公开(公告)号：US09349802B2

公开(公告)日：2016-05-24

申请号：US14265965

申请日：2014-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong Heo ,  Seong-jun Park ,  Hyeon-jin Shin ,  Jae-ho Lee

IPC: H01L27/108 ,  H01L21/336 ,  H01L29/16 ,  H01L29/66 ,  H01L45/00 ,  G11C13/00 ,  G11C13/02

CPC classification number: H01L29/1606 ,  G11C13/0014 ,  G11C13/025 ,  G11C2213/35 ,  H01L27/10808 ,  H01L27/10873 ,  H01L29/66015 ,  H01L29/7606 ,  H01L45/149

Abstract: Disclosed are memory devices including a two-dimensional (2D) material, methods of manufacturing the same, and methods of operating the same. A memory device may include a transistor, which includes graphene and 2D semiconductor contacting the graphene, and a capacitor connected to the transistor. The memory device may include a first electrode, a first insulation layer, a second electrode, a semiconductor layer, a third electrode, a second insulation layer, and a fourth electrode which are sequentially arranged. The second electrode may include the graphene, and the semiconductor layer may include the 2D semiconductor. Alternatively, the memory device may include first and second electrode elements, a graphene layer between the first and second electrode elements, a 2D semiconductor layer between the graphene layer and the first electrode element, and a dielectric layer between the graphene layer and the second electrode.

Abstract translation: 公开了包括二维（2D）材料，其制造方法及其操作方法的存储器件。 存储器件可以包括晶体管，其包括与石墨烯接触的石墨烯和2D半导体以及连接到晶体管的电容器。 存储器件可以包括依次布置的第一电极，第一绝缘层，第二电极，半导体层，第三电极，第二绝缘层和第四电极。 第二电极可以包括石墨烯，并且半导体层可以包括2D半导体。 或者，存储器件可以包括第一和第二电极元件，在第一和第二电极元件之间的石墨烯层，在石墨烯层和第一电极元件之间的2D半导体层，以及在石墨烯层和第二电极之间的电介质层 。

公开(公告)号：US09166062B2

公开(公告)日：2015-10-20

申请号：US14693680

申请日：2015-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho Lee ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Hyung-cheol Shin ,  Jae-hong Lee ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L21/36 ,  H01L29/786 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/78696 ,  B82Y10/00 ,  H01L29/1095 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/78684 ,  Y10S977/734 ,  Y10S977/842 ,  Y10S977/938

Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.

公开(公告)号：US10595825B2

公开(公告)日：2020-03-24

申请号：US14582415

申请日：2014-12-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-ho Lee ,  Soon-jae Hong ,  Gi-hun Yun

IPC: A61B8/00 ,  G06F3/0488 ,  G06T7/62 ,  G06F3/041 ,  G01S7/52 ,  A61B8/08

Abstract: An ultrasound measurement method includes: providing a first object and a second object within an ultrasound image displayed on a touch screen; activating the first object and the second object, to be movable to perform a measurement on the ultrasound image; receiving a touch-and-drag input with respect to at least one of the first and second objects; and displacing a corresponding one of the first and second objects on the ultrasound image in correspondence with the received touch-and-drag input.

公开(公告)号：US09595361B2

公开(公告)日：2017-03-14

申请号：US14337741

申请日：2014-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon-jin Shin ,  Seong-jun Park ,  Jae-ho Lee ,  Seong-Jun Jeong

IPC: H01L21/30 ,  H01L21/46 ,  H01B1/08 ,  C23C14/08 ,  C23C14/02 ,  C23C16/02 ,  C23C16/40

CPC classification number: H01B1/08 ,  C23C14/025 ,  C23C14/08 ,  C23C16/0281 ,  C23C16/40 ,  Y10T428/265

Abstract: A thin film structure includes a metal seed layer, and a method of forming an oxide thin film on a conductive substrate by using the metal seed layer is disclosed. The thin film structure includes a transparent conductive substrate, a metal seed layer that is deposited on the transparent conductive substrate, and a metal oxide layer that is deposited on the metal seed layer.

Abstract translation: 公开了一种薄膜结构，包括金属种子层，以及通过使用金属种子层在导电性基板上形成氧化物薄膜的方法。 薄膜结构包括透明导电基板，沉积在透明导电基板上的金属籽晶层和沉积在金属籽晶层上的金属氧化物层。

公开(公告)号：US09525076B2

公开(公告)日：2016-12-20

申请号：US13960256

申请日：2013-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho Lee ,  Hyun-jong Chung ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Jin-seong Heo

IPC: H01L29/792 ,  B82Y10/00 ,  H01L21/28 ,  H01L29/47 ,  H01L29/788 ,  H01L29/16 ,  G11C11/40 ,  H01L29/778 ,  G11C16/04 ,  H01L51/05

CPC classification number: H01L29/792 ,  B82Y10/00 ,  G11C11/40 ,  G11C16/0466 ,  H01L21/28273 ,  H01L29/1606 ,  H01L29/47 ,  H01L29/7781 ,  H01L29/788 ,  H01L51/0512 ,  Y10S977/734 ,  Y10S977/938

Abstract: A graphene memory includes a source and a drain spaced apart from each other on a conductive semiconductor substrate, a graphene layer contacting the conductive semiconductor substrate and spaced apart from and between the source and the drain, and a gate electrode on the graphene layer. A Schottky barrier is formed between the conductive semiconductor substrate and the graphene layer such that the graphene layer is used as a charge-trap layer for storing charges.

Abstract translation: 石墨烯存储器包括在导电半导体衬底上彼此间隔开的源极和漏极，与导电半导体衬底接触并与源极和漏极间隔开并且在源极和漏极之间以及在石墨烯层上的栅电极的石墨烯层。 在导电半导体衬底和石墨烯层之间形成肖特基势垒，使得石墨烯层用作用于存储电荷的电荷捕获层。

公开(公告)号：US09312368B2

公开(公告)日：2016-04-12

申请号：US14334028

申请日：2014-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho Lee ,  Kyung-eun Byun ,  Hyun-jae Song ,  Hyeon-jin Shin ,  Min-Hyun Lee ,  In-kyeong Yoo ,  Seong-jun Park

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/16 ,  H01L29/165 ,  H01L29/267

CPC classification number: H01L29/66977 ,  H01L21/76224 ,  H01L21/764 ,  H01L29/0649 ,  H01L29/1606 ,  H01L29/165 ,  H01L29/267 ,  H01L29/42364 ,  H01L29/66045 ,  H01L29/778 ,  H01L29/78

Abstract: A graphene device including separated junction contacts and a method of manufacturing the same are disclosed. The graphene device is a field effect transistor (FET) in which graphene is used as a channel. A source electrode and a drain electrode do not directly contact the graphene channel, and junction contacts formed by doping semiconductor are separately disposed between the graphene channel and the source electrode and between the graphene channel and the drain electrode. Therefore, in an off state where a voltage is not applied to a gate electrode, due to a barrier between the graphene channel and the junction contacts, carriers may not move. As a result, the graphene device may have low current in the off state.

Abstract translation: 公开了一种包括分离的接点的石墨烯器件及其制造方法。 石墨烯装置是其中使用石墨烯作为通道的场效应晶体管（FET）。 源电极和漏电极不直接接触石墨烯通道，并且由掺杂半导体形成的结接点分别设置在石墨烯通道和源电极之间以及石墨烯通道和漏电极之间。 因此，在由于石墨烯通道和接合点之间的阻挡而不向栅电极施加电压的关闭状态下，载体可能不移动。 结果，石墨烯器件在断开状态下可能具有低电流。