公开(公告)号：US20230209804A1

公开(公告)日：2023-06-29

申请号：US17935148

申请日：2022-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheoljin Cho ,  Yukyung Shin ,  Changhwa Jung ,  Hyunjun Kim ,  Hanjin Lim

IPC: H01L27/108

CPC classification number: H01L27/10814 ,  H01L27/10823

Abstract: A capacitor is described. The capacitor includes a lower electrode, a dielectric layer structure disposed on the lower electrode, and an upper electrode disposed on the dielectric layer structure. The dielectric layer structure includes a first dielectric layer, a second dielectric layer contacting the first dielectric layer, and a third dielectric layer contacting the second dielectric layer. Each of the first to third dielectric layers includes a material with a crystalline structure. The second dielectric layer includes an oxide having ferroelectric or antiferroelectric properties, and the second dielectric layer includes a material in which at least two different crystal phases are mixed.

公开(公告)号：US20220254873A1

公开(公告)日：2022-08-11

申请号：US17731032

申请日：2022-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongyul Park ,  Jaewan Chang ,  Suhwan Kim ,  Hyunjun Kim

IPC: H01L49/02 ,  H01L27/108

Abstract: A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.

公开(公告)号：US11348995B2

公开(公告)日：2022-05-31

申请号：US17030152

申请日：2020-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongyul Park ,  Jaewan Chang ,  Suhwan Kim ,  Hyunjun Kim

IPC: H01L21/02 ,  H01L21/469 ,  H01L49/02 ,  H01L27/108

Abstract: A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.

公开(公告)号：US20240209495A1

公开(公告)日：2024-06-27

申请号：US18425048

申请日：2024-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suhwan Kim ,  Hyunjun Kim ,  Younglim Park ,  Dongkwan Baek ,  Hyungsuk Jung

IPC: C23C16/02 ,  C23C16/44 ,  C23C16/448 ,  C23C16/52

CPC classification number: C23C16/0245 ,  C23C16/4412 ,  C23C16/4482 ,  C23C16/52

Abstract: A deposition system, includes: a reaction chamber; a first gas supply unit supplying a first precursor in a liquid state stored in a first main tank to the reaction chamber in a gaseous state; a reactant supply unit supplying a reactant to the reaction chamber; and an exhaust unit discharging an exhaust material, wherein the first gas supply unit includes a first sub tank, a first liquid mass flow controller, and a first vaporizer, the first precursor is supplied to the reaction chamber by passing through the first sub tank, the first liquid mass flow controller, and the first vaporizer, a first automatic refill system operates to periodically fill the first sub tank with the liquid first precursor stored in the first main tank, and the exhaust unit comprises a processing chamber, a pump, and a scrubber to which a plasma pretreatment system is applied.

公开(公告)号：US20230395132A1

公开(公告)日：2023-12-07

申请号：US18180623

申请日：2023-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： JONGSUN PARK ,  Kyeongho Lee ,  Hyunjun Kim

IPC: G11C11/4093 ,  G11C11/408 ,  G11C11/4094 ,  G06F7/501

CPC classification number: G11C11/4093 ,  G11C11/4085 ,  G11C11/4094 ,  G06F7/501

Abstract: An SRAM cell includes a first pass gate transistor connected with a first word-line and a local bit-line, a first inverter that includes an output terminal connected with the first pass gate transistor and an input terminal, a second inverter that includes an input terminal connected with the first pass gate transistor and an output terminal, a second pass gate transistor connected with a second word line, the input terminal of the first inverter and the output terminal of the second inverter, and a complementary local bit-line, a first transistor connected with the second pass gate transistor, a local computing line, and a ground electrode, and a second transistor connected with a third word-line, the local computing line, and the ground electrode.

公开(公告)号：US20210202691A1

公开(公告)日：2021-07-01

申请号：US17030152

申请日：2020-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongyul Park ,  Jaewan Chang ,  Suhwan Kim ,  Hyunjun Kim

IPC: H01L49/02 ,  H01L27/108

Abstract: A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.