公开(公告)号：US20160315227A1

公开(公告)日：2016-10-27

申请号：US14949510

申请日：2015-11-23

Applicant: Samsung Display Co., Ltd.

Inventor： Su-Hyoung Kang ,  Gwang Min Cha ,  Chang Oh Jeong

IPC: H01L33/44 ,  H01L27/12 ,  H01L33/52

CPC classification number: H01L27/1288 ,  H01L21/7688 ,  H01L27/1218 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1266 ,  H01L51/5253 ,  H01L51/5256 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338

Abstract: A display device and a method of manufacturing the display device are disclosed. In one aspect, the method includes forming a sacrificial layer over a carrier substrate, forming a passivation barrier layer to cover upper and lateral sides of the sacrificial layer and forming a thin film transistor layer over the passivation barrier layer. The method also includes placing a mask over the thin film transistor layer so as to expose an edge portion of the passivation barrier layer, wherein the edge portion does not overlap the mask in the depth dimension of the display device. The method further includes removing the edge portion of the passivation barrier layer so as to form a barrier layer and separating the carrier substrate from the barrier layer via the sacrificial layer.

Abstract translation: 公开了一种显示装置及其制造方法。 在一个方面，该方法包括在载体衬底上形成牺牲层，形成钝化阻挡层以覆盖牺牲层的上侧和外侧，并在钝化阻挡层上形成薄膜晶体管层。 该方法还包括在薄膜晶体管层上放置掩模以暴露钝化阻挡层的边缘部分，其中边缘部分在显示装置的深度尺寸上不与掩模重叠。 该方法还包括去除钝化阻挡层的边缘部分以便形成阻挡层，并通过牺牲层将载体衬底与阻挡层分开。

公开(公告)号：US20140145178A1

公开(公告)日：2014-05-29

申请号：US13838219

申请日：2013-03-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YONG-SU LEE ,  Su-Hyoung Kang ,  Yoon-Ho Khang ,  Hyun-Jae Na ,  Sang-Ho Park ,  Se-Hwan Yu ,  Myoung-Geun Cha

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A switching element includes an active pattern including a channel portion, a source portion connected to the channel portion, and a drain portion connected to the channel portion, the source portion, a gate electrode overlapping the channel portion of the active pattern, a gate insulation layer disposed between the channel portion of the active pattern and the gate electrode, a source electrode disposed on the source portion of the active pattern to make ohmic contact with the source portion, and a drain electrode disposed on the drain portion of the active pattern to make ohmic contact with the drain portion. The drain portion and the channel portion of the active pattern include the same or substantially the same material.

Abstract translation: 开关元件包括有源图形，其包括沟道部分，连接到沟道部分的源极部分和连接到沟道部分的漏极部分，源极部分，与有源图案的沟道部分重叠的栅极电极，栅极绝缘层 设置在有源图案的沟道部分和栅电极之间的层，设置在有源图案的源极部分上以与源极部分欧姆接触的源电极以及设置在有源图案的漏极部分上的漏电极， 与漏极部分欧姆接触。 有源图案的漏极部分和沟道部分包括相同或基本上相同的材料。

公开(公告)号：US11872786B2

公开(公告)日：2024-01-16

申请号：US17444494

申请日：2021-08-05

Applicant: Samsung Display Co., Ltd.

Inventor： Minhyuck Kang ,  Yukihiro Miyazawa ,  Su-Hyoung Kang ,  Jeongeun Kim

IPC: B32B17/10 ,  B32B7/12 ,  B32B37/06 ,  B32B27/30 ,  B32B27/34

CPC classification number: B32B17/10027 ,  B32B7/12 ,  B32B17/10165 ,  B32B17/10963 ,  B32B27/308 ,  B32B27/34 ,  B32B37/06 ,  B32B2270/00 ,  B32B2307/73 ,  B32B2457/20 ,  B32B17/10005 ,  B32B2355/00

Abstract: A window is provided to include a glass substrate, an adhesive layer on the glass substrate, a polymer layer between the glass substrate and the adhesive layer, the polymer layer having a surface adjacent to the adhesive layer, the surface being hydrophilic at a first temperature and being hydrophobic at a second temperature higher than the first temperature, and a protective layer on the adhesive layer. Thereby, when the protective layer is damaged, only the protective layer may be replaced without replacing a glass substrate.

公开(公告)号：US20170200740A1

公开(公告)日：2017-07-13

申请号：US15460161

申请日：2017-03-15

Applicant: Samsung Display Co., Ltd.

Inventor： Su-Hyoung Kang ,  Seung-Hwan Cho ,  Yoon-Ho Khang ,  Jong-Chan Lee

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/78645 ,  H01L29/7869

Abstract: A thin film transistor includes a semiconductor pattern formed on a substrate, the semiconductor pattern being formed of an oxide semiconductor and including a source area, a drain area, and an intermediate area that is formed between the source area and the drain area and includes a plurality of first areas and a second area having higher conductivity than the first areas; a first insulating pattern formed to cover at least the first areas; a second insulating film formed to face the second area, the source area and the drain area; a gate electrode formed on the semiconductor pattern and insulated from the semiconductor pattern by the first insulating pattern and the second insulating film; and source and drain electrodes insulated from the gate electrode and being in contact with the source area and the drain area.

公开(公告)号：US09276086B2

公开(公告)日：2016-03-01

申请号：US14623693

申请日：2015-02-17

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Ho Park ,  Su-Hyoung Kang ,  Dong-Hwan Shim ,  Yoon-Ho Khang ,  Se-Hwan Yu ,  Min-Jung Lee ,  Yong-Su Lee

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/786 ,  H01L21/28

CPC classification number: H01L27/127 ,  H01L21/28008 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

公开(公告)号：US08884286B2

公开(公告)日：2014-11-11

申请号：US13838219

申请日：2013-03-15

Applicant: Samsung Display Co., Ltd.

Inventor： Yong-Su Lee ,  Su-Hyoung Kang ,  Yoon-Ho Khang ,  Hyun-Jae Na ,  Sang-Ho Park ,  Se-Hwan Yu ,  Myoung-Geun Cha

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A switching element includes an active pattern including a channel portion, a source portion connected to the channel portion, and a drain portion connected to the channel portion, the source portion, a gate electrode overlapping the channel portion of the active pattern, a gate insulation layer disposed between the channel portion of the active pattern and the gate electrode, a source electrode disposed on the source portion of the active pattern to make ohmic contact with the source portion, and a drain electrode disposed on the drain portion of the active pattern to make ohmic contact with the drain portion. The drain portion and the channel portion of the active pattern include the same or substantially the same material.

Abstract translation: 开关元件包括有源图形，其包括沟道部分，连接到沟道部分的源极部分和连接到沟道部分的漏极部分，源极部分，与有源图案的沟道部分重叠的栅极电极，栅极绝缘层 设置在有源图案的沟道部分和栅电极之间的层，设置在有源图案的源极部分上以与源极部分欧姆接触的源电极以及设置在有源图案的漏极部分上的漏电极， 与漏极部分欧姆接触。 有源图案的漏极部分和沟道部分包括相同或基本上相同的材料。

公开(公告)号：US12104032B2

公开(公告)日：2024-10-01

申请号：US17533016

申请日：2021-11-22

Applicant: Samsung Display Co., LTD. ,  NIC LAB Co., LTD.

Inventor： Su-Hyoung Kang ,  Min Hyuck Kang ,  Yun Ho Kim ,  Jae Sung Kim ,  Jeong Eun Kim

IPC: C08J7/046 ,  C09D7/40 ,  C09D7/63 ,  C09D7/65 ,  C09D127/12 ,  C09D183/00 ,  G02B1/14 ,  B82Y40/00

CPC classification number: C08J7/046 ,  C09D7/63 ,  C09D7/65 ,  C09D7/67 ,  C09D127/12 ,  C09D183/00 ,  G02B1/14 ,  B82Y40/00

Abstract: A coating composition includes a compound of Chemical Formula 1:




wherein the groups are described herein.

公开(公告)号：US09929191B2

公开(公告)日：2018-03-27

申请号：US15006295

申请日：2016-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Ho Park ,  Su-Hyoung Kang ,  Dong-Hwan Shim ,  Yoon-Ho Khang ,  Se-Hwan Yu ,  Min-Jung Lee ,  Yong-Su Lee

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/28

CPC classification number: H01L27/127 ,  H01L21/28008 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

公开(公告)号：US09773823B2

公开(公告)日：2017-09-26

申请号：US14949510

申请日：2015-11-23

Applicant: Samsung Display Co., Ltd.

Inventor： Su-Hyoung Kang ,  Gwang Min Cha ,  Chang Oh Jeong

IPC: H01L27/12 ,  H01L21/768

CPC classification number: H01L27/1288 ,  H01L21/7688 ,  H01L27/1218 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1266 ,  H01L51/5253 ,  H01L51/5256 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338

Abstract: A display device and a method of manufacturing the display device are disclosed. In one aspect, the method includes forming a sacrificial layer over a carrier substrate, forming a passivation barrier layer to cover upper and lateral sides of the sacrificial layer and forming a thin film transistor layer over the passivation barrier layer. The method also includes placing a mask over the thin film transistor layer so as to expose an edge portion of the passivation barrier layer, wherein the edge portion does not overlap the mask in the depth dimension of the display device. The method further includes removing the edge portion of the passivation barrier layer so as to form a barrier layer and separating the carrier substrate from the barrier layer via the sacrificial layer.

公开(公告)号：US09356153B2

公开(公告)日：2016-05-31

申请号：US14452261

申请日：2014-08-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yoon-Ho Khang ,  Dong-Jo Kim ,  Su-Hyoung Kang ,  Yong-Su Lee

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/7869 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78696

Abstract: A thin film transistor includes a bottom gate electrode, a top gate electrode and an active pattern. The top gate electrode includes a transparent conductive material and overlaps with the bottom gate electrode. A boundary of the bottom gate electrode and a boundary of the top gate electrode are coincident with each other in a cross-sectional view. The active pattern includes a source portion, a drain portion and a channel portion disposed between the source portion and the drain portion. The channel portion overlaps with the bottom gate electrode and the top gate electrode.

Abstract translation: 薄膜晶体管包括底栅电极，顶栅电极和有源图案。 顶栅电极包括透明导电材料并与底栅电极重叠。 底栅电极的边界和顶栅电极的边界在横截面图中彼此重合。 有源图案包括源极部分，漏极部分和设置在源极部分和漏极部分之间的沟道部分。 沟道部分与底栅电极和顶栅电极重叠。