公开(公告)号：US20180181462A1

公开(公告)日：2018-06-28

申请号：US15391455

申请日：2016-12-27

Applicant: SanDisk Technologies LLC

Inventor： Pitamber Shukla ,  Joanna Lai ,  Henry Chin ,  Deepak Raghu ,  Abhilash Kashyap

IPC: G06F11/10 ,  G11C29/52 ,  G11C16/34 ,  G11C16/28 ,  G11C16/10

CPC classification number: G06F11/1068 ,  G11C16/10 ,  G11C16/28 ,  G11C16/3459 ,  G11C29/028 ,  G11C29/52 ,  G11C2029/0407

Abstract: Technology is described herein for operating non-volatile storage. In one embodiment, the memory system tracks which adjustments to default values for hard bit read reference voltages are most frequently successful to decode data in non-volatile memory cells. In response to a process that uses only hard bits failing to successfully decode data in a group of the non-volatile memory cells, the memory system attempts to decode the data in the group of non-volatile memory cells using dynamic hard bit read reference voltages and dynamic soft bit read reference voltages that correspond to only a subset of the most frequently successful adjustments to the default values for the hard bit read reference voltages. By only using a subset of the most frequently successful adjustments to the default values for the hard bit read reference voltages time and power is saved.

公开(公告)号：US10007311B2

公开(公告)日：2018-06-26

申请号：US15237139

申请日：2016-08-15

Applicant: SanDisk Technologies LLC

Inventor： Deepak Raghu ,  Pao-Ling Koh ,  Philip Reusswig ,  Chris Nga Yee Yip ,  Jun Wan ,  Yan Li

IPC: G11C7/04 ,  G06F1/20 ,  G06F3/06

CPC classification number: G06F1/206 ,  G06F1/3225 ,  G06F1/3275 ,  G06F3/0616 ,  G06F3/0653 ,  G06F3/0688 ,  Y02D10/14

Abstract: A storage device with a memory may modify throttling to reduce cross temperature effects. The decision to throttle may be based on a memory device temperature (i.e. temperature throttling) or may be based on the memory device's health, usage, or performance (e.g. hot count or bit error rate). Temperature throttling may be implemented that considers the memory device's health, usage, or performance (e.g. hot count or bit error rate). Likewise, throttling based on the memory device's health, usage, or performance may utilize the memory device's temperature to optimize throttling time. For example, a test mode matrix (TMM) may be modified to depend on temperature.

公开(公告)号：US20180046527A1

公开(公告)日：2018-02-15

申请号：US15237196

申请日：2016-08-15

Applicant: SanDisk Technologies LLC

Inventor： Philip Reusswig ,  Deepak Raghu ,  Zelei Guo ,  Chris Nga Yee Yip

IPC: G06F11/07 ,  G06F11/14 ,  G11C29/50

CPC classification number: G06F11/076 ,  G06F11/1435 ,  G11C11/5642 ,  G11C16/26 ,  G11C29/021 ,  G11C29/028 ,  G11C29/50004 ,  G11C2029/5004

Abstract: A storage device with a memory may utilize an optimized read retry operation. A read retry table includes a number of read retry cases with updated read thresholds. The read thresholds in the read retry table may be used to avoid errors caused by shifting of charge levels. The optimization of read retry includes weighting or reordering of the read retry cases in the read retry table. The selection of a read retry case (and corresponding read thresholds) are determined based on the weighting or reordering.