Method Of Generating X-Ray Diffraction Data For Integral Detection Of Twin Defects In Super-Hetero-Epitaxial Materials
    11.
    发明申请
    Method Of Generating X-Ray Diffraction Data For Integral Detection Of Twin Defects In Super-Hetero-Epitaxial Materials 有权
    产生X射线衍射数据的方法,用于在超异质外延材料中双缺陷的积分检测

    公开(公告)号:US20090103680A1

    公开(公告)日:2009-04-23

    申请号:US12254150

    申请日:2008-10-20

    IPC分类号: G01N23/207

    CPC分类号: G01N23/207

    摘要: A method provides X-ray diffraction data suitable for integral detection of a twin defect in a strained or lattice-matched epitaxial material made from components having crystal structures having symmetry belonging to different space groups. The material is mounted in an X-ray diffraction (XRD) system. In one embodiment, the XRD system's goniometer angle Ω is set equal to (θB−β) where θB is a Bragg angle for a designated crystal plane of the alloy that is disposed at a non-perpendicular orientation with respect to the {111) crystal plane, and β is the angle between the designated crystal plane and a {111} crystal plane of one of the epitaxial components. The XRD system's detector angle is set equal to (θB+β). The material can be rotated through an angle of azimuthal rotation φ about the axis aligned with the material. Using the detector, the intensity of the X-ray diffraction is recorded at least at the angle at which the twin defect occurs.

    摘要翻译: 一种方法提供了适用于由具有属于不同空间群的对称性的晶体结构的组分制成的应变或晶格匹配的外延材料中的双缺陷的积分检测的X射线衍射数据。 该材料安装在X射线衍射(XRD)系统中。 在一个实施例中,XRD系统的测角仪角度Ω被设置为等于(θB-β),其中θB是相对于{111)晶体以非垂直取向设置的合金的指定晶面的布拉格角 平面,β是指定的晶面与外延成分之一的{111}晶面之间的角度。 XRD系统的检测器角度设置为等于(θB+β)。 材料可以围绕与材料对准的轴线旋转方位角旋转角度。 使用检测器,至少以发生双瑕疵的角度记录X射线衍射的强度。

    Lock-in imaging system for detecting disturbances in fluid
    12.
    发明授权
    Lock-in imaging system for detecting disturbances in fluid 有权
    锁定成像系统,用于检测流体中的扰动

    公开(公告)号:US08913124B2

    公开(公告)日:2014-12-16

    申请号:US13020194

    申请日:2011-02-03

    摘要: A lock-in imaging system is configured for detecting a disturbance in air. The system includes an airplane, an interferometer, and a telescopic imaging camera. The airplane includes a fuselage and a pair of wings. The airplane is configured for flight in air. The interferometer is operatively disposed on the airplane and configured for producing an interference pattern by splitting a beam of light into two beams along two paths and recombining the two beams at a junction point in a front flight path of the airplane during flight. The telescopic imaging camera is configured for capturing an image of the beams at the junction point. The telescopic imaging camera is configured for detecting the disturbance in air in an optical path, based on an index of refraction of the image, as detected at the junction point.

    摘要翻译: 锁定成像系统被配置为检测空气中的干扰。 该系统包括飞机,干涉仪和伸缩成像相机。 飞机包括机身和一对机翼。 飞机配置为在空中飞行。 干涉仪可操作地设置在飞机上并且被配置用于通过沿着两条路径将光束分成两束而产生干涉图案,并且在飞行中在飞机的前飞行路径中的接合点处重新组合两个波束。 伸缩成像照相机被配置为在接合点捕获光束的图像。 所述伸缩成像照相机被配置为基于在所述连接点检测到的所述图像的折射率来检测光路中的空气中的干扰。

    Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials
    13.
    发明申请
    Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials 有权
    具有单晶性质的三面体立方体半导体材料和基于这种材料的器件

    公开(公告)号:US20090206368A1

    公开(公告)日:2009-08-20

    申请号:US12288379

    申请日:2008-10-20

    CPC分类号: G01N23/207

    摘要: Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.

    摘要翻译: 开发基于温度依赖性取向模型的生长条件,以使得能够在三面晶体基底的(0001)面上形成[111]取向的立方体IV族,II-V族和II-VI族晶体, 控制使得与多数单晶相比,原生双晶的体积百分比从约40%降低至约0.3%。 在本实施例和其他实施例中,堆垛层错的控制可以产生基本上没有缺陷的这些材料的单晶半导体,或者具有用于声子散射的具有孪晶晶体的改进的热电材料,同时保持电气完整性。 这些方法可以选择性地产生立方晶三面体外延半导体材料,其中立方体层基本上与下面的三角形材料直接对准或者60度旋转。

    Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof
    15.
    发明授权
    Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof 有权
    超异质外延半导体材料的混合带隙工程及其产品

    公开(公告)号:US08226767B2

    公开(公告)日:2012-07-24

    申请号:US12254134

    申请日:2008-10-20

    IPC分类号: C30B25/18

    CPC分类号: G01N23/207

    摘要: “Super-hetero-epitaxial” combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a “Tri-Unity” system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.

    摘要翻译: “超异质外延”组合包括在具有不同晶体结构的不同材料上的一种材料的外延生长。 可以使用“Tri-Unity”系统来识别兼容的晶体结构。 基于根据晶格匹配方程确定构成材料的混合晶格常数,为每种组合提供了新的带隙工程图。 对于先前测试的材料,使用已知的带隙图,可以通过参考图和晶格匹配方程来形成具有匹配所需衬底并具有期望带隙特性的晶格常数的新材料。 在一个实施例中,该分析使得可以配制新的超异质外延半导体系统,例如基于c面LaF 3上的基于IV族合金的系统; Ⅳ族合金在c面l石上; Ⅲ-Ⅴ族合金在c面硅酸盐岩上; 和II-VI族组合在c面蓝宝石上。

    Micro spectrometer for parallel light and method of use
    16.
    发明授权
    Micro spectrometer for parallel light and method of use 有权
    微光谱仪用于平行光和使用方法

    公开(公告)号:US08059273B2

    公开(公告)日:2011-11-15

    申请号:US12496788

    申请日:2009-07-02

    IPC分类号: G01J3/28

    摘要: A spectrometer system includes an optical assembly for collimating light, a micro-ring grating assembly having a plurality of coaxially-aligned ring gratings, an aperture device defining an aperture circumscribing a target focal point, and a photon detector. An electro-optical layer of the grating assembly may be electrically connected to an energy supply to change the refractive index of the electro-optical layer. Alternately, the gratings may be electrically connected to the energy supply and energized, e.g., with alternating voltages, to change the refractive index. A data recorder may record the predetermined spectral characteristic. A method of detecting a spectral characteristic of a predetermined wavelength of source light includes generating collimated light using an optical assembly, directing the collimated light onto the micro-ring grating assembly, and selectively energizing the micro-ring grating assembly to diffract the predetermined wavelength onto the target focal point, and detecting the spectral characteristic using a photon detector.

    摘要翻译: 光谱仪系统包括用于准直光的光学组件,具有多个同轴对准的环形光栅的微环格栅组件,限定限定目标焦点的孔的孔装置和光子检测器。 光栅组件的电光层可电连接到能量源以改变电光层的折射率。 或者,光栅可以电连接到能量供应并且例如用交流电压通电,以改变折射率。 数据记录器可以记录预定的光谱特性。 检测源光的预定波长的光谱特性的方法包括使用光学组件产生准直光,将准直光引导到微环格栅组件上,以及选择性地激励微环格栅组件以将预定波长衍射到 目标焦点,并使用光子检测器检测光谱特性。

    Hybrid Bandgap Engineering For Super-Hetero-Epitaxial Semiconductor Materials, and Products Thereof
    17.
    发明申请
    Hybrid Bandgap Engineering For Super-Hetero-Epitaxial Semiconductor Materials, and Products Thereof 有权
    超异质外延半导体材料的混合带隙工程及其产品

    公开(公告)号:US20090220047A1

    公开(公告)日:2009-09-03

    申请号:US12254134

    申请日:2008-10-20

    IPC分类号: G01N23/20 H01B1/02 G06F17/10

    CPC分类号: G01N23/207

    摘要: “Super-hetero-epitaxial” combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a “Tri-Unity” system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.

    摘要翻译: “超异质外延”组合包括在具有不同晶体结构的不同材料上的一种材料的外延生长。 可以使用“Tri-Unity”系统来识别兼容的晶体结构。 基于根据晶格匹配方程确定构成材料的混合晶格常数,为每种组合提供了新的带隙工程图。 对于先前测试的材料,使用已知的带隙图,可以通过参考图和晶格匹配方程来形成具有匹配所需衬底并具有期望带隙特性的晶格常数的新材料。 在一个实施例中,该分析使得可以配制新的超异质外延半导体系统,例如基于c面LaF 3上的基于IV族合金的系统; Ⅳ族合金在c面l石上; Ⅲ-Ⅴ族合金在c面硅酸盐岩上; 和II-VI族组合在c面蓝宝石上。

    Micro Spectrometer for Parallel Light and Method of Use
    18.
    发明申请
    Micro Spectrometer for Parallel Light and Method of Use 有权
    用于平行光的微光谱仪和使用方法

    公开(公告)号:US20100039643A1

    公开(公告)日:2010-02-18

    申请号:US12496788

    申请日:2009-07-02

    IPC分类号: G01J3/28

    摘要: A spectrometer system includes an optical assembly for collimating light, a micro-ring grating assembly having a plurality of coaxially-aligned ring gratings, an aperture device defining an aperture circumscribing a target focal point, and a photon detector. An electro-optical layer of the grating assembly may be electrically connected to an energy supply to change the refractive index of the electro-optical layer. Alternately, the gratings may be electrically connected to the energy supply and energized, e.g., with alternating voltages, to change the refractive index. A data recorder may record the predetermined spectral characteristic. A method of detecting a spectral characteristic of a predetermined wavelength of source light includes generating collimated light using an optical assembly, directing the collimated light onto the micro-ring grating assembly, and selectively energizing the micro-ring grating assembly to diffract the predetermined wavelength onto the target focal point, and detecting the spectral characteristic using a photon detector.

    摘要翻译: 光谱仪系统包括用于准直光的光学组件,具有多个同轴对准的环形光栅的微环格栅组件,限定限定目标焦点的孔的孔装置和光子检测器。 光栅组件的电光层可电连接到能量源以改变电光层的折射率。 或者,光栅可以电连接到能量供应并且例如用交流电压通电,以改变折射率。 数据记录器可以记录预定的光谱特性。 检测源光的预定波长的光谱特性的方法包括使用光学组件产生准直光,将准直光引导到微环格栅组件上,以及选择性地激励微环格栅组件以将预定波长衍射到 目标焦点,并使用光子检测器检测光谱特性。

    Micro Ring Grating Spectrometer with Adjustable Aperture
    19.
    发明申请
    Micro Ring Grating Spectrometer with Adjustable Aperture 有权
    具有可调孔径的微环光栅

    公开(公告)号:US20100039641A1

    公开(公告)日:2010-02-18

    申请号:US12487735

    申请日:2009-06-19

    IPC分类号: G01J3/04 G01J3/28

    摘要: A spectrometer includes a micro-ring grating device having coaxially-aligned ring gratings for diffracting incident light onto a target focal point, a detection device for detecting light intensity, one or more actuators, and an adjustable aperture device defining a circular aperture. The aperture circumscribes a target focal point, and directs a light to the detection device. The aperture device is selectively adjustable using the actuators to select a portion of a frequency band for transmission to the detection device. A method of detecting intensity of a selected band of incident light includes directing incident light onto coaxially-aligned ring gratings of a micro-ring grating device, and diffracting the selected band onto a target focal point using the ring gratings. The method includes using an actuator to adjust an aperture device and pass a selected portion of the frequency band to a detection device for measuring the intensity of the selected portion.

    摘要翻译: 光谱仪包括具有用于将入射光衍射到目标焦点的同轴对准环形光栅的微环格栅装置,用于检测光强度的检测装置,一个或多个致动器以及限定圆形孔径的可调节孔径装置。 光圈限定目标焦点,并将光引导到检测装置。 使用致动器可选择性地调节孔径装置,以选择频带的一部分以传输到检测装置。 检测入射光的所选频带的强度的方法包括将入射光引导到微环光栅装置的同轴对准的环形光栅上,并使用环形光栅将所选择的带衍射到目标焦点上。 该方法包括使用致动器来调节孔径装置并将频带的选定部分传递到用于测量所选部分的强度的检测装置。