公开(公告)号：US20160111053A1

公开(公告)日：2016-04-21

申请号：US14978390

申请日：2015-12-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro WATANABE ,  Takuya HANDA

IPC: G09G3/36 ,  G09G3/32 ,  H01L27/12

CPC classification number: G09G3/3648 ,  G09G3/3225 ,  G09G2300/0439 ,  G09G2310/08 ,  H01L27/1225 ,  H01L27/124

Abstract: A highly reliable semiconductor device that includes a transistor including an oxide semiconductor, which can display a high-definition image and can be manufactured with a high yield. The semiconductor device includes a pixel portion including a plurality of pixels, a gate signal line driver circuit portion, and a source signal line driver circuit portion including a first circuit that controls timing of sampling video signals and a second circuit that samples the video signals in accordance with the timing and then inputs the sampled video signals to the pixels. The second circuit includes a plurality of transistors in each of which an oxide semiconductor stacked layer is used as a channel formation region, the first circuit and the second circuit are electrically connected to each other by a wiring, and the wiring is electrically connected to gates of at least two transistors of the plurality of transistors.

公开(公告)号：US20160079433A1

公开(公告)日：2016-03-17

申请号：US14948652

申请日：2015-11-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Takuya HANDA ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/78606

Abstract: To provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and has high reliability. To provide a method for manufacturing the semiconductor device. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, an oxide semiconductor film formed over the gate insulating film, a source electrode and a drain electrode formed over the oxide semiconductor film, and a protective film. The protective film includes a metal oxide film, and the metal oxide film has a film density of higher than or equal to 3.2 g/cm3.

公开(公告)号：US20140034945A1

公开(公告)日：2014-02-06

申请号：US13953316

申请日：2013-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime TOKUNAGA ,  Takuya HANDA

IPC: H01L29/24 ,  H01L21/02

CPC classification number: H01L29/78696 ,  G02F1/1368 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/14616 ,  H01L27/14632 ,  H01L27/14687 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

Abstract translation: 提供具有几乎不变化的晶体管特性并包括氧化物半导体的半导体器件。 半导体器件包括绝缘膜上的导电膜上的绝缘膜和氧化物半导体膜。 氧化物半导体膜包括第一氧化物半导体层，第一氧化物半导体层上的第二氧化物半导体层，以及在第二氧化物半导体层上的第三氧化物半导体层。 第二氧化物半导体层的导带的底部的能级低于第一和第三氧化物半导体层的能级。 第二氧化物半导体层的端部位于比第一氧化物半导体层的端部更靠内侧。

公开(公告)号：US20180040722A1

公开(公告)日：2018-02-08

申请号：US15664353

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshimitsu OBONAI ,  Hironobu TAKAHASHI ,  Yasuharu HOSAKA ,  Masahiro WATANABE ,  Takuya HANDA ,  Yukinori SHIMA ,  Takashi HAMOCHI

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02359 ,  H01L21/02554 ,  H01L21/02631 ,  H01L21/6719 ,  H01L29/78648 ,  H01L29/7869

Abstract: Provided is a semiconductor device with favorable electrical characteristics. Provided is a semiconductor device with stable electrical characteristics. Provided is a manufacturing method of a semiconductor device with a high yield. The manufacturing method includes a first step of forming an insulating film over a substrate, a second step of transferring the substrate in an atmospheric atmosphere, a third step of heating the insulating film, and a fourth step of forming a metal oxide film. The third step and the fourth step are successively performed in an atmosphere where water vapor partial pressure is lower than water vapor partial pressure in the atmospheric air.

公开(公告)号：US20180025905A1

公开(公告)日：2018-01-25

申请号：US15654105

申请日：2017-07-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasutaka NAKAZAWA ,  Takuya HANDA ,  Masahiro WATANABE

IPC: H01L21/02 ,  H01L27/04 ,  H01L51/52 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L21/02104 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/04 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L51/5203 ,  H01L2251/303

Abstract: A semiconductor device having favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a metal oxide. The semiconductor device includes a gate electrode, a first insulating film over the gate electrode, the metal oxide over the first insulating film, a pair of electrodes over the metal oxide, and a second insulating film in contact with the metal oxide. The metal oxide includes a first metal oxide and a second metal oxide in contact with a top surface of the first metal oxide. The first metal oxide and the second metal oxide each contain In, an element M (M is gallium, aluminum, silicon, or the like), and Zn. The first metal oxide includes a region having lower crystallinity than the second metal oxide. The second insulating film includes a region whose thickness is smaller than that of the second metal oxide.

公开(公告)号：US20170250204A1

公开(公告)日：2017-08-31

申请号：US15594813

申请日：2017-05-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Mitsuo MASHIYAMA ,  Takuya HANDA ,  Masahiro WATANABE ,  Hajime TOKUNAGA

IPC: H01L27/12 ,  H01L21/316 ,  H01L29/24 ,  G02F1/1368 ,  H01L27/105 ,  H01L29/786 ,  H01L51/50

CPC classification number: H01L27/1248 ,  G02F1/1368 ,  H01L21/70 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/50

Abstract: Stable electrical characteristics of a transistor including an oxide semiconductor layer are achieved. A highly reliable semiconductor device including the transistor is provided. The semiconductor device includes a multilayer film formed of an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the oxide layer, and a gate electrode overlapping with the multilayer film with the gate insulating film interposed therebetween. The oxide layer contains a common element to the oxide semiconductor layer and has a large energy gap than the oxide semiconductor layer. The composition between the oxide layer and the oxide semiconductor layer gradually changes.

公开(公告)号：US20150380364A1

公开(公告)日：2015-12-31

申请号：US14847461

申请日：2015-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Takuya HANDA ,  Kenichi OKAZAKI

IPC: H01L23/00 ,  H01L29/786

CPC classification number: H01L23/564 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal oxide layer is in contact with an interlayer insulating layer covering a transistor, and has a stacked-layer structure including a first metal oxide layer having an amorphous structure and a second metal oxide layer having a polycrystalline structure. In the first metal oxide layer, there are no crystal grain boundaries, and grid intervals are wide as compared to those in a metal oxide layer in a crystalline state; thus, the first metal oxide layer easily traps moisture between the lattices. In the second metal oxide layer having a polycrystalline structure, crystal parts other than crystal grain boundary portions have dense structures and extremely low moisture permeability. Thus, the structure in which the metal oxide layer including the first metal oxide layer and the second metal oxide layer is in contact with the interlayer insulating layer can effectively prevent moisture permeation into the transistor.

Abstract translation: 金属氧化物层与覆盖晶体管的层间绝缘层接触，并且具有包括具有非晶结构的第一金属氧化物层和具有多晶结构的第二金属氧化物层的层叠结构。 在第一金属氧化物层中，与结晶状态的金属氧化物层相比，不存在晶粒边界，栅格间隔宽， 因此，第一金属氧化物层容易捕获晶格之间的水分。 在具有多晶结构的第二金属氧化物层中，除了晶界部分之外的晶体部分具有致密的结构和极低的透湿性。 因此，包括第一金属氧化物层和第二金属氧化物层的金属氧化物层与层间绝缘层接触的结构可以有效地防止水分渗入晶体管。