公开(公告)号：US20230269987A1

公开(公告)日：2023-08-24

申请号：US18139004

申请日：2023-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daiki Nakamura ,  Shingo EGUCHI ,  Tomoya AOYAMA ,  Nozomu SUGISAWA ,  Junya MARUYAMA ,  Kazuhiko FUJITA ,  Masataka SATO ,  Susumu KAWASHIMA

IPC: H10K59/35 ,  G06F1/16 ,  H10K59/131 ,  H10K77/10

CPC classification number: H10K59/353 ,  G06F1/1624 ,  G06F1/1652 ,  G06F1/1681 ,  H10K59/131 ,  H10K59/352 ,  H10K77/111 ,  H10K50/14

Abstract: Display unevenness in a display panel is suppressed. A display panel with a high aperture ratio of a pixel is provided. The display panel includes a first pixel electrode, a second pixel electrode, a third pixel electrode, a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, a first common layer, a second common layer, a common electrode, and an auxiliary wiring. The first common layer is positioned over the first pixel electrode and the second pixel electrode. The first common layer has a portion overlapping with the first light-emitting layer and a portion overlapping with the second light-emitting layer. The second common layer is positioned over the third pixel electrode. The second common layer has a portion overlapping with the third light-emitting layer. The common electrode has a portion overlapping with the first pixel electrode with the first common layer and the first light-emitting layer provided therebetween, a portion overlapping with the second pixel electrode with the first common layer and the second light-emitting layer provided therebetween, a portion overlapping with the third pixel electrode with the second common layer and the third light-emitting layer provided therebetween, and a portion in contact with a top surface of the auxiliary wiring.

公开(公告)号：US20190035820A1

公开(公告)日：2019-01-31

申请号：US16143970

申请日：2018-09-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junpei YANAKA ,  Kayo KUMAKURA ,  Masataka SATO ,  Satoru IDOJIRI ,  Kensuke YOSHIZUMI ,  Mari TATEISHI ,  Natsuko TAKASE

IPC: H01L27/12 ,  H01L23/29 ,  H01L27/32 ,  H01L51/00

CPC classification number: H01L27/1225 ,  H01L23/293 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/3262 ,  H01L51/003 ,  H01L2227/323

Abstract: To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.

公开(公告)号：US20180275474A1

公开(公告)日：2018-09-27

申请号：US15987952

申请日：2018-05-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka NAKADA ,  Masahiro KATAYAMA ,  Seiji YASUMOTO ,  Hiroki ADACHI ,  Masataka SATO ,  Koji KUSUNOKI ,  Yoshiharu HIRAKATA

IPC: G02F1/1362 ,  G06F3/041 ,  G02F1/1333 ,  H01L27/12

CPC classification number: G02F1/136286 ,  G02F1/13338 ,  G06F3/0412 ,  G06F2203/04103 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248 ,  H01L27/1255

Abstract: Provided is a novel display panel that is highly convenient or highly reliable, a novel input/output device that is highly convenient or highly reliable, or a method for manufacturing a novel display panel that is highly convenient or highly reliable. The present inventors conceived a structure including a first intermediate film, a first electrode including a region in contact with the first intermediate film, a pixel that includes a first display element including the first electrode and a pixel circuit electrically connected to the first display element, a signal line electrically connected to the pixel, and a terminal that includes a third conductive film electrically connected to the signal line and a second intermediate film including a region in contact with the third conductive film.

公开(公告)号：US20180061639A1

公开(公告)日：2018-03-01

申请号：US15687915

申请日：2017-08-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masataka SATO ,  Seiji YASUMOTO ,  Kayo KUMAKURA ,  Satoru IDOJIRI

IPC: H01L21/02 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L21/02694 ,  G02F2201/44 ,  H01L21/02488 ,  H01L21/67132 ,  H01L21/7806 ,  H01L27/1225 ,  H01L27/1266 ,  H01L29/66969

Abstract: The yield of a manufacturing process of a semiconductor device is increased. The mass productivity of a semiconductor device is increased. A semiconductor device is manufactured by forming a first material layer over a substrate; forming a second material layer over the first material layer; and separating the first material layer and the second material layer from each other; and heating the first material layer and the second material layer that are stacked before the separation. The first material layer includes a gas containing hydrogen, oxygen, or hydrogen and oxygen (e.g., water) in a metal oxide, for example. The second material layer includes a resin. The first material layer and the second material layer are separated from each other by a break of a hydrogen bond. Specifically water is separated out at the interface or near the interface, and then adhesion is reduced due to the water present.

公开(公告)号：US20170338250A1

公开(公告)日：2017-11-23

申请号：US15596412

申请日：2017-05-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junpei YANAKA ,  Kayo KUMAKURA ,  Masataka SATO ,  Satoru IDOJIRI ,  Kensuke YOSHIZUMI ,  Mari TATEISHI ,  Natsuko TAKASE

IPC: H01L27/12 ,  H01L23/29 ,  H01L27/32

CPC classification number: H01L27/1225 ,  H01L23/293 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/3262 ,  H01L51/003 ,  H01L2227/323

Abstract: To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.

公开(公告)号：US20170271380A1

公开(公告)日：2017-09-21

申请号：US15454292

申请日：2017-03-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji YASUMOTO ,  Masataka SATO ,  Masakatsu OHNO ,  Hiroki ADACHI

IPC: H01L27/12 ,  H01L21/683 ,  H01L51/56 ,  H01L21/02

CPC classification number: H01L27/1266 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02252 ,  H01L21/02318 ,  H01L21/6835 ,  H01L51/56 ,  H01L2221/68395 ,  H01L2251/566

Abstract: A peeling method of one embodiment of the present invention includes a first step of forming a first insulating layer over a substrate; a second step of forming a second insulating layer over the first insulating layer; a third step of forming a peeling layer over the second insulating layer; a fourth step of performing plasma treatment on a surface of the peeling layer; a fifth step of forming a third insulating layer over the peeling layer; a sixth step of performing heat treatment; and a seventh step of separating the peeling layer and the third insulating layer from each other. The first insulating layer and the third insulating layer each have a function of blocking hydrogen and for example, include a silicon nitride film or the like. The second insulating layer has a function of releasing hydrogen by heating and for example, includes a silicon oxide film.

公开(公告)号：US20180047902A1

公开(公告)日：2018-02-15

申请号：US15728575

申请日：2017-10-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji YASUMOTO ,  Masataka SATO ,  Masafumi NOMURA ,  Toshiyuki MIYAMOTO

IPC: H01L51/00

CPC classification number: H01L51/003 ,  H01L2251/5338

Abstract: A method for manufacturing a flexible semiconductor device is disclosed. The method includes: forming a separation layer of a metal over a substrate; treating the separation layer with plasma under an atmosphere containing nitrogen, oxygen, silicon, and hydrogen; forming a layer over the plasma-treated separation layer, the layer being capable of supplying hydrogen and nitrogen to the separation layer; forming a functional layer over the separation layer; performing heat treatment to promote the release of hydrogen and nitrogen from the layer; and separating the substrate at the separation layer. The method allows the formation of an extremely thin oxide layer over the separation layer, which facilitates the separation, reduces the probability that the oxide layer remains under the layer, and contributes to the increase in efficiency of a device included in the functional layer.

公开(公告)号：US20230260778A1

公开(公告)日：2023-08-17

申请号：US18137553

申请日：2023-04-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masataka SATO ,  Satoru IDOJIRI ,  Natsuko TAKASE

IPC: H01L21/02 ,  H01L21/304 ,  H01L21/306

CPC classification number: H01L21/02041 ,  H01L21/304 ,  H01L21/30604 ,  B23K26/38

Abstract: A glass substrate is reused. The mass productivity of a semiconductor device is increased. A glass substrate one surface of which includes a first material and a second material. The first material includes one or both of a metal and a metal oxide. The second material includes one or both of a resin and a decomposition product of a resin. A cleaning method of a glass substrate, which includes a step of preparing the glass substrate one surface of which includes a first material and a second material and a step of exposing the first material by removing at least part of the second material.

公开(公告)号：US20210020668A1

公开(公告)日：2021-01-21

申请号：US16983394

申请日：2020-08-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masataka SATO ,  Masakatsu OHNO ,  Seiji YASUMOTO ,  Hiroki ADACHI

IPC: H01L27/12 ,  B23K26/351 ,  H01L51/00 ,  H01L51/56

Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

公开(公告)号：US20200243371A1

公开(公告)日：2020-07-30

申请号：US16850185

申请日：2020-04-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji YASUMOTO ,  Masataka SATO ,  Shingo EGUCHI ,  Kunihiko SUZUKI

IPC: H01L21/683 ,  H01L51/00 ,  H01L21/67 ,  H01L51/50 ,  B32B38/10

Abstract: To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer.