公开(公告)号：US09195049B2

公开(公告)日：2015-11-24

申请号：US13554443

申请日：2012-07-20

Applicant: Kyu-hwan Choi ,  Jung-mok Bae ,  Hoon Song ,  Sang-yoon Lee ,  Yoon-sun Choi ,  Eok-su Kim

Inventor： Kyu-hwan Choi ,  Jung-mok Bae ,  Hoon Song ,  Sang-yoon Lee ,  Yoon-sun Choi ,  Eok-su Kim

IPC: G02B26/00 ,  G02B1/06 ,  G02B5/06 ,  G02B27/22 ,  H04N13/04 ,  G09G3/00 ,  G09G3/34 ,  G09G3/38

CPC classification number: G02B26/005 ,  G02B5/06 ,  G02B27/2214 ,  G09G3/003 ,  G09G3/3406 ,  G09G3/38 ,  H04N13/32

Abstract: A light refraction controlling panel, a 3D-display, and a method of operating a 3D-display are provided. The light refraction controlling panel includes a transparent substrate, a barrier wall on the transparent substrate, first to fourth electrodes on the barrier wall, the first to fourth electrodes being separated from each other, an electro-wetting prism within the barrier wall, the electro-wetting prism being configured to refract incident light to a desired direction, and an isolation layer between the barrier wall and the first to fourth electrodes, and the electro-wetting prism. One electrode of two adjacent electrodes of the first to fourth electrodes is inside an other electrode of the two adjacent electrodes.

Abstract translation: 提供了光折射控制面板，3D显示器和操作3D显示器的方法。 光折射控制面板包括透明基板，透明基板上的阻挡壁，阻挡壁上的第一至第四电极，第一至第四电极彼此分离，阻挡壁内的电润湿棱镜，电气 湿润棱镜被配置为将入射光折射到期望的方向，以及在阻挡壁和第一至第四电极之间的隔离层以及电润湿棱镜。 第一至第四电极的两个相邻电极的一个电极在两个相邻电极的另一个电极内。

公开(公告)号：US09035294B2

公开(公告)日：2015-05-19

申请号：US13550752

申请日：2012-07-17

Applicant: Joon-seok Park ,  Tae-sang Kim ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Jong-baek Seon ,  Kyoung-seok Son ,  Sang-yoon Lee ,  Seok-jun Seo

Inventor： Joon-seok Park ,  Tae-sang Kim ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Jong-baek Seon ,  Kyoung-seok Son ,  Sang-yoon Lee ,  Seok-jun Seo

IPC: H01L29/10 ,  B32B3/26 ,  H01L29/786 ,  H01L29/49

CPC classification number: B32B3/26 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/7869 ,  Y10T428/24479

Abstract: A transistor may include a channel layer formed of an oxide semiconductor. The oxide semiconductor may include GaZnON, and a proportion of Ga content to a total content of Ga and Zn of the channel layer is about 0.5 to about 4.5 at %.

Abstract translation: 晶体管可以包括由氧化物半导体形成的沟道层。 氧化物半导体可以包括GaZnON，并且沟道层的Ga含量与Ga和Zn的总含量的比例为约0.5至约4.5原子％。

公开(公告)号：US08735229B2

公开(公告)日：2014-05-27

申请号：US12110744

申请日：2008-04-28

Applicant: Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

Inventor： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

IPC: H01L21/00

CPC classification number: H01L29/7869

Abstract: A ZnO-based thin film transistor (TFT) is provided herein. Also provided is a method for manufacturing the TFT. The ZnO-based TFT is very sensitive to the oxygen concentration present in a channel layer. In order to prevent damage to a channel layer of a bottom gate TFT, and to avoid a deep negative threshold voltage resulting from damage to the channel layer, the method for manufacturing the ZnO-based TFT comprises formation of an etch stop layer or a passivation layer comprising unstable or incompletely bonded oxygen, and annealing the layers to induce an interfacial reaction between the oxide layer and the channel layer and to reduce the carrier concentration.

Abstract translation: 本文提供了一种ZnO基薄膜晶体管（TFT）。 还提供了一种用于制造TFT的方法。 ZnO基TFT对通道层中存在的氧浓度非常敏感。 为了防止对底栅TFT的沟道层的损坏，并且为了避免由于对沟道层的损坏而产生的深负阈值电压，制造ZnO基TFT的方法包括形成蚀刻停止层或钝化层 层，其包含不稳定或不完全结合的氧，并且退火层以在氧化物层和沟道层之间引起界面反应并降低载流子浓度。

公开(公告)号：US08664021B2

公开(公告)日：2014-03-04

申请号：US13297495

申请日：2011-11-16

Applicant: Sun-kook Kim ,  In-seo Kee ,  Sang-yoon Lee

Inventor： Sun-kook Kim ,  In-seo Kee ,  Sang-yoon Lee

IPC: H01L21/00 ,  H01L33/00

CPC classification number: H01L27/3293 ,  H01L25/048 ,  H01L27/3211 ,  H01L27/322 ,  H01L51/5253 ,  H01L51/5265 ,  H01L51/5281 ,  H01L2251/5315 ,  H01L2251/5338 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An organic light-emitting display device includes a plurality of first and second electrodes which are spaced apart from each other on a substrate, a plurality of light-emitting layers between the first and second electrodes, a flexible thin encapsulation film on the second electrodes, and a color filter on the flexible thin encapsulation film.

Abstract translation: 一种有机发光显示装置，包括在基板上彼此间隔开的多个第一和第二电极，在第一和第二电极之间的多个发光层，在第二电极上的柔性薄封装膜， 和柔性薄膜封装膜上的滤色片。

公开(公告)号：US08593372B2

公开(公告)日：2013-11-26

申请号：US13360991

申请日：2012-01-30

Applicant: In-seo Kee ,  Sang-yoon Lee ,  Hong-shik Shim

Inventor： In-seo Kee ,  Sang-yoon Lee ,  Hong-shik Shim

IPC: G09G5/00

CPC classification number: H04M1/0266 ,  H04M1/0202

Abstract: A foldable display device includes a first display panel which displays a portion of an image; a second display panel which displays a second portion different from the first portion of the image; a first protecting window on the first display panel; a second protecting window on the second display panel; and a flexible material layer between the first and second protecting windows. Side surfaces of the first and second protecting windows which contact the flexible material layer, respectively, are inclined with respect to a surface of each of the first and second protecting windows.

Abstract translation: 可折叠显示装置包括：第一显示面板，其显示图像的一部分; 显示与图像的第一部分不同的第二部分的第二显示面板; 第一显示面板上的第一保护窗口; 第二显示面板上的第二保护窗; 以及在第一和第二保护窗之间的柔性材料层。 分别接触柔性材料层的第一和第二保护窗的侧表面相对于第一和第二保护窗中的每一个的表面倾斜。

公开(公告)号：US07915610B2

公开(公告)日：2011-03-29

申请号：US12615315

申请日：2009-11-10

Applicant: Myung-kwan Ryu ,  Jun-seong Kim ,  Sang-yoon Lee ,  Euk-che Hwang ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Myung-kwan Ryu ,  Jun-seong Kim ,  Sang-yoon Lee ,  Euk-che Hwang ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L29/10

CPC classification number: H01L29/7869

Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near the surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

Abstract translation: 这里提供了一种ZnO基薄膜晶体管（TFT），以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的，具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解，因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯（Cl）。

公开(公告)号：US20100072480A1

公开(公告)日：2010-03-25

申请号：US12453295

申请日：2009-05-06

Applicant: Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66765

Abstract: A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

Abstract translation: 提供薄膜晶体管（TFT）及其制造方法，TFT在栅极上包括栅极绝缘层。 可以在对应于栅极的栅极绝缘层的一部分上形成沟道。 可以在通道的表面上形成金属材料。 金属材料使通道结晶。 源极和漏极可以接触通道的侧表面。

公开(公告)号：US20100059756A1

公开(公告)日：2010-03-11

申请号：US12453293

申请日：2009-05-06

Applicant: Kyung-bae Park ,  Myung-kwan Ryu ,  Byung-wook Yoo ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Kyung-bae Park ,  Myung-kwan Ryu ,  Byung-wook Yoo ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/78609 ,  H01L29/78618

Abstract: Disclosed is a thin film transistor (TFT). The TFT may include an intermediate layer between a channel and a source and drain. An increased off current, which may occur to a drain area of the TFT, is reduced due to the intermediate layer. Accordingly, the TFT may be stably driven.

Abstract translation: 公开了一种薄膜晶体管（TFT）。 TFT可以包括通道与源极和漏极之间的中间层。 由于中间层，由于TFT的漏极区域可能发生的增加的截止电流减小。 因此，可以稳定地驱动TFT。

公开(公告)号：US09477101B2

公开(公告)日：2016-10-25

申请号：US13360616

申请日：2012-01-27

Applicant: Seung-hoon Han ,  In-kyeong Yoo ,  Sang-yoon Lee ,  Hong-seok Lee ,  Moon-gyu Han ,  Sun-kook Kim

Inventor： Seung-hoon Han ,  In-kyeong Yoo ,  Sang-yoon Lee ,  Hong-seok Lee ,  Moon-gyu Han ,  Sun-kook Kim

IPC: G02F1/11 ,  B82Y20/00 ,  G02F1/017 ,  G02F1/335

CPC classification number: G02F1/335 ,  B82Y20/00 ,  G02B27/22 ,  G02F1/017 ,  G02F1/11 ,  G02F1/292 ,  G02F2001/291 ,  G02F2202/36 ,  G02F2202/40 ,  G02F2202/42 ,  G02F2203/22 ,  G03H1/2286 ,  G03H2001/2292 ,  Y10S977/834

Abstract: An acousto-optic device capable of increasing a range of a diffraction angle of output light by using a nanostructured acousto-optic medium, and an optical scanner, an optical modulator, a two-dimensional/three-dimensional (2D/3D) conversion stereoscopic image display apparatus, and a holographic display apparatus using the acousto-optic device. The acousto-optic device may include a nanostructured acousto-optic medium formed by at least two different mediums repeatedly alternating with each other, wherein at least one of the at least two different mediums includes an acousto-optic medium. The acousto-optic device having the aforementioned structure may increase the range of a diffraction angle of output light. Thus, various systems such as the optical scanner, the optical modulator, the 2D/3D conversion stereoscopic image display apparatus, and the holographic display apparatus may not require a separate optical system to increase an operational angle range, thereby decreasing a size of the system and/or improving a resolution of the system.

Abstract translation: 一种能够通过使用纳米结构的声光介质和光学扫描器，光学调制器，二维/三维（2D / 3D）转换立体视觉增强输出光的衍射角的范围的声光器件 图像显示装置和使用该声光装置的全息显示装置。 声光装置可以包括由至少两个不同介质形成的纳米结构的声光介质，所述至少两个介质彼此重复交替，其中所述至少两种不同介质中的至少一种包括声光介质。 具有上述结构的声光装置可以增加输出光的衍射角的范围。 因此，诸如光学扫描器，光学调制器，2D / 3D转换立体图像显示装置和全息显示装置的各种系统可能不需要单独的光学系统来增加操作角度范围，从而减小系统的尺寸 和/或提高系统的分辨率。

公开(公告)号：US09245779B2

公开(公告)日：2016-01-26

申请号：US13565943

申请日：2012-08-03

Applicant: Myung-kwan Ryu ,  Jong-baek Seon ,  Sang-yoon Lee

Inventor： Myung-kwan Ryu ,  Jong-baek Seon ,  Sang-yoon Lee

IPC: B05D3/02 ,  H01L21/67

CPC classification number: H01L21/6715 ,  H01L21/67098 ,  Y10T428/24942 ,  Y10T428/265

Abstract: A method of preparing a thin film includes coating a thin film-forming composition on a substrate, and heat-treating the coated thin film-forming composition under a pressure less than 760 Torr. The thin film includes a compact layer having a thickness in a range of greater than 50 Å to about 20,000 Å and a refractive index in a range of about 1.85 to about 2.0.

Abstract translation: 制备薄膜的方法包括在基材上涂覆薄膜形成组合物，并在低于760托的压力下对涂覆的薄膜形成组合物进行热处理。 该薄膜包括厚度在大于大至大约20,000范围内的折射率在约1.85至约2.0范围内的致密层。