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11.
公开(公告)号:US11507460B2
公开(公告)日:2022-11-22
申请号:US17448995
申请日:2021-09-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jeongho Lee , Youngsik Kim , Seungyou Baek , Eunchu Oh , Youngkwang Yoo , Younggeun Lee
Abstract: A memory controller for controlling a memory operation of a memory device includes: an error correction code (ECC) circuit configured to detect an error of first read data read from the memory device and correct the error; an error type detection logic configured to write first write data to the memory device, compare second read data with the first write data, detect an error bit of the second read data based on a result of the comparing, and output information about an error type identified by the error bit; and a data patterning logic configured to change a bit pattern of input data to reduce an error of the second read data based on the information about the error type.
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公开(公告)号:US11256563B2
公开(公告)日:2022-02-22
申请号:US16882601
申请日:2020-05-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jeongho Lee , Youngjin Cho , Seungwon Lee
Abstract: A memory controller including: a fault determination circuit to receive first parity, second parity, and data read out from a first row of a memory device, and determine, based on a result of a first error detection operation using the first parity and a result of a second error detection operation using the second parity, whether the first row is faulty; a parity storage circuit to store a repair parity for repairing a fault of a row of a plurality of rows of the memory device, wherein the plurality of rows constitutes a repair unit, and wherein the repair unit includes the first row and one or more second rows; and a recovery circuit to repair a fault of the first row by using data of at least one of the second rows and the repair parity, when the first row is determined to be a faulty row.
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公开(公告)号:US11163638B2
公开(公告)日:2021-11-02
申请号:US16695395
申请日:2019-11-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jeongho Lee , Youngsik Kim , Seungyou Baek , Youngkwang Yoo , Younggeun Lee , Yena Lee
Abstract: An operating method of a memory device, which includes a first memory region and a second memory region, includes reading first data from the first memory region and storing the read first data in a data buffer block, performing a first XOR operation on the first data provided from the data buffer block and second data read from the second memory region to generate first result data, writing the first data stored in the data buffer block in the second memory region, performing a second XOR operation on the first data and the first result data to generate the second data, storing the generated second data in the data buffer block, and writing the second data stored in the data buffer block in the first memory region.
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公开(公告)号:US12007884B2
公开(公告)日:2024-06-11
申请号:US17895260
申请日:2022-08-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jaeho Shin , Jeongho Lee , Younggeon Yoo , Hyeokjun Choe
CPC classification number: G06F12/02 , G06F12/14 , H04L9/0825
Abstract: In a method of allocating and protecting a memory in a computational storage device including a first computing engine and a buffer memory, a memory allocation request is received from a host device that is disposed outside the computational storage device. Based on the memory allocation request, a memory allocation operation in which a first memory region is generated in the buffer memory and a first key associated with the first memory region is generated is performed. A program execution request is received from the host device. Based on the program execution request, a program execution operation is performed in which a first program is executed by the first computing engine by accessing the first memory region based on an encryption or a decryption using the first key.
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公开(公告)号:US11983115B2
公开(公告)日:2024-05-14
申请号:US18166244
申请日:2023-02-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jeongho Lee , Heehyun Nam , Jaeho Shin , Hyodeok Shin , Younggeon Yoo , Younho Jeon , Wonseb Jeong , Ipoom Jeong , Hyeokjun Choe
IPC: G06F12/0817 , G06F3/06 , G06F12/0862
CPC classification number: G06F12/0828 , G06F3/0622 , G06F3/0655 , G06F3/0679 , G06F12/0862 , G06F2212/602 , G06F2212/621
Abstract: A device connected to a host processor via a bus includes: an accelerator circuit configured to operate based on a message received from the host processor; and a controller configured to control an access to a memory connected to the device, wherein the controller is further configured to, in response to a read request received from the accelerator circuit, provide a first message requesting resolution of coherence to the host processor and prefetch first data from the memory.
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公开(公告)号:US11942434B2
公开(公告)日:2024-03-26
申请号:US17731841
申请日:2022-04-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sangkyu Lee , Jingu Kim , Kyungdon Mun , Shanghoon Seo , Jeongho Lee
IPC: H01L23/538 , H01L21/48 , H01L21/56 , H01L21/683 , H01L23/00 , H01L23/31 , H01L25/00 , H01L25/10
CPC classification number: H01L23/5389 , H01L21/4853 , H01L21/4857 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/5383 , H01L23/5386 , H01L23/562 , H01L24/19 , H01L24/20 , H01L25/105 , H01L25/50 , H01L2221/68372 , H01L2224/214 , H01L2225/1035 , H01L2225/1052 , H01L2225/1058 , H01L2924/3511
Abstract: A semiconductor package is disclosed. The semiconductor package includes a back-side wiring substrate and a front-side redistribution layer which are in parallel, and a connector, a semiconductor chip and an encapsulator which are between the back-side wiring substrate and the front-side redistribution layer. The encapsulator surrounds surfaces of the connector and the semiconductor chip. The back-side wiring substrate includes a core layer, a back-side via plug extending through the core layer, and a back-side redistribution layer on the back-side via plug.
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公开(公告)号:US11853215B2
公开(公告)日:2023-12-26
申请号:US17408767
申请日:2021-08-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Wonseb Jeong , Heehyun Nam , Jeongho Lee
IPC: G06F12/08 , G06F12/0806 , G06F12/02 , G06F12/0862
CPC classification number: G06F12/0806 , G06F12/0253 , G06F12/0862 , G06F2212/1036
Abstract: A device includes: a first interface circuit configured to communicate with a host processor; a second interface circuit configured to communicate with a memory comprising a plurality of storage regions; a cache memory including a plurality of cache lines configured to temporarily store data; and a controller configured to receive an integrated command from the host processor, the integrated command comprising memory operation information and cache management information, configured to control the memory based on a first command that is instructed according to the memory operation information, and configured to control at least one of the plurality of cache lines based on the cache management information.
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公开(公告)号:US11742046B2
公开(公告)日:2023-08-29
申请号:US17318234
申请日:2021-05-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jeongho Lee , Kwangjin Lee , Hee Hyun Nam , Jaeho Shin , Youngkwang Yoo
CPC classification number: G11C29/42 , G11C7/1012 , G11C7/1063 , G11C29/18 , G11C29/44
Abstract: Disclosed is a method of performing, at a controller, an access to a memory device, which includes transmitting, at the controller, a first command signal, a first address signal, and a first swizzling signal to the memory device, selecting first data bits stored in a memory cell array of the memory device based on the first command signal and the first address signal, and sequentially outputting, at the memory device, at least a part of the first data bits to the controller in a burst manner, based on the first swizzling signal.
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公开(公告)号:US11720442B2
公开(公告)日:2023-08-08
申请号:US17510898
申请日:2021-10-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyeokjun Choe , Heehyun Nam , Jeongho Lee , Younho Jeon
CPC classification number: G06F11/1068 , G06F3/0619 , G06F3/0656 , G06F3/0659 , G06F3/0679 , G06F11/0772
Abstract: A memory controller is provided that is configured to control a memory accessed by a device connected to a host processor via a bus. The memory controller is configured to control a memory accessed by a device connected to a host processor via a bus, and includes a first interface circuit configured to communicate with the host processor; a second interface circuit configured to communicate with the memory; an error detection circuit configured to detect an error present in data received from the second interface circuit in response to a first read request received from the first interface circuit; a variable error correction circuit configured to correct the error based on at least one of a reference latency and a reference error correction level included in a first error correction option; and a fixed error correction circuit configured to correct the error in parallel with an operation of the variable error correction circuit.
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公开(公告)号:US11094640B2
公开(公告)日:2021-08-17
申请号:US16590960
申请日:2019-10-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sangkyu Lee , Shanghoon Seo , Jeongho Lee
IPC: H01L23/538 , H01L23/31 , H01L23/495 , H01L23/498 , H01L21/56 , H01L23/00 , H01L25/065 , H01L23/522 , H01L23/50
Abstract: A package module includes a core structure including a frame having a penetrating portion, an electronic component disposed in the penetrating portion, and an insulating material covering at least a portion of each of the frame and the electronic component and filling at least a portion of the penetrating portion. The core structure further has a recessed portion in which a stopper layer is disposed on a bottom surface of the recessed portion. A semiconductor chip has a connection pad and is disposed in the recessed portion such that an inactive surface faces the stopper layer. An encapsulant covers at least a portion of each of the core structure and the semiconductor chip, and fills at least a portion of the recessed portion. An interconnect structure is disposed on the core structure and an active surface of the semiconductor chip, and includes a redistribution layer.
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