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    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    3.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号：US20160079089A1

    公开(公告)日：2016-03-17

    申请号：US14849852

    申请日：2015-09-10

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Junichi KOEZUKA ,  Daisuke KUROSAKI ,  Yukinori SHIMA ,  Takuya HANDA

    IPC: H01L21/477 ,  H01L21/02

    CPC classification number: H01L21/477 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02631 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693

    Abstract: In a semiconductor device including an oxide semiconductor, a change in electrical characteristics is inhibited and reliability is improved. The semiconductor device is manufactured by a method including first to fourth steps. The first step includes a step of forming an oxide semiconductor film, the second step includes a step of forming an oxide insulating film over the oxide semiconductor film, the third step includes a step of forming a protective film over the oxide insulating film, and the fourth step includes a step of adding oxygen to the oxide insulating film through the protective film. In the first step, the oxide semiconductor film is formed under a condition in which an oxygen vacancy is formed. The oxygen from the oxide insulating film fills the oxygen vacancy after the fourth step.

    Abstract translation: 在包括氧化物半导体的半导体器件中，电特性的变化被抑制，可靠性提高。 半导体器件通过包括第一至第四步骤的方法制造。 第一步骤包括形成氧化物半导体膜的步骤，第二步骤包括在氧化物半导体膜上形成氧化物绝缘膜的步骤，第三步骤包括在氧化物绝缘膜上形成保护膜的步骤， 第四步骤包括通过保护膜向氧化物绝缘膜添加氧的步骤。 在第一步骤中，在形成氧空位的条件下形成氧化物半导体膜。 来自氧化物绝缘膜的氧填充第四步后的氧空位。

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140326997A1

    公开(公告)日：2014-11-06

    申请号：US14334079

    申请日：2014-07-17

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro WATANABE ,  Takuya HANDA

    IPC: H01L27/12

    CPC classification number: G09G3/3648 ,  G09G3/3225 ,  G09G2300/0439 ,  G09G2310/08 ,  H01L27/1225 ,  H01L27/124

    Abstract: A highly reliable semiconductor device that includes a transistor including an oxide semiconductor, which can display a high-definition image and can be manufactured with a high yield. The semiconductor device includes a pixel portion including a plurality of pixels, a gate signal line driver circuit portion, and a source signal line driver circuit portion including a first circuit that controls timing of sampling video signals and a second circuit that samples the video signals in accordance with the timing and then inputs the sampled video signals to the pixels. The second circuit includes a plurality of transistors in each of which an oxide semiconductor stacked layer is used as a channel formation region, the first circuit and the second circuit are electrically connected to each other by a wiring, and the wiring is electrically connected to gates of at least two transistors of the plurality of transistors.

    Abstract translation: 一种高度可靠的半导体器件，其包括可以显示高清晰度图像并且可以以高产率制造的包括氧化物半导体的晶体管。 该半导体器件包括包括多个像素的像素部分，栅极信号线驱动器电路部分和源极信号线驱动器电路部分，该源极信号线驱动器电路部分包括控制采样视频信号的定时的第一电路和将视频信号采样的第二电路 根据定时，然后将采样的视频信号输入到像素。 第二电路包括多个晶体管，其中每个晶体管使用氧化物半导体层叠层作为沟道形成区域，第一电路和第二电路通过布线彼此电连接，并且布线电连接到栅极 的多个晶体管中的至少两个晶体管。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20150115262A1

    公开(公告)日：2015-04-30

    申请号：US14585904

    申请日：2014-12-30

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hajime TOKUNAGA ,  Takuya HANDA

    IPC: H01L29/786 ,  H01L29/24

    CPC classification number: H01L29/78696 ,  G02F1/1368 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/14616 ,  H01L27/14632 ,  H01L27/14687 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

    Abstract: To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

    Abstract translation: 提供具有几乎不变化的晶体管特性并包括氧化物半导体的半导体器件。 半导体器件包括绝缘膜上的导电膜上的绝缘膜和氧化物半导体膜。 氧化物半导体膜包括第一氧化物半导体层，第一氧化物半导体层上的第二氧化物半导体层，以及在第二氧化物半导体层上的第三氧化物半导体层。 第二氧化物半导体层的导带的底部的能级低于第一和第三氧化物半导体层的能级。 第二氧化物半导体层的端部位于比第一氧化物半导体层的端部更靠内侧。

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20130320337A1

    公开(公告)日：2013-12-05

    申请号：US13905476

    申请日：2013-05-30

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro WATANABE ,  Takuya HANDA

    IPC: H01L27/12

    CPC classification number: G09G3/3648 ,  G09G3/3225 ,  G09G2300/0439 ,  G09G2310/08 ,  H01L27/1225 ,  H01L27/124

    Abstract: A highly reliable semiconductor device that includes a transistor including an oxide semiconductor, which can display a high-definition image and can be manufactured with a high yield. The semiconductor device includes a pixel portion including a plurality of pixels, a gate signal line driver circuit portion, and a source signal line driver circuit portion including a first circuit that controls timing of sampling video signals and a second circuit that samples the video signals in accordance with the timing and then inputs the sampled video signals to the pixels. The second circuit includes a plurality of transistors in each of which an oxide semiconductor stacked layer is used as a channel formation region, the first circuit and the second circuit are electrically connected to each other by a wiring, and the wiring is electrically connected to gates of at least two transistors of the plurality of transistors.

    Abstract translation: 一种高度可靠的半导体器件，其包括可以显示高清晰度图像并且可以以高产率制造的包括氧化物半导体的晶体管。 该半导体器件包括包括多个像素的像素部分，栅极信号线驱动器电路部分和源极信号线驱动器电路部分，该源极信号线驱动器电路部分包括控制采样视频信号的定时的第一电路和将视频信号采样的第二电路 根据定时，然后将采样的视频信号输入到像素。 第二电路包括多个晶体管，其中每个晶体管使用氧化物半导体层叠层作为沟道形成区域，第一电路和第二电路通过布线彼此电连接，并且布线电连接到栅极 的多个晶体管中的至少两个晶体管。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    8.
    发明公开
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240170555A1

    公开(公告)日：2024-05-23

    申请号：US18284681

    申请日：2022-04-04

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Yukinori SHIMA ,  Takuya HANDA

    IPC: H01L29/49 ,  H01L29/786

    CPC classification number: H01L29/4908 ,  H01L29/7869

    Abstract: A semiconductor device with favorable electrical characteristics is to be provided. A semiconductor device with high reliability is to be provided. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first semiconductor layer, a first insulating layer, a second insulating layer, and a first gate electrode that are stacked in this order. The first gate electrode includes a region overlapping with the first semiconductor layer. The second transistor includes a second semiconductor layer, a second insulating layer, and a second gate electrode that are stacked in this order. The second gate electrode includes a region overlapping with the second semiconductor layer.

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