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    Tunneling magneto-resistive sensors with buffer layers
    14.
    发明授权
    Tunneling magneto-resistive sensors with buffer layers 有权
    隧道磁阻传感器与缓冲层

    公开(公告)号：US09082958B2

    公开(公告)日：2015-07-14

    申请号：US14568645

    申请日：2014-12-12

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Bin Lu ,  Qing He ,  Mark Covington ,  Yunhao Xu ,  Wei Tian

    IPC: G11B5/39 ,  H01L43/08 ,  H01L43/02

    CPC classification number: H01L43/08 ,  G01R33/098 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/02

    Abstract: In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy. In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.

    Abstract translation: 在某些实施例中，隧道磁阻（TMR）传感器包括位于种子层和覆盖层之间的传感器堆叠。 种子层包括包含非磁性镍合金的第一缓冲层。 在某些实施例中，传感器堆叠包括顶部和底部屏蔽以及邻近底部屏蔽定位的种子层。 种子层具有包括镍合金的第一缓冲层。

    THIN FILMS HAVING LARGE TEMPERATURE COEFFICIENT OF RESISTANCE AND METHODS OF FABRICATING SAME
    15.
    发明申请
    THIN FILMS HAVING LARGE TEMPERATURE COEFFICIENT OF RESISTANCE AND METHODS OF FABRICATING SAME 有权
    具有较大温度系数的薄膜及其制造方法

    公开(公告)号：US20140146856A1

    公开(公告)日：2014-05-29

    申请号：US13687445

    申请日：2012-11-28

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Wei Tian ,  Declan Macken ,  Huaqing Yin ,  Venkateswara Rao Inturi ,  Eric Walter Singleton

    IPC: G01K7/16 ,  C23C14/06

    CPC classification number: G01K7/16 ,  C23C14/06 ,  G11B5/607 ,  H01C7/006 ,  H01C7/008 ,  H01C7/021 ,  H01C7/06

    Abstract: An apparatus comprises a head transducer and a resistive temperature sensor provided on the head transducer. The resistive temperature sensor comprises a first layer comprising a conductive material and having a temperature coefficient of resistance (TCR) and a second layer comprising at least one of a specular layer and a seed layer. A method is disclosed to fabricate such sensor with a laminated thin film structure to achieve a large TCR. The thicknesses of various layers in the laminated thin film are in the range of few to a few tens of nanometers. The combinations of the deliberately optimized multilayer thin film structures and the fabrication of such films at the elevated temperatures are disclosed to obtain the large TCR.

    Abstract translation: 一种装置包括头部换能器和设置在头部换能器上的电阻式温度传感器。 电阻温度传感器包括包含导电材料并具有温度系数电阻（TCR）的第一层和包括镜面层和晶种层中的至少一个的第二层。 公开了一种制造具有层压薄膜结构的这种传感器以实现大TCR的方法。 层压薄膜中各层的厚度在几十纳米的范围内。 公开了故意优化的多层薄膜结构和在升高的温度下制备这种薄膜的组合以获得大的TCR。

    Side shield formation
    17.
    发明授权
    Side shield formation 有权

    公开(公告)号：US10586559B1

    公开(公告)日：2020-03-10

    申请号：US16216419

    申请日：2018-12-11

    Applicant: Seagate Technology LLC

    Inventor： Jia Sun ,  Dong Lin ,  Shen Zhe ,  Jianhua Xue ,  Wei Tian ,  Joe Mundenar

    IPC: G11B5/31 ,  G11B5/11 ,  G11B5/115

    Abstract: A method includes forming a write pole layer having a front surface, a leading surface, a trailing surface and side surfaces connecting the leading surface to the trailing surface. The method also includes forming side shield layers proximate to the side surfaces of the write pole layer. A patterned sacrificial layer is deposited over the side shield layers, and a trailing surface bevel is formed on the write pole layer.

    Write head with reduced trailing shield—side shield spacing
    18.
    发明授权
    Write head with reduced trailing shield—side shield spacing 有权

    公开(公告)号：US10141014B1

    公开(公告)日：2018-11-27

    申请号：US15662682

    申请日：2017-07-28

    Applicant: Seagate Technology LLC

    Inventor： Kirill A. Rivkin ,  Wei Tian ,  XiaoHong Zhang ,  Yi Liu

    IPC: G11B5/23 ,  G11B5/31 ,  G11B5/127 ,  G11B5/11

    Abstract: A write head including a bearing surface and a write pole having a front surface that forms a portion of the bearing surface. The front surface has a leading edge, a trailing edge and side edges connecting the leading and trailing edges. The write head also includes side shields proximate to the side edges of the write pole, and a trailing shield over the write pole and the side shields. A trailing shield-write pole gap is present between the trailing edge and the trailing shield, and a trailing shield-side shield gap is present between the trailing shield and the side shields. The trailing shield side shield gap is substantially less than the trailing shield-write pole gap.

    Magnetic recording head front shield formation
    20.
    发明授权
    Magnetic recording head front shield formation 有权
    磁记录头前盾形成

    公开(公告)号：US09495979B1

    公开(公告)日：2016-11-15

    申请号：US14871597

    申请日：2015-09-30

    Applicant: Seagate Technology LLC

    Inventor： Xiaohong Zhang ,  Wei Tian ,  Zhe Shen ,  Dong Lin ,  Joseph Mundenar

    IPC: G11B5/31 ,  G11B5/127 ,  G11B5/39

    CPC classification number: G11B5/3912 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/3163

    Abstract: Implementations disclosed herein provide a method of forming a first layer of a front shield in a magnetic recording head, depositing an active shield control (ASC) device on the first layer, and forming a second layer of the front shield on top of the ASC device and the first layer of the front shield. In another implementation, an apparatus includes a write pole, and a two layer front shield formed on the write pole, including an ASC device between the two layers of the front shield.

    Abstract translation: 本文公开的实施方案提供了一种在磁记录头中形成前屏蔽的第一层的方法，在第一层上沉积主动屏蔽控制（ASC）装置，以及在ASC装置的顶部上形成前屏蔽的第二层 和前盾的第一层。 在另一个实施方式中，一种装置包括一个写入极和形成在写入极上的两层前屏蔽，其中包括在前屏蔽层的两层之间的ASC装置。

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