公开(公告)号：US10566502B2

公开(公告)日：2020-02-18

申请号：US15171087

申请日：2016-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook Hwang ,  Si Han Kim ,  Wan Tae Lim ,  Eun Joo Shin

IPC: H01L33/46 ,  H01L33/32 ,  H01L33/58 ,  H01L33/42 ,  H01L33/50 ,  H01L33/56 ,  H01L33/06 ,  H01L33/22

Abstract: A semiconductor light-emitting device includes a light-emitting stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a wavelength conversion layer disposed on the light-emitting stack and configured to convert at least some of light having a first wavelength, emitted from the active layer, into light having a second wavelength, and a light control layer disposed between the light-emitting stack and the wavelength conversion layer, and including a first insulating layer and a second insulating layer, the first insulating layer having a refractive index lower than a refractive index of the light-emitting stack, and the second insulating layer having a refractive index higher than a refractive index of the first insulating layer by 0.5 or more.

公开(公告)号：US10281088B2

公开(公告)日：2019-05-07

申请号：US15656094

申请日：2017-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Wook Chung ,  Kyung Wook Hwang

IPC: F21K9/232 ,  H01L33/50 ,  H01L33/60 ,  H01L33/06 ,  H01L33/32 ,  H01L33/56 ,  H01L33/64 ,  H01L25/075 ,  H01L33/62 ,  F21K9/27 ,  F21Y115/10 ,  F21V3/02 ,  F21K9/23 ,  F21Y107/00

Abstract: An LED device includes a transparent substrate having a bar-like shape and having a first surface and a second surface opposed thereto, a plurality of LED chips mounted on the first surface of the transparent substrate and electrically connected to each other, each of the plurality of LED chips having a reflective layer disposed on a surface mounted in the transparent substrate, a first connection terminal and a second connection terminal disposed on opposing ends of the transparent substrate and electrically connected to the plurality of LED chips, a bonding layer interposed between the plurality of LED chips and the transparent substrate and including a metal filler, and a wavelength conversion portion covering the first surface and the second surface of the transparent substrate and the plurality of LED chips.

公开(公告)号：US09543470B2

公开(公告)日：2017-01-10

申请号：US14452309

申请日：2014-08-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook Hwang ,  Jae Hyeok Heo ,  Joong Kon Son

IPC: H01L33/10 ,  H01L33/24

CPC classification number: H01L33/10 ,  H01L33/24 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor light emitting device includes a substrate, a reflective layer and a light emitting structure. The reflective layer includes at least two porous layers alternately disposed on the substrate and having different porosities. The light emitting structure is disposed on the reflective layer and includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer.

Abstract translation: 半导体发光器件包括衬底，反射层和发光结构。 反射层包括交替地设置在基底上并具有不同孔隙率的至少两个多孔层。 发光结构设置在反射层上，并且包括第一导电型半导体层，有源层和第二导电型半导体层。

公开(公告)号：US09515224B2

公开(公告)日：2016-12-06

申请号：US14662149

申请日：2015-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook Hwang ,  Joong Kon Son

IPC: H01L33/00 ,  H01L33/24 ,  H01L33/10 ,  H01L33/12 ,  H01L33/46

CPC classification number: H01L33/10 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/12 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46

Abstract: A semiconductor light-emitting device includes a substrate, a first reflective layer disposed on the substrate and including first openings, a first conductivity-type semiconductor layer grown in and extending from the first openings and connected on the first reflective layer, a second reflective layer disposed on the first conductivity-type semiconductor layer and including second openings having lower surfaces disposed to be spaced apart from upper surfaces of the first openings, and a plurality of light-emitting nanostructures including nanocores extending from the second openings and formed of a first conductivity-type semiconductor material, and active layers and second conductivity-type semiconductor layers sequentially disposed on the nanocores.

Abstract translation: 一种半导体发光器件，包括衬底，设置在衬底上并包括第一开口的第一反射层，在第一开口上生长并延伸并连接在第一反射层上的第一导电型半导体层，第二反射层 设置在第一导电型半导体层上，并且包括具有设置成与第一开口的上表面间隔开的下表面的第二开口，以及多个发光纳米结构，包括从第二开口延伸并由第一导电性形成的纳米孔 型半导体材料，以及顺序地设置在纳米孔上的有源层和第二导电型半导体层。

公开(公告)号：US09172008B2

公开(公告)日：2015-10-27

申请号：US14158729

申请日：2014-01-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook Hwang ,  Jung Sub Kim

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/12 ,  H01L33/10 ,  H01L33/26 ,  H01L33/32 ,  H01L33/08 ,  H01L33/24

CPC classification number: H01L33/50 ,  H01L33/08 ,  H01L33/10 ,  H01L33/12 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L33/507 ,  H01L2224/14 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes a light-transmissive substrate, a light-transmissive buffer layer disposed on the light-transmissive substrate, and a light emitting structure. The light-transmissive buffer layer includes a first layer and a second layer having different refractive indices and disposed alternately at least once. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the buffer layer.

Abstract translation: 半导体发光器件包括透光衬底，设置在透光衬底上的透光缓冲层和发光结构。 透光缓冲层包括具有不同折射率的第一层和第二层，交替设置至少一次。 发光结构包括依次设置在缓冲层上的第一导电型半导体层，有源层和第二导电型半导体层。