公开(公告)号：US10361222B2

公开(公告)日：2019-07-23

申请号：US15897318

申请日：2018-02-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC: H04L27/12 ,  H01L27/12 ,  H01L21/3213 ,  H01L21/02 ,  B23K26/073 ,  H01L21/20 ,  H01L21/84 ,  H01L29/66 ,  H01L29/786

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

公开(公告)号：US10263059B2

公开(公告)日：2019-04-16

申请号：US15907334

申请日：2018-02-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/786

Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

公开(公告)号：US20180254311A1

公开(公告)日：2018-09-06

申请号：US15907334

申请日：2018-02-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

公开(公告)号：US09997543B2

公开(公告)日：2018-06-12

申请号：US15153127

申请日：2016-05-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Arao

IPC: H01L21/00 ,  H01L27/12 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H01L27/088 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/324 ,  H01L27/32

CPC classification number: H01L27/124 ,  G02F1/1339 ,  G02F1/13392 ,  G02F1/13394 ,  G02F1/1341 ,  G02F1/134309 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  H01L21/324 ,  H01L27/088 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/127 ,  H01L27/3244 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/7842 ,  H01L29/7845 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There has been a case where peeling occurs if an internal stress of a wiring of a TFT is strong. In particular, the internal stress of a gate electrode largely influences a stress that a semiconductor film receives, and there has been a case where the internal stress becomes a cause of reduction in electric characteristics of a TFT depending on the internal stress. According to the present invention, an impurity element is introduced into a wiring, or both the introduction of an impurity element and heat treatment are performed, whereby the wiring can be controlled to have a desired internal stress. It is effective that the present invention is particularly applied to a gate electrode. Further, it is possible that the introduction of an impurity element and the heat treatment are conducted to only a desired region to conduct control to attain a desired internal stress.

公开(公告)号：US09362273B2

公开(公告)日：2016-06-07

申请号：US13689041

申请日：2012-11-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Arao

IPC: H01L23/62 ,  H01L27/088 ,  H01L27/12 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L27/124 ,  G02F1/1339 ,  G02F1/13392 ,  G02F1/13394 ,  G02F1/1341 ,  G02F1/134309 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  H01L21/324 ,  H01L27/088 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/127 ,  H01L27/3244 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/7842 ,  H01L29/7845 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There has been a case where peeling occurs if an internal stress of a wiring of a TFT is strong. In particular, the internal stress of a gate electrode largely influences a stress that a semiconductor film receives, and there has been a case where the internal stress becomes a cause of reduction in electric characteristics of a TFT depending on the internal stress. According to the present invention, an impurity element is introduced into a wiring, or both the introduction of an impurity element and heat treatment are performed, whereby the wiring can be controlled to have a desired internal stress. It is effective that the present invention is particularly applied to a gate electrode. Further, it is possible that the introduction of an impurity element and the heat treatment are conducted to only a desired region to conduct control to attain a desired internal stress.

公开(公告)号：US08957424B2

公开(公告)日：2015-02-17

申请号：US14223366

申请日：2014-03-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koji Ono ,  Hideomi Suzawa ,  Tatsuya Arao

IPC: H01L27/14 ,  H01L33/08 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  H01L33/62

CPC classification number: H01L27/1222 ,  G02F1/13624 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L33/08 ,  H01L33/62 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor.

Abstract translation: 公开了一种电致发光器件，其具有衬底，衬底上的薄膜晶体管，薄膜晶体管上的绝缘膜，绝缘膜上的电致发光元件，电致发光元件上的钝化膜以及钝化膜上的对置衬底 。 电致发光元件被配置为通过对置基板发光，并且用填充物填充基板和对向基板之间的空间。 电致发光元件的特征在于薄膜晶体管的栅电极的锥形侧面。

公开(公告)号：US20150035033A1

公开(公告)日：2015-02-05

申请号：US14322990

申请日：2014-07-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

IPC: H01L27/32 ,  H01L27/12

CPC classification number: H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

Abstract translation: 提供一种可以防止由于泄漏或其它原因引起的栅极电压变化并且同时可以防止开口率降低的发光器件。 电容器存储器由连接布线，绝缘膜和电容布线形成。 连接布线形成在栅电极和像素的TFT的有源层上，并与有源层连接。 绝缘膜形成在连接布线上。 电容布线形成在绝缘膜上。 这种结构使得电容器存储与TFT重叠，从而在保持开口率降低的同时增加电容器存储的容量。 因此，可以避免由于泄漏或其他原因导致的栅极电压的变化，以防止OLED的亮度变化和模拟驱动中屏幕的闪烁。

公开(公告)号：US20140293207A1

公开(公告)日：2014-10-02

申请号：US14306309

申请日：2014-06-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Noriko Miyagi ,  Masayuki Sakakura ,  Tatsuya Arao ,  Ritsuko Nagao ,  Yoshifumi Tanada

IPC: G02F1/1333

CPC classification number: H01L27/124 ,  G02F1/133345 ,  G09G3/3233 ,  G09G2300/0842 ,  G09G2300/0861 ,  H01L23/5228 ,  H01L27/1222 ,  H01L27/1248 ,  H01L27/3276 ,  H01L27/3279 ,  H01L33/40 ,  H01L51/5206 ,  H01L51/5212 ,  H01L51/5221 ,  H01L51/5228 ,  H01L51/5234 ,  H01L2251/5315

Abstract: An object of the present invention is to decrease substantial resistance of an electrode such as a transparent electrode or a wiring, and furthermore, to provide a display device for which is possible to apply same voltage to light-emitting elements. In the invention, a auxiliary wiring that is formed in one layer in which a conductive film of a semiconductor element such as an electrode, wiring, a signal line, a scanning line, or a power supply line is connected to an electrode typified by a second electrode, and a wiring. It is preferable that the auxiliary wiring is formed into a conductive film to include low resistive material, especially, formed to include lower resistive material than the resistance of an electrode and a wiring that is required to reduce the resistance.

Abstract translation: 本发明的一个目的是降低诸如透明电极或布线的电极的实质电阻，此外，提供一种可以向发光元件施加相同电压的显示装置。 在本发明中，形成在电极，布线，信号线，扫描线或电源线等半导体元件的导电膜的一层中形成的辅助布线连接到以 第二电极和布线。 优选地，辅助布线形成为包括低电阻材料的导电膜，特别地，形成为包括比电阻的阻抗更低的电阻材料和降低电阻所需的布线。

公开(公告)号：US08729557B2

公开(公告)日：2014-05-20

申请号：US14027871

申请日：2013-09-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koji Ono ,  Hideomi Suzawa ,  Tatsuya Arao

IPC: H01L27/14

CPC classification number: H01L27/1222 ,  G02F1/13624 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L33/08 ,  H01L33/62 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor.

Abstract translation: 公开了一种电致发光器件，其具有衬底，衬底上的薄膜晶体管，薄膜晶体管上的绝缘膜，绝缘膜上的电致发光元件，电致发光元件上的钝化膜以及钝化膜上的对置衬底 。 电致发光元件被配置为通过对置基板发光，并且用填充物填充基板和对向基板之间的空间。 电致发光元件的特征在于薄膜晶体管的栅电极的锥形侧面。

公开(公告)号：US20140021459A1

公开(公告)日：2014-01-23

申请号：US14037437

申请日：2013-09-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

IPC: H01L27/32

CPC classification number: H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

Abstract translation: 提供一种可以防止由于泄漏或其它原因引起的栅极电压变化并且同时可以防止开口率降低的发光器件。 电容器存储器由连接布线，绝缘膜和电容布线形成。 连接布线形成在栅电极和像素的TFT的有源层上，并与有源层连接。 绝缘膜形成在连接布线上。 电容布线形成在绝缘膜上。 这种结构使得电容器存储与TFT重叠，从而在保持开口率降低的同时增加电容器存储的容量。 因此，可以避免由于泄漏或其他原因导致的栅极电压的变化，以防止OLED的亮度变化和模拟驱动中屏幕的闪烁。