公开(公告)号：US20240357799A1

公开(公告)日：2024-10-24

申请号：US18508833

申请日：2023-11-14

申请人： Samsung Electronics Co., Ltd.

发明人： Choong Hyun LEE ,  Joon Cheol KIM ,  Kang-Uk KIM ,  Jin A KIM ,  Byoung Wook JANG ,  Young-Seung CHO

IPC分类号： H10B12/00 ,  G11C5/06

CPC分类号： H10B12/482 ,  G11C5/063 ,  H10B12/315 ,  H10B12/485 ,  H10B12/488 ,  H10B12/50

摘要： There is provided a semiconductor memory device capable of improving performance and reliability of an element. The semiconductor memory device includes a substrate including a cell region and a peripheral region, a cell region isolation layer in the substrate, isolating the cell region from the peripheral region, an isolation active region surrounded by the cell region isolation layer, a bit line structure on the cell region, including a cell conductive line and a cell gate electrode in the substrate of the cell region, crossing the cell conductive line.

公开(公告)号：US20240222123A1

公开(公告)日：2024-07-04

申请号：US18356322

申请日：2023-07-21

申请人： Samsung Electronics Co., Ltd.

发明人： Kang In KIM ,  Si Nyeon KIM ,  Jiho PARK ,  Youngwoo SON ,  Ji-Eun LEE ,  Young-Seung CHO

IPC分类号： H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L29/423 ,  H01L29/66

CPC分类号： H01L21/0337 ,  H01L21/0332 ,  H01L21/3086 ,  H01L21/31144 ,  H01L29/4236 ,  H01L29/6653 ,  H01L29/6656

摘要： A method of fabricating a semiconductor device may include forming an active pattern on a substrate, sequentially forming on the substrate a base mask, a first mask layer, a first capping layer, a second mask layer, a second capping layer, a third mask layer, a third capping layer, a fourth mask layer, and a fourth capping layer, forming first spacers, forming second spacers, forming third spacers, and using the third spacers as a mask to pattern the first mask layer and the first capping layer. Forming the third spacers may include forming a spacer layer to completely fill a space between the sidewalls of patterns of the patterned second mask layer.