Clothing management apparatus and method for controlling thereof

    公开(公告)号:US11447905B2

    公开(公告)日:2022-09-20

    申请号:US16719227

    申请日:2019-12-18

    Abstract: A clothing management apparatus may include a display and a processor to, based on a state of a garment in an image of the garment, determine a management necessity of the garment, based on the management necessity, determine a management completeness that is expected when the garment is managed according to a management mode among a plurality of management modes, based on the management completeness, generate an expected image of the garment when the garment is managed according to the management mode, and control the display to display the expected image to a user.

    P15 PROTEIN VARIANT AND USE THEREOF FOR PREVENTING OR TREATING CANCER
    15.
    发明申请
    P15 PROTEIN VARIANT AND USE THEREOF FOR PREVENTING OR TREATING CANCER 有权
    P15蛋白变异及其用于预防或治疗癌症的方法

    公开(公告)号:US20150218243A1

    公开(公告)日:2015-08-06

    申请号:US14615224

    申请日:2015-02-05

    CPC classification number: C07K14/4738 A61K38/00 C07K14/4703

    Abstract: A p15 protein variant; a polynucleotide encoding the p15 protein variant; a method for preparing the p15 protein variant; a pharmaceutical composition comprising the p15 protein variant; and a method for preventing and/or treating cancer comprising administering the p15 protein variant to a subject.

    Abstract translation: p15蛋白质变体; 编码p15蛋白变体的多核苷酸; 制备p15蛋白变体的方法; 包含该p15蛋白质变体的药物组合物; 以及用于预防和/或治疗癌症的方法,其包括将p15蛋白质变体施用于受试者。

    Magnetic memory device and method of fabricating the same

    公开(公告)号:US12262641B2

    公开(公告)日:2025-03-25

    申请号:US17466246

    申请日:2021-09-03

    Abstract: A method of fabricating a magnetic memory device comprises forming, on a substrate, a data storage structure including a bottom electrode, a magnetic tunnel junction pattern, and a top electrode, forming a first capping dielectric layer conformally covering lateral and top surfaces of the data storage structure, and forming a second capping dielectric layer on the first capping dielectric layer. The forming the first capping dielectric layer is performed by PECVD in which a first source gas, a first reaction gas, and a first purging gas are supplied. The forming the second capping dielectric layer Is performed by PECVD in which a second source gas, a second reaction gas, and a second purging gas are supplied. The first and second reaction gases are different from each other. The first and second purging gases are different from each other.

    Semiconductor devices
    17.
    发明授权

    公开(公告)号:US11785767B2

    公开(公告)日:2023-10-10

    申请号:US17159727

    申请日:2021-01-27

    CPC classification number: H10B41/27 H10B41/10 H10B43/10 H10B43/27

    Abstract: A semiconductor device includes a substrate having a first region and a second region, insulating patterns in the substrate in the second region that define active patterns of the substrate, gate electrodes spaced apart from each other and stacked on an upper surface of the substrate and extending in a first direction, first separation regions extending in the first direction and in contact with the active patterns, second separation regions extending between the first separation regions in the first direction, and channel structures penetrating through the gate electrodes in the first region. At least one of the second separation regions is in contact with the substrate below the insulating patterns.

    Method of manufacturing a magnetoresistive random access memory device

    公开(公告)号:US11329219B2

    公开(公告)日:2022-05-10

    申请号:US16840741

    申请日:2020-04-06

    Abstract: In a method of manufacturing a magnetoresistive random access memory, a memory structure may be formed on a substrate. The memory structure may include a lower electrode, a magnetic tunnel junction (MTJ) structure, and an upper electrode sequentially stacked. A protection layer including silicon nitride may be formed to cover a surface of the memory structure. The protection layer may be formed by a chemical vapor deposition process using plasma and introducing deposition gases including a silicon source gas, a nitrogen source gas containing no hydrogen and a dissociation gas. Damages of the MTJ structure may be decreased during forming the protection layer. Thus, the MRAM may have improved characteristics.

    Electronic device and method for controlling wireless charging

    公开(公告)号:US11251655B2

    公开(公告)日:2022-02-15

    申请号:US16698741

    申请日:2019-11-27

    Abstract: An electronic device includes a wireless charging coil, a wireless charging circuit, a power management module, a battery, and a processor. The processor is configured to control to receive first information from an external electronic device while transmitting wireless charging power to the external electronic device through the wireless charging circuit, to control, in response to receiving the first information, the wireless charging circuit to stop transmission of the wireless charging power and operate in a state of transmitting and receiving a ping signal, to check whether a predetermined time has elapsed since the transmission of the wireless charging power is stopped, and to control, in response to elapse of the predetermined time, the wireless charging circuit to retransmit the wireless charging power to the external electronic device. Other embodiments are possible.

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