公开(公告)号：US20150214126A1

公开(公告)日：2015-07-30

申请号：US14296094

申请日：2014-06-04

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Kwang Soo KIM ,  Joon Seok Chae ,  Chang Seob Hong ,  Young Hoon Kwak ,  Young Ki Lee

IPC: H01L23/34 ,  H01L23/00

CPC classification number: H01L24/49 ,  H01L24/48 ,  H01L25/072 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48229 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: Disclosed herein is a power semiconductor module. The power semiconductor module includes: a printed circuit board (PCB); first and second heat spreaders mounted on the PCB and having one surface arranged with terminal slots; power devices mounted on the first heat spreader and connected to one another in parallel and electrically connected to the second heat spreader; and first and second terminals provided with protrusion inserted into the terminal slots and provided with connection terminals for connecting external terminals. Therefore, it is possible to improve heat radiating properties of the power semiconductor module and improve a reliability problem such as solder crack or delamination in connection with terminal connection.

Abstract translation: 这里公开了功率半导体模块。 功率半导体模块包括：印刷电路板（PCB）; 第一和第二散热器安装在PCB上并具有一个布置有端子槽的表面; 功率器件安装在第一散热器上并且彼此并联并电连接到第二散热器; 以及第一和第二端子，其设置有插入端子槽中的突起，并且设置有用于连接外部端子的连接端子。 因此，可以提高功率半导体模块的散热性能，并且可以提高与端子连接相关的诸如焊料裂纹或分层的可靠性问题。

公开(公告)号：US20140167123A1

公开(公告)日：2014-06-19

申请号：US14100949

申请日：2013-12-09

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Kwang Soo KIM ,  Bum Seok SUH ,  In Wha JEONG ,  Ji Hyun PARK ,  Jaehoon PARK

IPC: H01L29/417 ,  H01L21/28 ,  H01L29/78

CPC classification number: H01L29/78 ,  H01L29/0653 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/66568 ,  H01L29/7827

Abstract: There is provided a power semiconductor device including: a body region having a first conductivity; a well formed in an upper portion of the body region and having a second conductivity; and a conductive via formed in the body region while traversing the well.

Abstract translation: 提供了一种功率半导体器件，包括：具有第一导电性的主体区域; 在所述身体区域的上部中良好地形成并且具有第二导电性; 以及在穿过井时在体区中形成的导电通孔。

公开(公告)号：US20140160817A1

公开(公告)日：2014-06-12

申请号：US13781458

申请日：2013-02-28

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： In Wha JEONG ,  Bum Seok SUH ,  Kwang Soo KIM

IPC: G05F1/70

CPC classification number: G05F1/70 ,  H02M1/4225 ,  H02M3/158 ,  H02M2001/344 ,  Y02B70/126

Abstract: There are provided a power factor correction circuit, and a power supply including the same, the power factor correction circuit including a main switch adjusting a phase difference between a current and a voltage of input power, a main inductor storing or discharging the power according to switching of the main switch, a snubber circuit unit including a snubber switch forming a transfer path for surplus power present before the main switch is turned on and a snubber inductor adjusting an amount of a current applied to the snubber switch, and a reduction circuit unit including an auxiliary inductor inductively coupled to the snubber inductor and an auxiliary resistor consuming power induced from the snubber inductor through the auxiliary inductor.

Abstract translation: 提供功率因数校正电路和包括该功率因数校正电路的电源，所述功率因数校正电路包括调整输入电力的电流和电压之间的相位差的主开关，根据 主开关的切换，包括形成用于在主开关导通之前存在的剩余电力的传输路径的缓冲开关的缓冲电路单元和调节施加到缓冲开关的电流量的缓冲电感器，以及还原电路单元 包括电感耦合到缓冲电感器的辅助电感器和消耗由缓冲电感器通过辅助电感器引起的功率的辅助电阻器。

公开(公告)号：US20140119079A1

公开(公告)日：2014-05-01

申请号：US13740796

申请日：2013-01-14

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： In Wha JEONG ,  Bum Seok SUH ,  Kwang Soo KIM ,  Hyo Jin LEE

IPC: G05F1/70

CPC classification number: G05F1/70

Abstract: There are provided an interleaved power factor correction circuit and a power supply device including the same, the power factor correction circuit including: a main switching unit including a first main switch and a second main switch; an auxiliary switching unit including a first auxiliary switch and a second auxiliary switch; an inductor unit positioned between an input power terminal to which the input power is applied and the main switching unit and storing or discharging power according to the switching operations of the main switching unit; and an auxiliary inductor adjusting an amount of current flowing in the auxiliary switching unit when the auxiliary switching unit performs switching operations.

Abstract translation: 提供了一种交错式功率因数校正电路和包括该功率因数校正电路的电源装置，功率因数校正电路包括：主开关单元，包括第一主开关和第二主开关; 辅助切换单元，包括第一辅助开关和第二辅助开关; 位于施加输入电力的输入电力端子与主开关单元之间并且根据主开关单元的开关动作存储或放电的电感器单元; 以及辅助电感器，当辅助切换单元执行切换操作时，调节在辅助切换单元中流动的电流量。

公开(公告)号：US20140096380A1

公开(公告)日：2014-04-10

申请号：US14133157

申请日：2013-12-18

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Chang Hyun LIM ,  Jung Eun KANG ,  Heung Soo PARK ,  Seog Moon CHOI ,  Kwang Soo KIM ,  Joon Seok CHAE ,  Sung Keun PARK

IPC: H05K3/44 ,  H05K3/10

CPC classification number: H05K3/10 ,  H05K1/0203 ,  H05K1/053 ,  H05K3/108 ,  H05K3/44 ,  H05K3/445 ,  H05K2201/062 ,  H05K2201/09745 ,  H05K2201/10166 ,  H05K2203/0315 ,  Y10T29/4913

Abstract: Disclosed herein are a hybrid heat-radiating substrate including a metal core layer; an oxide insulating core layer that is formed in a thickness direction of the metal core layer to have a shape where the oxide insulating core layer is integrally formed with the metal core layer, an oxide insulating layer that is formed on one surface or both surfaces of the metal core layer, and a circuit layer that is configured to include first circuit patterns formed on the oxide insulating core layer and second circuit patterns formed on the oxide insulating layer, and a method of manufacturing the same.

Abstract translation: 本文公开了包括金属芯层的混合散热基板; 氧化物绝缘芯层，其形成在所述金属芯层的厚度方向上，以形成所述氧化物绝缘芯层与所述金属芯层一体形成的形状;氧化物绝缘层，其形成在所述金属芯层的一个表面或两个表面上 金属芯层，以及被配置为包括形成在氧化物绝缘芯层上的第一电路图案和形成在氧化物绝缘层上的第二电路图案的电路层及其制造方法。