IPC: H01L23/34 , H01L29/66 , H01L21/324 , H01L21/67 , H01L21/677 , H01L27/12
CPC classification number: H01L29/66742 , H01L21/324 , H01L21/67109 , H01L21/67201 , H01L21/67745 , H01L27/1262
Abstract: Provided is a method for fabricating an array substrate. The method for fabricating the array substrate includes forming a semiconductor layer on a substrate, forming a gate electrode which is insulated from the semiconductor layer, forming source and drain electrodes which are insulated from the gate electrode and connected to the semiconductor layer, and forming a pixel electrode connected to the drain electrode. Here, at least one of the forming of the gate electrode, the forming of the source and drain electrodes, and the forming of the pixel electrode includes forming a conductive layer on the substrate, cooling the substrate on which the conductive layer is formed to a temperature of no greater than about 0° C., heating the cooled substrate, and patterning the conductive layer.
Abstract translation: 提供了一种制造阵列基板的方法。 制造阵列基板的方法包括在基板上形成半导体层，形成与半导体层绝缘的栅电极，形成与栅电极绝缘并连接到半导体层的源电极和漏电极，并形成 像素电极连接到漏电极。 这里，形成栅电极，形成源电极和漏电极以及形成像素电极中的至少一个包括在衬底上形成导电层，将形成有导电层的衬底冷却到 温度不大于约0℃，加热冷却的基底，并图形化导电层。
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公开(公告)号：US11723244B2
公开(公告)日：2023-08-08
申请号：US17152249
申请日：2021-01-19
Applicant: Samsung Display Co., Ltd.
Inventor： Hyelim Choi , Joonseok Park , Myounghwa Kim , Taesang Kim , Yeonkeon Moon , Geunchul Park , Sangwoo Sohn , Junhyung Lim
IPC: H10K59/131 , H10K59/122 , H10K59/12
CPC classification number: H10K59/131 , H10K59/122 , H10K59/1201
Abstract: A display device includes: a substrate including a first region and a second region; a first active layer located on the first region and including a first channel region, a first source region at one side of the first channel region, a first drain region at the other side of the first channel region, and a first extension region extending in a direction from the first source region to the second region; a first gate electrode located above the first active layer and overlapping the first channel region; a driving voltage line located on the first active layer, overlapping the first source region, and extending along the first extension region; a first connection electrode located on the first drain region; and a pixel electrode located above the first gate electrode and connected to the first connection electrode.
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公开(公告)号：US11696470B2
公开(公告)日：2023-07-04
申请号：US17246989
申请日：2021-05-03
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Yeonkeon Moon , Taesang Kim , Joonseok Park , Sangwoo Sohn , Soyoung Koo
CPC classification number: H10K59/1213 , H10K71/00 , H01L27/1225 , H01L27/1251 , H10K59/1201 , H10K59/38
Abstract: A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a pixel circuit disposed on the substrate in the display area, where the pixel circuit includes a driving thin film transistor and a switching thin film transistor, and a display element connected to the pixel circuit. The driving thin film transistor includes a driving semiconductor layer having a single layer structure, the switching thin film transistor includes a switching semiconductor layer in which a first layer, a second layer, and a third layer, which are oxide semiconductors, are sequentially stacked one on another, and a conductivity of the second layer of the switching semiconductor layer is greater than respective conductivities of the first layer and the third layer of the switching semiconductor layer.
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Patent Agency Ranking
公开(公告)号：US11367742B2
公开(公告)日：2022-06-21
申请号：US16544602
申请日：2019-08-19
Applicant: Samsung Display Co., Ltd.
Inventor： Hyuneok Shin , Kyeongsu Ko , Sanggab Kim , Hongsick Park , Sangwoo Sohn , Dokeun Song , Sangwon Shin , Sukyoung Yang , Dongmin Lee
IPC: H01L27/12
Abstract: A display panel includes: a base layer; a signal line disposed on the base layer, the signal line including: a first layer including aluminum; and a second layer directly disposed on the first layer, the second layer including a niobium-titanium alloy; a first thin film transistor connected to the signal line; a second thin film transistor disposed on the base layer; a capacitor electrically connected to the second thin film transistor; and a light emitting element electrically connected to the second thin film transistor.
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公开(公告)号：US20220037456A1
公开(公告)日：2022-02-03
申请号：US17368721
申请日：2021-07-06
Applicant: Samsung Display Co., Ltd.
Inventor： Geunchul Park , Joonseok Park , Myounghwa Kim , Taesang Kim , Yeonkeon Moon , Sangwoo Sohn , Junhyung Lim , Hyelim Choi
Abstract: A display apparatus includes a substrate, a first pixel, a second pixel, a first wire set, and a second wire set. The first pixel and the second pixel overlap the substrate and neighbor each other in a first direction. The first wire set extends in a second direction, includes a first conduction line and a first transmission line, and may transfer a first data signal. The first conduction line is positioned between the substrate and the first transmission line and is connected through the first transmission line to the first pixel. The second wire set extends in the second direction, includes a second conduction line and a second transmission line, and may transfer a second data signal. The second conduction line is positioned between the substrate and the second transmission line and electrically connects the second transmission line to the second pixel.
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公开(公告)号：US11183554B2
公开(公告)日：2021-11-23
申请号：US16709457
申请日：2019-12-10
Applicant: Samsung Display Co., Ltd.
Inventor： Dongmin Lee , Sangwoo Sohn , Sukyoung Yang , Dokeun Song , Kyeong Su Ko , Sanggab Kim , Sangwon Shin , Hyuneok Shin , Yunjong Yeo , Joongeol Lee
Abstract: A display device includes a first signal line including a first layer disposed on a substrate and containing aluminum (Al), a second layer disposed on the first layer and containing titanium nitride (TiNx), and a third layer disposed on the second layer and containing titanium (Ti), a second signal line crossing the first signal line, a first transistor including a first gate electrode connected to the first signal line and a first source electrode connected to the second signal line, and an organic light emitting diode disposed in a display area of the substrate to generate light corresponding to a data signal applied to the second signal line.
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公开(公告)号：US11049929B2
公开(公告)日：2021-06-29
申请号：US16804152
申请日：2020-02-28
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Kyungjin Jeon , Joonseok Park , Soyoung Koo , Myounghwa Kim , Eoksu Kim , Taesang Kim , Hyungjun Kim , Yeonkeon Moon , Geunchul Park , Sangwoo Sohn , Junhyung Lim , Hyelim Choi
Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.
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公开(公告)号：US11018263B2
公开(公告)日：2021-05-25
申请号：US16584828
申请日：2019-09-26
Applicant: Samsung Display Co., Ltd.
Inventor： Sangwoo Sohn , Sangwon Shin
IPC: H01L27/12 , H01L29/786 , H01L29/66 , H01L27/32
Abstract: A display device includes a semiconductor member, a first gate electrode, a pixel electrode, and a common electrode. The semiconductor member includes a source area, a drain area, and a channel area between the source area and the drain area. The first gate electrode includes a first gate barrier layer, a second gate barrier layer, and a gate metal layer. The first gate barrier layer overlaps the channel area. An oxide material of the first gate barrier layer is identical to an oxide material of the semiconductor member. The second gate barrier layer includes a metal oxide alloy and is positioned between the first gate barrier layer and the gate metal layer. The pixel electrode is electrically connected to the drain area. The common electrode overlaps the pixel electrode.
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