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    Electronic device and method for providing map service
    12.
    发明授权
    Electronic device and method for providing map service 有权

    公开(公告)号：US10140769B2

    公开(公告)日：2018-11-27

    申请号：US14950168

    申请日：2015-11-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung-Tae Kim ,  Shin-Jun Lee ,  Eun-Seon Noh ,  Sun-Kee Lee ,  Cheol-Ho Cheong ,  Hyung-Jin Park ,  Yo-Han Lee ,  Dong-Soo Han

    IPC: G06T19/00 ,  G06F3/14 ,  G05D1/02

    Abstract: Provided is an electronic device and method for providing three-dimensional (3D) map processing and a 3D map service. The electronic device includes a memory configured to store an image set and a map platform module which is functionally connected with the memory and is implemented with a processor. The map platform module is configured to obtain an image set comprising a plurality of images for a path on an external space surrounding the electronic device, to determine an area corresponding to an object included in the external space from at least one of the plurality of images, to obtain information about the object based on whether the object is configured to communicatively connect with the electronic device, and to display the information in association with the area through a display functionally connected with the electronic device. Other embodiments are also possible.

    Nonvolatile memory device and method of programming in the same
    16.
    发明授权
    Nonvolatile memory device and method of programming in the same 有权

    公开(公告)号：US11282575B2

    公开(公告)日：2022-03-22

    申请号：US17007767

    申请日：2020-08-31

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yo-Han Lee

    IPC: G11C16/10 ,  G11C16/08 ,  G11C16/20 ,  G11C16/24 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  G11C16/04 ,  H01L27/11556 ,  H01L27/11582

    Abstract: In a method of programming in a nonvolatile memory device including a memory cell region including a first metal pad and a peripheral circuit region including a second metal pad, wherein the peripheral circuit region is vertically connected to the memory cell region by the first metal pad and the second metal pad, a memory block in the memory cell region including a plurality of stacks disposed in a vertical direction is provided where the memory block includes cell strings each of which includes memory cells connected in series in the vertical direction between a source line and each of bitlines. A plurality of intermediate switching transistors disposed in a boundary portion between two adjacent stacks in the vertical direction is provided, where the intermediate switching transistors perform a switching operation to control electrical connection of the cell strings, respectively. A boosting operation is performed to boost voltages of channels of the plurality of stacks while controlling the switching operation of the intermediate switching transistors during a program operation with respect to the memory block. Program voltage disturbance and pass voltage disturbance are reduced through control of the switching operation of the intermediate switching transistors.

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