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11.发明申请公开(公告)号：US20180350873A1
公开(公告)日：2018-12-06
申请号：US15659613
申请日：2017-07-25
Applicant: Samsung Electronics Co., LTD.
Inventor： Vladimir Nikitin , Dmytro Apalkov , Sebastian Schafer
CPC classification number: H01L27/222 , G11C11/1673 , G11C11/1675 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Magnetic junctions usable in a magnetic device and a method for providing the magnetic junctions are described. A patterned seed layer is provided. The patterned seed layer includes magnetic seed islands interspersed with an insulating matrix. At least a portion of the magnetoresistive stack is provided after the patterned seed layer. The magnetoresistive stack includes at least one magnetic segregating layer. The magnetic segregating layer(s) include at least one magnetic material and at least one insulator. The method anneals the at least the portion of the magnetoresistive stack such that the at least one magnetic segregating layer segregates. The constituents of the magnetic segregating layer segregate such that portions of magnetic material(s) align with the magnetic seed islands(s) and such that portions of the insulator(s) align with the insulating matrix.
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公开(公告)号：US10062732B2
公开(公告)日：2018-08-28
申请号：US15272413
申请日：2016-09-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dmytro Apalkov , Mohamad Krounbi , Vladimir Nikitin , Volodymyr Voznyuk
CPC classification number: H01L27/222 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: A magnetic memory device comprises a first reference magnetic layer, a first tunnel barrier layer, a second tunnel barrier layer, and a free magnetic layer disposed between the first tunnel barrier layer and the second tunnel barrier layer. A magnitude of an in-plane magnetostatic field from the first reference magnetic layer at an edge of the free magnetic layer is less than about 500 Oe. One embodiment comprises a second reference magnetic layer on the second tunnel barrier layer in which the first reference magnetic layer, the first tunnel barrier layer, the free magnetic layer, the second tunnel barrier layer and the second reference magnetic layer are arranged as a stack, and in which a width of the first tunnel barrier layer, the free magnetic layer, the second tunnel barrier and the second reference magnetic layer in a second direction is less than about 30 nm.
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公开(公告)号：US09825220B2
公开(公告)日：2017-11-21
申请号：US15080576
申请日：2016-03-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dmytro Apalkov , Xueti Tang , Dustin Erickson , Vladimir Nikitin , Roman Chepulskyy
CPC classification number: H01L43/12 , G11C11/161 , H01L43/08
Abstract: A magnetic tunnel junction device and a method to make the device are disclosed. The magnetic tunnel junction device comprises a first reference magnetic material layer, a tunnel barrier material layer, a free magnetic material layer between the first reference magnetic material layer and the tunnel barrier material layer, and a second reference magnetic material layer disposed on an opposite side of the tunnel barrier material layer from the free magnetic material layer, in which the second reference magnetic material layer is anti-magnetically exchanged coupled with the first reference magnetic material layer. A shift field Hshift experienced by the free magnetic material layer is substantially canceled by the anti-magnetic exchange coupling between the first reference magnetic material layer and the second reference magnetic material layer.
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公开(公告)号：US09735350B2
公开(公告)日：2017-08-15
申请号：US14981107
申请日：2015-12-28
Applicant: Samsung Electronics Co., LTD.
Inventor： Robert Beach , Roman Chepulskyy , Dustin William Erickson , Vladimir Nikitin
Abstract: A method provides a magnetic junction having a top and sides. A first magnetic layer, a nonmagnetic spacer layer and a second magnetic layer are deposited. The nonmagnetic spacer layer is between the first and second magnetic layers. A free layer is one of the magnetic layers. A reference layer is the other of the magnetic layers. The second magnetic layer includes an amorphous magnetic layer having nonmagnetic constituent(s) that are glass-forming. An anneal is performed in a gas having an affinity for the nonmagnetic constituent(s). The gas includes at least one of first and second gases. The first gas forms a gaseous compound with the nonmagnetic constituent(s) The second gas forms a solid compound with the nonmagnetic constituent(s). The second gas is usable if the anneal is performed after the magnetic junction has been defined. The solid compound is at least on the sides of the magnetic junction.
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15.发明申请公开(公告)号：US20160104544A1
公开(公告)日：2016-04-14
申请号：US14854251
申请日：2015-09-15
Applicant: Samsung Electronics Co., LTD.
Inventor： Sebastian Schafer , Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Robert Beach , Zheng Duan
CPC classification number: G11C11/161 , G01K7/36 , G01R33/098 , G01R33/14 , G11C7/04 , G11C11/16 , G11C11/1695 , G11C29/50 , G11C2029/5002
Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
Abstract translation: 使用自旋转移测量可以切换的磁结温度的方法。 磁结包括至少一个磁性层。 该方法包括测量磁层对于温度的至少一个磁特性的温度变化。 该方法还包括测量磁特性相对于磁结的电偏压的偏差变化。 进行这种测量，使得考虑到磁特性中的自旋转矩扭矩引起的变化。 基于温度变化和偏差变化确定磁结的温度与电偏差。
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Patent Agency Ranking
公开(公告)号：US10438638B2
公开(公告)日：2019-10-08
申请号：US15965563
申请日：2018-04-27
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Mohamad Towfik Krounbi , Gen Feng , Vladimir Nikitin
Abstract: A magnetic device and method for providing the device are described. The magnetic device includes magnetic junction(s) and spin-orbit interaction active layer(s) adjacent to the magnetic junction free layer(s). The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states. Providing the pinned and/or free layer(s) includes providing a magnetic layer including a glass-promoting component, providing a sacrificial oxide on the magnetic layer, providing a sacrificial layer on the sacrificial oxide and performing anneal(s) of the magnetic layer, the sacrificial oxide layer and the sacrificial layer at anneal temperature(s) greater than 300 degrees Celsius and not exceeding 475 degrees Celsius. The magnetic layer is amorphous as-deposited but is at least partially crystallized after the anneal(s). The sacrificial layer includes a sink for the glass-promoting component. The sacrificial layer and the sacrificial oxide are removed after the anneal(s).
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17.发明授权公开(公告)号：US10381550B1
公开(公告)日：2019-08-13
申请号：US15968471
申请日：2018-05-01
Applicant: Samsung Electronics Co., LTD.
Inventor： Zheng Duan , Dmytro Apalkov , Vladimir Nikitin
Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes first and second reference layers, a main barrier layer having a first thickness, a free layer, an engineered secondary barrier layer and a second reference layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The main barrier layer is between the first reference layer and the free layer. The secondary barrier layer is between the free layer and the second reference layer. The engineered secondary barrier layer has a resistance, a second thickness less than the first thickness and a plurality of regions having a reduced resistance less than the resistance. The free and reference layers each has a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy.
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公开(公告)号：US10297300B2
公开(公告)日：2019-05-21
申请号：US14854251
申请日：2015-09-15
Applicant: Samsung Electronics Co., LTD.
Inventor： Sebastian Schafer , Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Robert Beach , Zheng Duan
Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
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公开(公告)号：US20180294024A1
公开(公告)日：2018-10-11
申请号：US16005595
申请日：2018-06-11
Applicant: Samsung Electronics Co., LTD.
Inventor： Sebastian Schafer , Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Robert Beach , Zheng Duan
CPC classification number: G11C11/161 , G01K7/36 , G01R33/098 , G01R33/14 , G11C7/04 , G11C11/16 , G11C11/1695 , G11C29/50 , G11C2029/5002
Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
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20.发明申请公开(公告)号：US20180269384A1
公开(公告)日：2018-09-20
申请号：US15976844
申请日：2018-05-10
Applicant: Samsung Electronics Co., LTD.
Inventor： Shuxia Wang , Dmytro Apalkov , Vladimir Nikitin
CPC classification number: H01L27/226 , G11C11/161 , G11C11/165 , H01L43/08 , H01L43/12
Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a free layer, first and second reference layers, and first and second nonmagnetic spacer layers. The free layer is switchable between stable magnetic states. The first and second nonmagnetic spacer layers are between the free layer and first and second reference layers. The first and second reference layers have first and second reference layer magnetic lengths. The free layer has a free layer magnetic length less than the free layer physical length and less than the first and second reference layer magnetic lengths. The free layer magnetic length has a first end and a second end opposite to the first end. The free layer and the reference layers are oriented such that the first and second reference layer magnetic lengths extend past the first and second ends of the free layer.
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