公开(公告)号：US20220312064A1

公开(公告)日：2022-09-29

申请号：US17838623

申请日：2022-06-13

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Yeo-ri Yoon ,  Dae-hyun Kim ,  Han-soo Kim

IPC: H04N21/422 ,  G06F3/02

Abstract: A display apparatus is provided. The display apparatus includes a display configured to display a user interface window for receiving a letter input; a communication interface configured to receive a control instruction for inputting letters from a control device; and a controller configured to control the display to selectively display an on-screen keypad for inputting letters on the user interface window based on whether the control device includes letter keys for inputting letters.

公开(公告)号：US10986393B2

公开(公告)日：2021-04-20

申请号：US16432476

申请日：2019-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeo-ri Yoon ,  Dae-hyun Kim ,  Han-soo Kim

IPC: H04N5/44 ,  H04N21/422 ,  G06F3/02

Abstract: A display apparatus is provided. The display apparatus includes a display configured to display a user interface window for receiving a letter input; a communication interface configured to receive a control instruction for inputting letters from a control device; and a controller configured to control the display to selectively display an on-screen keypad for inputting letters on the user interface window based on whether the control device includes letter keys for inputting letters.

公开(公告)号：US09564221B2

公开(公告)日：2017-02-07

申请号：US15094184

申请日：2016-04-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hun Jeong ,  Han-soo Kim ,  Won-seok Cho ,  Jae-hoon Jang ,  Sun-il Shim

IPC: G11C16/04 ,  H01L27/115 ,  H01L29/66 ,  H01L29/788 ,  G11C16/10 ,  G11C16/26 ,  H01L23/522

CPC classification number: G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  H01L23/5226 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/7881

Abstract: A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.

Abstract translation: 具有垂直结构的非易失性存储器件包括具有垂直结构的NAND串。 NAND串包括多个存储单元，并且至少一对第一选择晶体管布置成与多个存储单元的第一端相邻。 多个字线耦合到NAND串的多个存储单元。 第一选择线通常连接到NAND串的至少一对第一选择晶体管。

公开(公告)号：US09336884B2

公开(公告)日：2016-05-10

申请号：US14302025

申请日：2014-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hun Jeong ,  Han-soo Kim ,  Won-seok Cho ,  Jae-hoon Jang ,  Sun-il Shim

IPC: G11C16/04 ,  H01L27/115 ,  H01L29/66 ,  H01L29/788

CPC classification number: G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  H01L23/5226 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/7881

Abstract: A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.

公开(公告)号：US11665387B2

公开(公告)日：2023-05-30

申请号：US17838623

申请日：2022-06-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeo-ri Yoon ,  Dae-hyun Kim ,  Han-soo Kim

IPC: H04N21/422 ,  G06F3/02

CPC classification number: H04N21/42204 ,  G06F3/0227 ,  H04N21/42214 ,  H04N21/42218

Abstract: A display apparatus is provided. The display apparatus includes a display configured to display a user interface window for receiving a letter input; a communication interface configured to receive a control instruction for inputting letters from a control device; and a controller configured to control the display to selectively display an on-screen keypad for inputting letters on the user interface window based on whether the control device includes letter keys for inputting letters.

公开(公告)号：US20190208258A1

公开(公告)日：2019-07-04

申请号：US16295598

申请日：2019-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-won Ok ,  Jae-oh Park ,  Han-soo Kim ,  Ji-eun Byun

IPC: H04N21/431 ,  G06F3/0484 ,  G06F3/16 ,  H04N21/438 ,  H04N21/422 ,  G06F3/0485

CPC classification number: H04N21/4312 ,  G06F3/04847 ,  G06F3/04855 ,  G06F3/167 ,  H04N21/42204 ,  H04N21/4383

Abstract: An image display device includes: a processor; a memory configured to store channel information corresponding to at least one channel; and at least one program which is stored in the memory and executed by the processor. The program may include instructions for controlling a display so as to move a channel indicator in a first or second direction on a channel scroll bar and to display channel information of a channel corresponding to a point at which the channel indicator is located, in response to a first input of pressing a channel-up or channel-down key for a long time, and for switching a current channel to the channel corresponding to the point at which the channel indicator is located and displaying an image corresponding to the switched channel, in response to a second input of releasing the channel-up or channel-down key.

公开(公告)号：US20150263021A1

公开(公告)日：2015-09-17

申请号：US14726065

申请日：2015-05-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-min Hwang ,  Han-soo Kim

IPC: H01L27/115

CPC classification number: H01L27/11529 ,  H01L27/11524 ,  H01L27/11548 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/7889 ,  H01L29/7926

Abstract: A vertical structure non-volatile memory device includes semiconductor regions that vertically extend on a substrate, a plurality of memory cell strings that vertically extend on the substrate along sidewalls of the semiconductor regions and include a plurality of memory cells and at least one or more first selection transistors, which are disposed on sides of the memory cells and are adjacent to one another. A plurality of wordlines is connected to the memory cells of the memory cell strings. A first selection line is connected to the selection transistors of the memory cell strings and insulating regions are formed as air gaps between the first selection transistors of the adjacent memory cell strings.

Abstract translation: 垂直结构的非易失性存储器件包括在衬底上垂直延伸的半导体区域，沿着半导体区域的侧壁在衬底上垂直延伸的多个存储单元串，并且包括多个存储单元和至少一个或多个第一 选择晶体管，它们设置在存储单元的侧面并彼此相邻。 多个字线连接到存储单元串的存储单元。 第一选择线连接到存储单元串的选择晶体管，绝缘区形成为相邻存储单元串的第一选择晶体管之间的气隙。