公开(公告)号：US10298197B2

公开(公告)日：2019-05-21

申请号：US15487620

申请日：2017-04-14

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Moon Chul Lee ,  Jae Chang Lee ,  Chang Hyun Lim ,  Tae Hun Lee ,  Tae Kyung Lee ,  Tae Yoon Kim

IPC: H03H9/02 ,  H01L41/047 ,  H03H9/54 ,  H03H9/56 ,  H03H9/17

Abstract: A bulk acoustic wave resonator includes: a substrate; a cavity forming layer disposed on the substrate so as to form a cavity; a lower electrode disposed on the cavity; a piezoelectric layer disposed on the lower electrode; an upper electrode disposed on the piezoelectric layer; and a temperature compensation layer disposed below the lower electrode and in the cavity portion.

公开(公告)号：US20180234075A1

公开(公告)日：2018-08-16

申请号：US15809545

申请日：2017-11-10

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun Lee ,  Dae Hun Jeong ,  Chang Hyun Lim ,  Tae Yoon Kim ,  Moon Chul Lee

IPC: H03H9/02 ,  H01L41/047 ,  H03H9/17 ,  H03H9/13

CPC classification number: H03H9/02086 ,  H01L41/0472 ,  H01L41/0475 ,  H03H3/02 ,  H03H9/13 ,  H03H9/132 ,  H03H9/17 ,  H03H9/173 ,  H03H9/205 ,  H03H2003/021

Abstract: A bulk acoustic wave resonator includes: a substrate; a lower electrode connecting member disposed on the substrate; a resonating member including a lower electrode disposed on the lower electrode connecting member, a piezoelectric layer disposed on the lower electrode, and an upper electrode disposed on the piezoelectric layer; and an upper electrode connecting member electrically connecting the upper electrode and the substrate to each other. The upper electrode connecting member is extended from the substrate outside of the resonating member and is connected to a top surface of the upper electrode. The lower electrode connecting member electrically connects the lower electrode and the substrate to each other and includes a ring shape corresponding to a shape of the resonating member so as to support an edge of the resonating member.

公开(公告)号：US11437975B2

公开(公告)日：2022-09-06

申请号：US16939344

申请日：2020-07-27

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Chang Hyun Lim ,  Tae Hun Lee ,  Yong Suk Kim ,  Moon Chul Lee ,  Sang Kee Yoon

IPC: H03H9/13 ,  H03H9/05 ,  H03H9/02 ,  H03H9/56 ,  H03H9/17 ,  H03H9/10

Abstract: A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; and an insertion layer disposed below a partial region of the piezoelectric layer. A thickness of the first electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode overlap one another is less than a thickness of a region outside the active region. An angle of inclination of an internal side surface of the insertion layer is different from an angle of inclination of an external side surface of the insertion layer.

公开(公告)号：US11251767B2

公开(公告)日：2022-02-15

申请号：US16983209

申请日：2020-08-03

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Tae Yoon Kim ,  Dae Ho Kim ,  Chang Hyun Lim ,  Tae Hun Lee ,  Sang Kee Yoon ,  Jong Woon Kim ,  Won Han ,  Moon Chul Lee

IPC: H03H9/02 ,  H03H9/56 ,  H03H9/17 ,  H03H9/60 ,  H03H9/54 ,  H03H3/02 ,  H01L41/047

Abstract: A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 Å or less.

公开(公告)号：US10790797B2

公开(公告)日：2020-09-29

申请号：US15274359

申请日：2016-09-23

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won Han ,  Moon Chul Lee ,  Jae Chang Lee ,  Sang Uk Son ,  Tae Hun Lee

IPC: H03H9/17 ,  H03H9/13 ,  H01L41/047 ,  H01L41/053 ,  H03H9/54

Abstract: An acoustic resonator includes: a substrate; a resonance part mounted on the substrate and including resonance part electrodes, the resonance part being configured to generate acoustic waves; a cavity disposed between the resonance part and the substrate; a frame part disposed on at least one electrode among the resonance part electrodes, and being configured to reflect the acoustic waves; and a connection electrode configured to connect the at least one electrode to an external electrode, and having a thickness less than a thickness of the at least one electrode.

公开(公告)号：US10784837B2

公开(公告)日：2020-09-22

申请号：US15814869

申请日：2017-11-16

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun Lee ,  Chang Hyun Lim ,  Tae Yoon Kim ,  Moon Chul Lee

IPC: H03H9/12 ,  H03H9/125 ,  H03H9/17 ,  H03H9/13 ,  H03H9/205

Abstract: A bulk acoustic wave resonator includes a substrate including a first via and a second via, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, and an upper electrode connection member spaced apart from the lower electrode connection member. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. The lower electrode connection member electrically connects the lower electrode to the first via and supports a first edge portion of the resonant portion. The upper electrode connection member electrically connects the upper electrode to the second via and supports a second edge portion of the resonant portion. Either one or both of the upper electrode connection member and the lower electrode connection member includes a respective extension portion connected to a respective one of the first via and the second via that is disposed below the resonant portion.

公开(公告)号：US10720900B2

公开(公告)日：2020-07-21

申请号：US15391353

申请日：2016-12-27

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Hun Lee ,  Won Han ,  Moon Chul Lee ,  Sung Han

IPC: H03H9/02 ,  H03H9/17 ,  H03H3/007 ,  H03H9/54 ,  H03H3/02

Abstract: An acoustic resonator including a substrate, an active vibration region including, sequentially stacked on the substrate, a lower electrode, a piezoelectric layer, and an upper electrode, and a horizontal resonance suppressing part formed from and disposed in the piezoelectric layer, the horizontal resonance suppressing part having piezoelectric physical properties that are different from piezoelectric physical properties of the piezoelectric layer.

公开(公告)号：US10541665B2

公开(公告)日：2020-01-21

申请号：US15876791

申请日：2018-01-22

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Moon Chul Lee ,  Tah Joon Park ,  Jae Chang Lee ,  Tae Yoon Kim ,  Chang Hyun Lim ,  Hwa Sun Lee ,  Tae Hun Lee ,  Hyun Min Hwang ,  Tae Kyung Lee

IPC: H02H9/02 ,  H03H9/60 ,  H03H9/54 ,  H03H9/58 ,  H03H9/17 ,  H03H9/205 ,  H03H9/02

Abstract: A bulk acoustic wave (BAW) resonator includes: a substrate; a first BAW resonator including a first air cavity disposed in the substrate, and further including a first electrode, a first piezoelectric layer, and a second electrode stacked on the first air cavity; a second BAW resonator including a second air cavity disposed in the substrate, and further including a first electrode, a second piezoelectric layer, and a second electrode stacked on the second air cavity, wherein the second BAW resonator is connected in parallel to the first BAW resonator and has polarities that are opposite of polarities of the first BAW resonator; and a compensation capacitor circuit connected between the first BAW resonator and the second BAW resonator.

公开(公告)号：US10476463B2

公开(公告)日：2019-11-12

申请号：US15815966

申请日：2017-11-17

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun Lee ,  Chang Hyun Lim ,  Tae Yoon Kim ,  Moon Chul Lee

IPC: H03H3/007 ,  H03H3/04 ,  H03H7/42 ,  H03H9/00 ,  H03H3/02 ,  H03H9/05 ,  H03H9/17

Abstract: A bulk acoustic wave resonator includes a substrate, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, an upper electrode connection member, and a dielectric layer in which the lower electrode, the piezoelectric layer, and the upper electrode are embedded. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. An extension portion extends away from either the lower electrode or the upper electrode to protrude outwardly from the resonant portion. A capacitor portion is constituted by the extension portion, a portion of the upper electrode connection member disposed above the extension portion, and a portion of the dielectric layer disposed between the extension portion and the portion of the upper electrode connection member disposed above the extension portion.

公开(公告)号：US10267699B2

公开(公告)日：2019-04-23

申请号：US15045684

申请日：2016-02-17

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Chang Hyun Lim ,  Dae Hun Jeong ,  Tae Hun Lee

IPC: G01L9/00

Abstract: A pressure sensor element includes a die; a cavity and a trench formed in one surface of the die and defining therebetween a partition wall integral with and formed of the same material as the die; and a membrane formed on the die and covering the cavity and the trench.