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公开(公告)号：US11674079B2
公开(公告)日：2023-06-13
申请号：US17462428
申请日：2021-08-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jihyun Min , Eun Joo Jang , Yongwook Kim , Garam Park
IPC: C09K11/02 , C09K11/66 , C09K11/88 , C08K3/16 , C09K11/61 , H10K59/38 , H10K102/00 , B82Y20/00 , B82Y40/00 , H01L27/32
CPC classification number: C09K11/025 , C08K3/16 , C09K11/02 , C09K11/616 , C09K11/665 , C09K11/88 , C09K11/881 , C09K11/883 , B82Y20/00 , B82Y40/00 , C08K2201/001 , H01L27/322 , H01L2251/5369 , Y10S977/774 , Y10S977/896 , Y10S977/95
Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1:
ABX3+α Chemical Formula 1
wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.-
公开(公告)号：US11661547B2
公开(公告)日：2023-05-30
申请号：US16883989
申请日：2020-05-26
Inventor： Shin Ae Jun , Taekhoon Kim , Garam Park , Yong Seok Han , Eun Joo Jang , Hyo Sook Jang , Tae Won Jeong , Shang Hyeun Park
IPC: C09K11/62 , C09K11/70 , C09K11/08 , C09K11/88 , C09K11/56 , C09K11/02 , C08K3/32 , C08K3/30 , G02F1/1335 , G02F1/13357 , B82Y40/00 , B82Y20/00 , B82Y30/00
CPC classification number: C09K11/025 , C08K3/30 , C08K3/32 , C09K11/703 , C09K11/883 , G02F1/133516 , G02F1/133617 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C08K2201/001 , G02F2202/36 , Y10S977/774 , Y10S977/896 , Y10S977/95
Abstract: A quantum dot, including a core including a first semiconductor material that includes indium; and a shell including a second semiconductor material, and disposed on the core, wherein the first semiconductor material and the second semiconductor material are different, wherein the shell has at least two branch portions and a valley portion connecting the at least two branch portions, at least one of the at least two branch portions comprises Zn, Se, and S, and a content of sulfur in the at least one branch portion increases in a direction away from the core.
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公开(公告)号：US11512252B2
公开(公告)日：2022-11-29
申请号：US15251643
申请日：2016-08-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Garam Park , Eun Joo Jang , Yongwook Kim , Jihyun Min , Hyo Sook Jang , Shin Ae Jun , Taekhoon Kim , Yuho Won
Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
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公开(公告)号：US11193062B2
公开(公告)日：2021-12-07
申请号：US16825293
申请日：2020-03-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Garam Park , Tae Gon Kim , Nayoun Won , Shin Ae Jun , Soo Kyung Kwon , Seon-Yeong Kim , Shang Hyeun Park , Jooyeon Ahn , Yuho Won , Eun Joo Jang , Hyo Sook Jang
IPC: C09K11/88 , C09K11/62 , C09K11/70 , C09K11/56 , C09K11/02 , H01L27/32 , F21V8/00 , G02F1/1335 , G02F1/13357 , H05B33/14 , A61B6/06 , A61B6/00 , G01T7/00 , G21K1/02 , B82Y20/00 , B82Y40/00 , A61B6/02
Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
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公开(公告)号：US11124702B2
公开(公告)日：2021-09-21
申请号：US16798948
申请日：2020-02-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jihyun Min , Eun Joo Jang , Yongwook Kim , Garam Park
Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+α Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BR4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.
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Patent Agency Ranking
公开(公告)号：US12157848B2
公开(公告)日：2024-12-03
申请号：US18074570
申请日：2022-12-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyeyeon Yang , Garam Park , Shin Ae Jun , Tae Gon Kim , Taekhoon Kim
IPC: C09K11/70 , C09K11/02 , C09K11/08 , C09K11/54 , C09K11/56 , C09K11/62 , G02F1/017 , G02F1/13357 , H10K59/12 , H10K59/38 , B82Y20/00 , B82Y40/00
Abstract: A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.
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公开(公告)号：US12130508B2
公开(公告)日：2024-10-29
申请号：US18429592
申请日：2024-02-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Gon Kim , Garam Park , Jooyeon Ahn , Shang Hyeun Park , Shin Ae Jun
IPC: C09K11/62 , B82Y20/00 , C09K11/02 , C09K11/08 , C09K11/88 , G02F1/017 , H01L33/06 , H01L33/28 , H01L33/30 , H01L33/34 , H10K50/115
CPC classification number: G02F1/01716 , B82Y20/00 , C09K11/02 , C09K11/025 , C09K11/0811 , C09K11/0883 , C09K11/62 , C09K11/883 , H01L33/06 , H01L33/28 , H01L33/30 , H01L33/34 , H10K50/115 , G02F1/01791
Abstract: A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.
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公开(公告)号：US11927838B2
公开(公告)日：2024-03-12
申请号：US18220364
申请日：2023-07-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Gon Kim , Garam Park , Jooyeon Ahn , Shang Hyeun Park , Shin Ae Jun
IPC: C09K11/70 , B82Y20/00 , C09K11/02 , C09K11/08 , C09K11/62 , C09K11/88 , G02F1/017 , H01L33/06 , H01L33/28 , H01L33/30 , H01L33/34 , H10K50/115
CPC classification number: G02F1/01716 , B82Y20/00 , C09K11/02 , C09K11/025 , C09K11/0811 , C09K11/0883 , C09K11/62 , C09K11/883 , H01L33/06 , H01L33/28 , H01L33/30 , H01L33/34 , H10K50/115 , G02F1/01791
Abstract: A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.
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公开(公告)号：US11827828B2
公开(公告)日：2023-11-28
申请号：US18059075
申请日：2022-11-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Garam Park , Eun Joo Jang , Yongwook Kim , Jihyun Min , Hyo Sook Jang , Shin Ae Jun , Taekhoon Kim , Yuho Won
CPC classification number: C09K11/883 , C09K11/70 , B82Y20/00 , Y10S977/774 , Y10S977/95
Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
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20.发明授权公开(公告)号：US11760930B2
公开(公告)日：2023-09-19
申请号：US17583305
申请日：2022-01-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Garam Park , Tae Gon Kim , Jooyeon Ahn , Ji-Yeong Kim , Nayoun Won , Shin Ae Jun
IPC: C09K11/88 , C09K11/02 , G02F1/13357 , C09K11/08 , H10K50/115 , H10K59/12 , H10K59/38 , B82Y20/00 , B82Y40/00
CPC classification number: C09K11/883 , C09K11/02 , C09K11/0883 , G02F1/133617 , H10K50/115 , H10K59/12 , H10K59/38 , B82Y20/00 , B82Y40/00
Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.
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