DUAL RESOLUTION SPECTROMETER, AND SPECTROMETRIC MEASUREMENT APPARATUS AND METHOD USING THE SPECTROMETER

    公开(公告)号:US20240035957A1

    公开(公告)日:2024-02-01

    申请号:US18118816

    申请日:2023-03-08

    CPC classification number: G01N21/255 G01N21/27 G01N21/9501

    Abstract: A dual resolution spectrometer includes a slit plate comprising a slit receiving light reflected from a measurement target. The slit plate directs the light reflected from the measurement target to a first mirror. The first mirror reflects light from the slit to a diffraction grating. The diffraction grating disperses light from the first mirror according to a wavelength of the light. The diffraction grating directs light in a first wavelength region to a second mirror and directs light in a second wavelength region to a third mirror. The second mirror reflects the light in the first wavelength region to a detector. The third mirror reflects the light in the second wavelength region to the detector. The detector detects the light in the first wavelength region and the light in the second wavelength region with different resolutions from each other.

    Substrate inspection method and method of fabricating a semiconductor device using the same

    公开(公告)号:US11486834B2

    公开(公告)日:2022-11-01

    申请号:US16709222

    申请日:2019-12-10

    Abstract: Disclosed are a substrate inspection method and a method of fabricating a semiconductor device using the same. The inspection method may include measuring a target area of a substrate using a pulsed beam to obtain a first peak, measuring a near field ultrasound, which is produced by the pulsed beam in a near field region including the target area, using a first continuous wave beam different from the pulsed beam to obtain a second peak, and measuring a far field ultrasound, which is produced by the near field ultrasound in a far field region outside the near field region, using a second continuous wave beam to examine material characteristics of the substrate.

    Inspection method, inspection system, and method of fabricating semiconductor package using the same

    公开(公告)号:US10460436B2

    公开(公告)日:2019-10-29

    申请号:US15691958

    申请日:2017-08-31

    Abstract: Disclosed are an inspection method, an inspection system, and a method of fabricating a semiconductor package using the same. The inspection method comprises obtaining a reference value by measuring a surface profile of a reference pattern, scanning reference images of the reference pattern by using a plurality of optical inspection conditions, obtaining estimation values of the reference pattern that are measured from the reference images, selecting an desired optical inspection condition among the plurality of optical inspection conditions by comparing the reference value with the estimation values, scanning a target image of a target pattern by using the desired optical inspection condition, and obtaining an error value by quantitatively comparing the target image with a design image of the target pattern.

    Apparatus and method for measuring thickness

    公开(公告)号:US10088297B2

    公开(公告)日:2018-10-02

    申请号:US15464896

    申请日:2017-03-21

    Abstract: Disclosed are apparatuses and methods for measuring a thickness. The apparatus for measuring a thickness including a light source that emits a femto-second laser, an optical coupler through which a portion of the femto-second laser is incident onto a target and other portion of the femto-second laser is incident onto a reference mirror, a detector configured to receive a reflection signal reflected on the reference mirror and a sample signal generated from the target and configured to measure a thickness of the target based on an interference signal between the reflection signal and the sample signal, and a plurality of optical fiber lines configured to connect the light source, the optical coupler, and the detector to each other may be provided.

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