公开(公告)号：US20220159788A1

公开(公告)日：2022-05-19

申请号：US17348753

申请日：2021-06-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehong Kim ,  Younghoo Kim ,  Sunghyun Park ,  Kuntack Lee

IPC: H05B1/02 ,  H01L21/687 ,  H01L21/67

Abstract: A substrate heating apparatus includes: a plurality of heating lamps disposed on a chuck stage; a window disposed on the chuck stage and including a window base and a central lens, wherein the chuck stage and the window are each configured to support a substrate above the heating lamps; and a mirror disposed between the heating lamps and the chuck stage, the mirror including a mirror base, a central reflector, and an edge reflector, wherein the plurality of heating lamps are configured to heat the substrate by emitting light through the window onto the substrate and emitting light onto the mirror, wherein the mirror is configured to reflect the light through the window onto the substrate, including reflecting portions of the light via the central and edge reflectors, and wherein the central lens is configured to focus the light onto the central portion of the substrate.

公开(公告)号：US20220075268A1

公开(公告)日：2022-03-10

申请号：US17466101

申请日：2021-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon Jeong ,  Seohyun Kim ,  Sukhoon Kim ,  Younghoo Kim ,  Sangjine Park ,  Kuntack Lee

IPC: G03F7/16 ,  G03F7/20

Abstract: A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.

公开(公告)号：US12293901B2

公开(公告)日：2025-05-06

申请号：US17685097

申请日：2022-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woorim Lee ,  Sunggil Kang ,  Inseong Kim ,  Gonjun Kim ,  Younghoo Kim

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/683

Abstract: A manufacturing method includes depositing a chamber protective layer in a chamber, supplying a first purge gas to the chamber, transferring a substrate to the chamber, the substrate being disposed inside an edge ring on an electrostatic chuck, processing the substrate, supplying a second purge gas to the chamber, transferring the substrate to an outside of the chamber, removing the chamber protective layer, and supplying a third purge gas to the chamber. Variation of the surface roughness of the edge ring may be minimal. A ratio of an edge gas flow rate of gas supplied to an edge of the substrate and the edge ring to a central gas flow rate of gas supplied to a central portion of the substrate in the processing the substrate may be 0.05 to 19. The flow rate ratio may be more than 1 in the supplying the second purge gas.

公开(公告)号：US12287147B2

公开(公告)日：2025-04-29

申请号：US17493346

申请日：2021-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine Park ,  Youngtae Kim ,  Jihoon Jeong ,  Younghoo Kim

IPC: F26B5/00 ,  F26B3/02 ,  G03F7/40 ,  H01L21/67

Abstract: A fluid supply device configured to supply a processing fluid to a wafer processing device that includes a chamber is provided. The fluid supply device includes a reservoir configured to change the processing fluid into a supercritical fluid state; a wafer protecting device comprising a body configured to prevent a wafer in the chamber of the wafer processing device from being damaged by the processing fluid in the supercritical fluid state by receiving the processing fluid in the supercritical fluid state and limiting a speed of the processing fluid; and a fluid supply line configured to provide a path for the processing fluid between the reservoir and the wafer protecting device and a path for the processing fluid between the wafer protecting device and the wafer processing device.

公开(公告)号：US11935772B2

公开(公告)日：2024-03-19

申请号：US17381507

申请日：2021-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seohyun Kim ,  Younghoo Kim ,  Sangjine Park ,  Kuntack Lee ,  Jihoon Jeong

IPC: H01L21/677

CPC classification number: H01L21/67703 ,  H01L21/67739

Abstract: An apparatus for processing a substrate may include a wet chamber, a dry chamber, a first transfer robot and a shared shutter. The wet chamber may be configured to process the substrate using a chemical. The dry chamber may be adjacent the wet chamber and configured to dry the substrate processed by the wet chamber. The first transfer robot may be configured to transfer the substrate between the wet chamber and the dry chamber. The shared shutter may be between the wet chamber and the dry chamber. A connection opening through which the substrate may be transferred may be formed between the wet chamber and the dry chamber. The shared shutter may be configured to open and close the connection opening.

公开(公告)号：US20240087856A1

公开(公告)日：2024-03-14

申请号：US18447479

申请日：2023-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiwon Son ,  Sunggil Kang ,  Kangmin Do ,  Youngsun Kim ,  Younghoo Kim ,  Sangjin An

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/32715 ,  C23C16/45565 ,  H01J37/32082 ,  H01J37/32477 ,  H01J37/32633 ,  H01J2237/3321 ,  H01J2237/334

Abstract: A substrate treating apparatus includes a process chamber configured to perform plasma treatment, a substrate support in a lower portion of the process chamber and configured to support a substrate, a showerhead in an upper portion of the process chamber and configured to supply a process gas for the plasma treatment toward the substrate, and a baffle surrounding the substrate support. The substrate support functions as a first electrode for generating plasma, the showerhead and the baffle function as a second electrode for generating the plasma, the baffle has a variable height, and an area of the second electrode varies as a height of the baffle varies.

公开(公告)号：US11798801B2

公开(公告)日：2023-10-24

申请号：US18048924

申请日：2022-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hunjae Jang ,  Seungmin Shin ,  Kuntack Lee ,  Seungho Kim ,  Younghoo Kim ,  Taehong Kim ,  Sunghyun Park

IPC: H01L21/02 ,  B08B3/08 ,  B08B7/00 ,  B08B3/10

CPC classification number: H01L21/02057 ,  B08B3/08 ,  B08B3/10 ,  B08B7/0035

Abstract: A wafer-cleaning apparatus includes an inner pin that supports a wafer. The wafer-cleaning apparatus further includes a nozzle disposed above the inner pin, a light source disposed under the inner pin, a window disposed between the light source and the wafer, and a window protector disposed between the wafer and the window. The nozzle supplies a chemical liquid to the wafer and the inner pin distributes a portion of the chemical liquid on an upper surface of the wafer by rotating the wafer. The window protector receives a portion of the chemical liquid that flows out of the wafer and the light source supplies the light to the wafer through the window protector and the window.

公开(公告)号：US11640115B2

公开(公告)日：2023-05-02

申请号：US17466101

申请日：2021-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon Jeong ,  Seohyun Kim ,  Sukhoon Kim ,  Younghoo Kim ,  Sangjine Park ,  Kuntack Lee

IPC: G03F7/20 ,  G03F7/16

Abstract: A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.