公开(公告)号：US20230032354A1

公开(公告)日：2023-02-02

申请号：US17847794

申请日：2022-06-23

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ran NAMGUNG ,  Minsoo KIM ,  Hyeon PARK ,  Daeseok SONG ,  Minki CHON ,  Jun Soo KIM ,  Hyun-Woo KIM ,  Hyun-Ji SONG ,  Young Joo CHOI ,  Suk-Koo HONG

IPC: G03F7/11 ,  C08F20/28 ,  C09D133/16 ,  H01L21/027

Abstract: A method for forming photoresist patterns and a semiconductor device on which a photoresist pattern manufactured according to the method is formed are disclosed. The method includes forming a preliminary photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer, the acrylic polymer including a structural unit containing a hydroxy group and a fluorine, and an acid compound on the preliminary photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an acetate-based compound on the substrate coated with the topcoat to remove the topcoat.

公开(公告)号：US20230028244A1

公开(公告)日：2023-01-26

申请号：US17749899

申请日：2022-05-20

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ran NAMGUNG ,  Daeseok SONG ,  Minsoo KIM ,  Hyeon PARK ,  Minki CHON ,  Jun Soo KIM ,  Hyun-Woo KIM ,  Hyun-Ji SONG ,  Young Joo CHOI ,  Suk-Koo HONG

IPC: G03F7/11 ,  C09D133/16 ,  G03F7/16

Abstract: A resist topcoat composition and a method of forming patterns using the resist topcoat composition are provided. The resist topcoat resist topcoat composition includes an acrylic polymer including a structural unit containing a hydroxy group and a fluorine; at least one acid compound selected from a sulfonic acid compound containing at least one fluorine, a sulfonimide compound containing at least one fluorine, and a carboxylic acid compound containing at least one fluorine; and a solvent.

公开(公告)号：US20230026721A1

公开(公告)日：2023-01-26

申请号：US17734772

申请日：2022-05-02

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ran NAMGUNG ,  Hyeon PARK ,  Minsoo KIM ,  Daeseok SONG ,  Minki CHON ,  Jun Soo KIM ,  Hyun-Woo KIM ,  Hyun-Ji SONG ,  Young Joo CHOI ,  Suk-Koo HONG

IPC: G03F7/11 ,  C08F220/28 ,  C09D133/16

Abstract: A resist topcoat composition and a method of forming patterns utilizing the resist topcoat composition are disclosed. The resist topcoat composition includes an acrylic polymer comprising a structural unit comprising a hydroxy group and a fluorine; a mixture comprising a first acid compound comprising at least one fluorine; and a second acid compound different from the first acid compound and comprising at least one fluorine, the first acid compound and the second acid compound are each independently selected from a sulfonic acid compound and a sulfonimide compound, the first acid compound and the second acid compound being in a weight ratio of about 1:0.1 to about 1:50; and a solvent.

公开(公告)号：US20230021469A1

公开(公告)日：2023-01-26

申请号：US17742260

申请日：2022-05-11

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ran NAMGUNG ,  Hyeon PARK ,  Shinhyo BAE ,  Daeseok SONG ,  Minki CHON ,  Jun Soo KIM ,  Hyun-Woo KIM ,  Hyun-Ji SONG ,  Young Joo CHOI ,  Suk-Koo HONG

IPC: C09D167/04 ,  C08G63/682 ,  C08G63/47 ,  C07D285/15 ,  C07C37/02 ,  C07C31/38 ,  C07C323/03 ,  G03F7/16 ,  G03F7/004

Abstract: A resist topcoat composition and a method of forming patterns using the resist topcoat composition. The resist topcoat composition includes an acrylic copolymer including a first structural unit represented by Chemical Formula M-1, and a second structural unit represented by Chemical Formula M-2; an acid compound; and a solvent

公开(公告)号：US20210050415A1

公开(公告)日：2021-02-18

申请号：US17070221

申请日：2020-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar BHUWALKA ,  Seong-Je KIM ,  Jong-Chol KIM ,  Hyun-Woo KIM

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  B82Y10/00 ,  H01L29/775 ,  H01L29/10 ,  H01L29/786 ,  H01L21/8234

Abstract: A semiconductor device includes a plurality of channels, source/drain layers, and a gate structure. The channels are sequentially stacked on a substrate and are spaced apart from each other in a first direction perpendicular to a top surface of the substrate. The source/drain layers are connected to the channels and are at opposite sides of the channels in a second direction parallel to the top surface of the substrate. The gate structure encloses the channels. The channels have different lengths in the second direction and different thicknesses in the first direction.

公开(公告)号：US20190148489A1

公开(公告)日：2019-05-16

申请号：US16248983

申请日：2019-01-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar BHUWALKA ,  Seong-Je KIM ,  Jong-Chol KIM ,  Hyun-Woo KIM

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/775 ,  H01L29/66 ,  H01L29/423 ,  B82Y10/00

Abstract: A semiconductor device includes a plurality of channels, source/drain layers, and a gate structure. The channels are sequentially stacked on a substrate and are spaced apart from each other in a first direction perpendicular to a top surface of the substrate. The source/drain layers are connected to the channels and are at opposite sides of the channels in a second direction parallel to the top surface of the substrate. The gate structure encloses the channels. The channels have different lengths in the second direction and different thicknesses in the first direction.

公开(公告)号：US20170184966A1

公开(公告)日：2017-06-29

申请号：US15461211

申请日：2017-03-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin PARK ,  Hyun-Woo KIM ,  Jin-Kyu HAN

IPC: G03F7/039 ,  G03F7/32 ,  G03F7/36 ,  H01L21/027 ,  G03F7/016 ,  G03F7/20 ,  H01L29/423 ,  G03F7/16 ,  G03F7/004

CPC classification number: G03F7/039 ,  G03F7/0045 ,  G03F7/016 ,  G03F7/0392 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/26 ,  G03F7/30 ,  G03F7/327 ,  G03F7/36 ,  H01L21/0274 ,  H01L29/4236

Abstract: A photoresist polymer comprising a first repeating unit including a halogen donor group and a second repeating unit including a protecting group connected by a sulfide bond.

公开(公告)号：US20170125257A1

公开(公告)日：2017-05-04

申请号：US15243128

申请日：2016-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cha-Won KOH ,  Cheol-Hong PARK ,  Hyun-Woo KIM ,  Jin-Kyu HAN

IPC: H01L21/308

CPC classification number: H01L21/3088 ,  B81C1/00952 ,  G03F7/40 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/3085 ,  H01L21/3086

Abstract: Example embodiments relate to a method of forming a photoresist pattern and a method of fabricating a semiconductor device using the same. The method of fabricating a semiconductor device comprises forming a mask layer on a substrate, forming a photoresist pattern on the mask layer, the photoresist pattern having pattern portions at a first height and recess portions, applying a first liquid onto the photoresist pattern, filling the recess portions with a pattern filler at a second height, the pattern filler having an higher etch rate than the etch rate of the pattern portions to the same etchant, removing the first liquid, etching the pattern filler after removing the first liquid, etching the mask layer via the photoresist pattern to form a mask pattern, and etching the substrate via the mask pattern to form a fine pattern.

公开(公告)号：US20160358778A1

公开(公告)日：2016-12-08

申请号：US15047659

申请日：2016-02-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheol-Hong PARK ,  Sang-Yoon WOO ,  Cha-Won KOH ,  Hyun-Woo KIM ,  Sang-Min PARK

IPC: H01L21/033 ,  H01L27/108 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/20 ,  G03F7/091 ,  G03F7/11 ,  G03F7/32 ,  H01L21/0276 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76802 ,  H01L27/10876

Abstract: In a method of forming a pattern, a lower coating layer and a photoresist layer are sequentially formed on an object layer. An exposure process may be performed such that the photoresist layer is divided into an exposed portion and a non-exposed portion. A portion of the lower coating layer overlapping or contacting the exposed portion is at least partially transformed into a polarity conversion portion that has a polarity substantially identical to that of the exposed portion. The non-exposed portion of the photoresist layer is selectively removed.

Abstract translation: 在形成图案的方法中，在目标层上依次形成下涂层和光致抗蚀剂层。 可以进行曝光处理，使得光致抗蚀剂层被分成暴露部分和非曝光部分。 与暴露部分重叠或接触的下部涂层的一部分至少部分地转变成具有与暴露部分的极性基本相同的极性的极性转换部分。 选择性地去除光致抗蚀剂层的未曝光部分。