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11.发明申请公开(公告)号：US20190288229A1
公开(公告)日：2019-09-19
申请号：US16351654
申请日：2019-03-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Woo KIM , Chan Su KIM , Tae Ho KIM , Kun Su PARK , Eun Joo JANG , Jin A KIM , Tae Hyung KIM , Jeong Hee LEE
Abstract: An electroluminescent device, a method of manufacturing the same, and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode, the emission layer including light emitting particles; an electron transport layer disposed between the first electrode and the emission layer; and a hole transport layer disposed between the second electrode and the emission layer, wherein the electron transport layer includes inorganic oxide particles and a metal-organic compound, the metal-organic compound or a thermal decomposition product of the metal-organic compound being soluble a non-polar solvent.
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12.发明申请公开(公告)号：US20190280233A1
公开(公告)日：2019-09-12
申请号：US16298357
申请日：2019-03-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Hyung KIM , Sung Woo KIM , Jin A KIM , Yuho WON , Jeong Hee LEE , Eun Joo JANG , Oul CHO
Abstract: A quantum dot including a core including a first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including zinc, tellurium, selenium, and sulfur, a production method thereof, and an electronic device including the same. The quantum dot is free of cadmium, the quantum dot has a mole ratio of tellurium with respect to selenium of less than or equal to about 0.06:1, a photoluminescence peak wavelength of the quantum dot is greater than or equal to about 450 nm and less than or equal to about 470 nanometers (nm), and a full width at half maximum (FWHM) of a photoluminescence peak of the quantum dot is less than or equal to about 41 nm.
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公开(公告)号：US20240357799A1
公开(公告)日：2024-10-24
申请号：US18508833
申请日：2023-11-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Choong Hyun LEE , Joon Cheol KIM , Kang-Uk KIM , Jin A KIM , Byoung Wook JANG , Young-Seung CHO
CPC classification number: H10B12/482 , G11C5/063 , H10B12/315 , H10B12/485 , H10B12/488 , H10B12/50
Abstract: There is provided a semiconductor memory device capable of improving performance and reliability of an element. The semiconductor memory device includes a substrate including a cell region and a peripheral region, a cell region isolation layer in the substrate, isolating the cell region from the peripheral region, an isolation active region surrounded by the cell region isolation layer, a bit line structure on the cell region, including a cell conductive line and a cell gate electrode in the substrate of the cell region, crossing the cell conductive line.
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公开(公告)号：US20240254388A1
公开(公告)日：2024-08-01
申请号：US18630264
申请日：2024-04-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho WON , Sung Woo KIM , Jin A KIM , Jeong Hee LEE , Tae Hyung KIM , Eun Joo JANG
IPC: C09K11/88 , B82Y20/00 , B82Y40/00 , C09K11/02 , H05B33/14 , H10K50/115 , H10K50/15 , H10K50/16 , H10K50/17
CPC classification number: C09K11/883 , C09K11/02 , H05B33/14 , H10K50/115 , H10K50/15 , H10K50/16 , H10K50/17 , H10K50/171 , B82Y20/00 , B82Y40/00
Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.
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公开(公告)号：US20230212456A1
公开(公告)日：2023-07-06
申请号：US18113650
申请日：2023-02-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho WON , Sung Woo KIM , Jin A KIM , Jeong Hee LEE , Tae Hyung KIM , Eun Joo JANG
CPC classification number: C09K11/883 , C09K11/02 , H05B33/14 , H10K50/15 , H10K50/16 , H10K50/17 , H10K50/115 , H10K50/171 , B82Y20/00
Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.
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Patent Agency Ranking
公开(公告)号：US20230071604A1
公开(公告)日：2023-03-09
申请号：US18054687
申请日：2022-11-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Woo KIM , Jin A KIM , Tae Hyung KIM , Kun Su PARK , Yuho WON , Jeong Hee LEE , Eun Joo JANG , Eun Joo JANG , Hyo Sook JANG , Yong Seok HAN , Heejae CHUNG
Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.
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公开(公告)号：US20210207027A1
公开(公告)日：2021-07-08
申请号：US17187926
申请日：2021-03-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho WON , Sung Woo KIM , Jin A KIM , Jeong Hee LEE , Tae Hyung KIM , Eun Joo JANG
Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.
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公开(公告)号：US20200332189A1
公开(公告)日：2020-10-22
申请号：US16851495
申请日：2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeong Hee LEE , Hyo Sook JANG , Sung Woo KIM , Jin A KIM , Tae Hyung KIM , Yuho WON , Eun Joo JANG , Yong Seok HAN
Abstract: A semiconductor nanocrystal particle including a core including a first semiconductor nanocrystal including zinc (Zn) and sulfur (S), selenium (Se), tellurium (Te), or a combination thereof; and a shell including a second semiconductor nanocrystal disposed on at least a portion of the core, wherein the core includes a dopant of a Group 1A element, a Group 2A element, or a combination thereof, and the semiconductor nanocrystal particle exhibits a maximum peak emission in a wavelength region of about 440 nanometers (nm) to about 470 nm.
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公开(公告)号：US20200063032A1
公开(公告)日：2020-02-27
申请号：US16549430
申请日：2019-08-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin A KIM , Yuho WON , Sung Woo KIM , Tae Hyung KIM , Jeong Hee LEE , Eun Joo JANG
Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.
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20.发明公开公开(公告)号：US20240247188A1
公开(公告)日：2024-07-25
申请号：US18415796
申请日：2024-01-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yong Seok HAN , Ji Hyun MIN , Yuho WON , Jin A KIM , Hogeun CHANG , Hyundong HA
IPC: C09K11/88 , B82Y20/00 , B82Y40/00 , H10K50/115
CPC classification number: C09K11/883 , H10K50/115 , B82Y20/00 , B82Y40/00
Abstract: A semiconductor nanoparticle, a production method, and an electroluminescent devices including the same, wherein the semiconductor nanoparticles include a zinc chalcogenide including zinc, selenium, and sulfur, the semiconductor nanoparticles do not include cadmium, the semiconductor nanoparticles exhibit a peak emission wavelength in a range of greater than or equal to about 455 nanometers (nm) and less than or equal to about 480 nm, in a photoluminescence spectroscopy analysis, the semiconductor nanoparticles exhibit an absolute quantum yield of greater than or equal to about 80% and a full width at half maximum of less than or equal to about 50 nm, and an average particle size of the semiconductor nanoparticles is greater than or equal to about 12 nm and less than or equal to about 50 nm.
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