公开(公告)号：US20210011373A1

公开(公告)日：2021-01-14

申请号：US16807734

申请日：2020-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongjin Lee ,  Minseok Kang ,  Seungyoon Lee ,  Chan Hwang

IPC: G03F1/70 ,  G06F17/18 ,  H01L21/66 ,  G03F7/20

Abstract: An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.

公开(公告)号：US09747682B2

公开(公告)日：2017-08-29

申请号：US14940880

申请日：2015-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongjin Lee ,  Chan Hwang ,  Seungyoon Lee

IPC: G06T7/00 ,  G03F7/20 ,  H04N5/225 ,  H04N5/33 ,  G06T7/174

CPC classification number: G06T7/001 ,  G03F7/70633 ,  G06T7/174 ,  G06T2207/10048 ,  G06T2207/10152 ,  G06T2207/30148 ,  G06T2207/30204 ,  H04N5/2256 ,  H04N5/332

Abstract: A method for measuring overlay includes receiving a first image of a first overlay mark captured using light having a first wavelength. The method includes receiving a second image of a second overlay mark captured using light having a second wavelength different from the first wavelength. The method includes measuring a displacement between a central portion of the first image and a central portion of the second image, wherein the first and second overlay marks are disposed on different levels.

公开(公告)号：US20250012736A1

公开(公告)日：2025-01-09

申请号：US18662244

申请日：2024-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dohun Kim ,  Mincheol Kwak ,  Junseong Yoon ,  Jeongjin Lee ,  Seungyoon Lee ,  Chan Hwang

IPC: G01N21/956 ,  G01N21/95 ,  G06T7/00

Abstract: A method of optimizing an overlay measurement condition includes measuring, for each overlay measurement condition of multiple overlay measurement conditions, an overlay at multiple positions on a substrate; calculating, for each of the multiple overlay measurement conditions, key parameter indexes (KPIs) based on the measured overlay; converting, for each of the multiple overlay measurement conditions, the KPIs into key parameter function (KPF) values based on a KPF, where each of the KPFs has a same dimensional representation; integrating, for each of the multiple overlay measurement conditions, the KPF values to generate an integrated KPF value; and selecting an optimized overlay measurement condition from among the multiple overlay measurement conditions based on the integrated KPF values associated with each of the multiple overlay measurement conditions.

公开(公告)号：US20240118627A1

公开(公告)日：2024-04-11

申请号：US18203163

申请日：2023-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongjin Lee ,  Inbeom Yim

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/033 ,  H01L21/66

CPC classification number: G03F7/70633 ,  G03F7/70033 ,  H01L21/0274 ,  H01L21/0337 ,  H01L22/12

Abstract: A method of correcting overlay includes forming first patterns in a plurality of first shot areas by radiating extreme ultraviolet light reflected from a first mask to a first layer; forming second patterns in each of a plurality of second shot areas by radiating extreme ultraviolet light reflected from a second mask to a second layer; matching a pair of second shot areas to each of the first shot areas; and generating first and second correction parameters for correcting an overlay error of the second patterns, wherein the first correction parameter is configured to correct an overlay error of each of the second shot areas based on the first shot area matched to each of the second shot areas, and the second correction parameter is configured to correct an overlay error between the pair of second shot areas matched to each of the first shot areas.

公开(公告)号：US11921421B2

公开(公告)日：2024-03-05

申请号：US18062231

申请日：2022-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongjin Lee ,  Minseok Kang ,  Seungyoon Lee ,  Chan Hwang

IPC: G03F1/70 ,  G03F7/20 ,  G06F17/18 ,  H01L21/66

CPC classification number: G03F1/70 ,  G03F7/2004 ,  G06F17/18 ,  H01L22/12

Abstract: An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.

公开(公告)号：US11537042B2

公开(公告)日：2022-12-27

申请号：US16807734

申请日：2020-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongjin Lee ,  Minseok Kang ,  Seungyoon Lee ,  Chan Hwang

IPC: G03F1/70 ,  G03F7/20 ,  H01L21/66 ,  G06F17/18

Abstract: An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.

公开(公告)号：US11137673B1

公开(公告)日：2021-10-05

申请号：US16952844

申请日：2020-11-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doogyu Lee ,  Seungyoon Lee ,  Jeongjin Lee ,  Chan Hwang

IPC: G03F1/24 ,  G03F7/20 ,  H01L21/027

Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus for improving an overlay error in a EUV exposure process, and an overlay correction method and a semiconductor device fabricating method using the exposure apparatus. The EUV exposure apparatus includes an EUV light source; a first optical system configured to emit EUV light from the EUV light source to an EUV mask; a second optical system configured to emit EUV light reflected from the EUV mask to a wafer; a mask stage; a wafer stage; and a control unit configured to control the mask stage and the wafer stage, wherein, based on a correlation between a first overlay parameter, which is one of parameters of overlay errors between layers on the wafer, and a second overlay parameter, which is another parameter, the first overlay parameter is corrected through correction of the second overlay parameter.

公开(公告)号：US20240219845A1

公开(公告)日：2024-07-04

申请号：US18460679

申请日：2023-09-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNGHAK PARK ,  Jinsun Kim ,  Jeongjin Lee

IPC: G03F7/00 ,  H01L21/66

CPC classification number: G03F7/70633 ,  H01L22/12

Abstract: An overlay measurement method includes providing a device structure including a substrate, a lower stack on the substrate and an upper stack on the lower stack, measuring a first overlay including critical dimension (CD) information of the device structure, measuring a second overlay including tilt information of the device structure, and calculating a compensation overlay by combining the first overlay and the second overlay, wherein the device structure has a first structure penetrating a portion of at least one of the lower stack or the upper stack in a vertical direction perpendicular to an upper surface of the substrate, and a second structure penetrating a portion of the lower stack and a portion of the upper stack in the vertical direction.

公开(公告)号：US11796923B2

公开(公告)日：2023-10-24

申请号：US17392788

申请日：2021-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjay Kang ,  Chorong Park ,  Doogyu Lee ,  Seungyoon Lee ,  Jeongjin Lee

IPC: G03F7/20 ,  G03F7/00 ,  G03F1/70

CPC classification number: G03F7/70633 ,  G03F7/2004 ,  G03F1/70

Abstract: Disclosed are an overlay correction method, a method of evaluating an overlay correction operation, and a method of fabricating a semiconductor device using the overlay correction method. The overlay correction method may include measuring an overlay between center lines of lower and upper patterns on a wafer, fitting each of components of the overlay with a polynomial function to obtain first fitting quantities, and summing the first fitting quantities to construct a correction model. The components of the overlay may include overlay components, which are respectively measured in two different directions parallel to a top surface of a reticle. The highest order of the polynomial function may be determined as an order, which minimizes a difference between the polynomial function and each of the components of the overlay or corresponds to an inflection point in a graph of the difference with respect to the highest order of the polynomial function.

公开(公告)号：US11422455B2

公开(公告)日：2022-08-23

申请号：US17464826

申请日：2021-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doogyu Lee ,  Seungyoon Lee ,  Jeongjin Lee ,  Chan Hwang

IPC: G03F1/24 ,  H01L21/027 ,  G03F7/20

Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus for improving an overlay error in a EUV exposure process, and an overlay correction method and a semiconductor device fabricating method using the exposure apparatus. The EUV exposure apparatus includes an EUV light source; a first optical system configured to emit EUV light from the EUV light source to an EUV mask; a second optical system configured to emit EUV light reflected from the EUV mask to a wafer; a mask stage; a wafer stage; and a control unit configured to control the mask stage and the wafer stage, wherein, based on a correlation between a first overlay parameter, which is one of parameters of overlay errors between layers on the wafer, and a second overlay parameter, which is another parameter, the first overlay parameter is corrected through correction of the second overlay parameter.