公开(公告)号：US12287147B2

公开(公告)日：2025-04-29

申请号：US17493346

申请日：2021-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine Park ,  Youngtae Kim ,  Jihoon Jeong ,  Younghoo Kim

IPC: F26B5/00 ,  F26B3/02 ,  G03F7/40 ,  H01L21/67

Abstract: A fluid supply device configured to supply a processing fluid to a wafer processing device that includes a chamber is provided. The fluid supply device includes a reservoir configured to change the processing fluid into a supercritical fluid state; a wafer protecting device comprising a body configured to prevent a wafer in the chamber of the wafer processing device from being damaged by the processing fluid in the supercritical fluid state by receiving the processing fluid in the supercritical fluid state and limiting a speed of the processing fluid; and a fluid supply line configured to provide a path for the processing fluid between the reservoir and the wafer protecting device and a path for the processing fluid between the wafer protecting device and the wafer processing device.

公开(公告)号：US12198923B2

公开(公告)日：2025-01-14

申请号：US17660449

申请日：2022-04-25

Applicant: Semes Co., Ltd. ,  Samsung Electronics Co., Ltd.

Inventor： Hae-Won Choi ,  Anton Koriakin ,  Sangjine Park Park ,  Keonyoung Kim ,  Sukhoon Kim ,  Seohyun Kim ,  Young-Hoo Kim ,  Kuntack Lee ,  Jihoon Jeong

IPC: H01L21/02 ,  C11D1/72 ,  C11D3/43 ,  H01L21/67

Abstract: In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.

公开(公告)号：US11935772B2

公开(公告)日：2024-03-19

申请号：US17381507

申请日：2021-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seohyun Kim ,  Younghoo Kim ,  Sangjine Park ,  Kuntack Lee ,  Jihoon Jeong

IPC: H01L21/677

CPC classification number: H01L21/67703 ,  H01L21/67739

Abstract: An apparatus for processing a substrate may include a wet chamber, a dry chamber, a first transfer robot and a shared shutter. The wet chamber may be configured to process the substrate using a chemical. The dry chamber may be adjacent the wet chamber and configured to dry the substrate processed by the wet chamber. The first transfer robot may be configured to transfer the substrate between the wet chamber and the dry chamber. The shared shutter may be between the wet chamber and the dry chamber. A connection opening through which the substrate may be transferred may be formed between the wet chamber and the dry chamber. The shared shutter may be configured to open and close the connection opening.

公开(公告)号：US11640115B2

公开(公告)日：2023-05-02

申请号：US17466101

申请日：2021-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon Jeong ,  Seohyun Kim ,  Sukhoon Kim ,  Younghoo Kim ,  Sangjine Park ,  Kuntack Lee

IPC: G03F7/20 ,  G03F7/16

Abstract: A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.

公开(公告)号：US09136120B2

公开(公告)日：2015-09-15

申请号：US14573845

申请日：2014-12-17

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Young Taek Hong ,  Jinuk Lee ,  Junghun Lim ,  Jaewan Park ,  Chanjin Jeong ,  Hoon Han ,  Seonghwan Park ,  Yanghwa Lee ,  Sang Won Bae ,  Daehong Eom ,  Byoungmoon Yoon ,  Jihoon Jeong ,  Kyunghyun Kim ,  Kyounghwan Kim ,  ChangSup Mun ,  Se-Ho Cha ,  Yongsun Ko

IPC: H01L21/302 ,  H01L21/02 ,  C09K13/04 ,  C23F1/16 ,  C09K13/06 ,  H01L21/311 ,  H01L29/66 ,  H01L29/788 ,  H01L29/792 ,  H01L27/115

CPC classification number: H01L21/02658 ,  C09K13/04 ,  C09K13/06 ,  C23F1/16 ,  H01L21/31111 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

Abstract: Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

公开(公告)号：US20230244150A1

公开(公告)日：2023-08-03

申请号：US18186359

申请日：2023-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon Jeong ,  Seohyun Kim ,  Sukhoon Kim ,  Younghoo Kim ,  Sangjine Park ,  Kuntack Lee

IPC: G03F7/16 ,  G03F7/20

CPC classification number: G03F7/16 ,  G03F7/70033

Abstract: A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.

公开(公告)号：US20230010670A1

公开(公告)日：2023-01-12

申请号：US17582620

申请日：2022-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangjine Park ,  Jihoon Jeong ,  Younghoo Kim ,  Kuntack Lee

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/02

Abstract: Provided is a substrate drying apparatus. The substrate drying apparatus may include an upper chamber body including an inlet configured to introduce a supercritical fluid into a chamber space, a lower chamber body including an outlet configured to discharge the supercritical fluid outside the chamber space, and a stage configured to be loaded with a wet substrate and arranged in the chamber space, wherein the upper chamber body and the lower chamber body are configured such that the chamber space is closed by bringing the upper chamber body into contact with the lower chamber body, and the chamber space is opened by separating the upper chamber body from the lower chamber body, and the stage comprises a heater configured to heat the substrate and the supercritical fluid.

公开(公告)号：US11342203B2

公开(公告)日：2022-05-24

申请号：US16739409

申请日：2020-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon Jeong ,  Mihyun Park ,  Yongsun Ko ,  Kwangwook Lee ,  Kuntack Lee ,  Hayoung Jeon ,  Yongjhin Cho ,  Jihoon Cha

IPC: H01L21/02 ,  H01L21/67

Abstract: A substrate cleaning apparatus includes a support inside a chamber to hold a substrate, a first supply source inside the chamber that includes a first nozzle along a first direction and facing an upper surface of the support, the first nozzle to spray polymer and solvent onto the substrate to form a coating, and a second nozzle at an oblique angle to the first direction and facing an edge of the support to inject a hot gas toward the coating to volatilize the solvent, a second supply source inside the chamber and having a third nozzle facing the upper surface of the support to inject a peeling treatment to the coating to peel the coating from the substrate, and a third supply source inside the chamber and facing a lower surface of the support to inject the hot gas to heat a second surface of the substrate.

公开(公告)号：US20210217636A1

公开(公告)日：2021-07-15

申请号：US17217417

申请日：2021-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Jhin Cho ,  Young-Hoo Kim ,  Jihoon Jeong ,  Yungjun Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Hyosan Lee

IPC: H01L21/67 ,  H01L21/02

Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

公开(公告)号：US09627233B2

公开(公告)日：2017-04-18

申请号：US14187556

申请日：2014-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： SeokHoon Kim ,  Yongmyung Jun ,  Yongsun Ko ,  Kyoungseob Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Jihoon Jeong ,  Yong-Jhin Cho

IPC: B05B1/14 ,  H01L21/67

CPC classification number: H01L21/6708 ,  H01L21/67017 ,  H01L21/67051

Abstract: Provided is a substrate treating apparatus including a housing; a plurality of opening-and-closing members configured to provide a driving force for opening and closing the housing; a fluid storing member supplying a fluid to the opening-and-closing members; and a fluid distribution unit connected to the fluid storing member via a supply conduit to distribute the fluid supplied from the fluid storing member to the opening-and-closing members. The fluid distribution unit includes a distribution conduit diverging from the supply conduit and connected to a corresponding one of the opening-and-closing members; and a fluid distribution member provided at a junction between the supply conduit and the distribution conduit.