公开(公告)号：US20180294297A1

公开(公告)日：2018-10-11

申请号：US15862013

申请日：2018-01-04

Applicant: Samsung Electronics Co. Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/369

CPC classification number: H01L27/14605 ,  H01L27/14627 ,  H01L27/14641 ,  H04N5/369 ,  H04N5/37457

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US20230369357A1

公开(公告)日：2023-11-16

申请号：US18355427

申请日：2023-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub SHIM ,  Kyung Ho LEE ,  Sung Ho CHOI ,  Jung Hoon PARK ,  Jung Wook LIM ,  Min Ji JUNG

IPC: H01L27/146 ,  H04N25/70 ,  H04N25/778

CPC classification number: H01L27/14605 ,  H01L27/14627 ,  H01L27/14641 ,  H04N25/70 ,  H04N25/778

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US11348959B2

公开(公告)日：2022-05-31

申请号：US16775519

申请日：2020-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Kyungho Lee ,  Sung-Ho Choi

IPC: H01L27/146

Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.

公开(公告)号：US11011559B2

公开(公告)日：2021-05-18

申请号：US16712020

申请日：2019-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/378 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/357

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US10950639B2

公开(公告)日：2021-03-16

申请号：US16712039

申请日：2019-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/378 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/357

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US10573676B2

公开(公告)日：2020-02-25

申请号：US15862013

申请日：2018-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H04N5/374 ,  H01L27/146 ,  H04N5/378 ,  H04N5/369 ,  H04N5/3745

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US20190148447A1

公开(公告)日：2019-05-16

申请号：US16248202

申请日：2019-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyuk Soon Choi ,  Jung Bin Yun ,  Jungchak Ahn

IPC: H01L27/146

Abstract: An image sensor includes a substrate including unit pixels. Each of the unit pixels includes photoelectric conversion elements and storage diodes.

公开(公告)号：US12114086B2

公开(公告)日：2024-10-08

申请号：US17454395

申请日：2021-11-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Bin Yun ,  Kyungho Lee

IPC: H04N5/232 ,  H04N25/44 ,  H04N25/704 ,  H04N25/766 ,  H04N25/778

CPC classification number: H04N25/704 ,  H04N25/44 ,  H04N25/766 ,  H04N25/778

Abstract: An electronic device includes an image sensor that generates image data, and an image processor that processes the image data. The image sensor includes a pixel array including pixels repeatedly disposed along a row direction and a column direction. Each of pixels belonging to a first row of rows of the pixel array includes sub-pixels each connected to one of a first transmission metal line, a second transmission metal line, and a third transmission metal line. In response to signals respectively applied to the first to third transmission metal lines, at least a part of charges integrated at the sub-pixels of the pixels belonging to the first row from among the pixels is diffused to corresponding floating diffusion areas.

公开(公告)号：US11817465B2

公开(公告)日：2023-11-14

申请号：US18155785

申请日：2023-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N25/70 ,  H04N25/778

CPC classification number: H01L27/14605 ,  H01L27/14627 ,  H01L27/14641 ,  H04N25/70 ,  H04N25/778

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US20210375965A1

公开(公告)日：2021-12-02

申请号：US17399282

申请日：2021-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/3745

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.