摘要:
A plasma display panel with improved brightness and reduced discharge voltage is disclosed. The plasma display panel comprises an upper panel and a lower panel facing each other through barrier ribs wherein a first dielectric layer is formed on the upper panel and second dielectric layers containing a black pigment are formed by patterning on the first dielectric layer.
摘要:
A method for manufacturing a plasma display panel is disclosed. In the plasma display panel including upper and lower panels bonded to face each other with barrier ribs therebetween, at least one of electrodes formed on the upper and lower panels has a ratio of width to thickness in a range of 5:1˜50:1.
摘要:
A black top green sheet, a plasma display panel, and a method for manufacturing the same, in which black tops made of a photosensitive substance are formed, to improve the contrast of the plasma display panel, reduce the production costs of the plasma display panel, and simplify a process for manufacturing the plasma display panel. The method includes forming a barrier rib material on a lower plate, on which address electrodes and a dielectric are provided; forming a black top material comprising a photosensitive substance on the barrier rib material; patterning the black top material to form black tops; and patterning the barrier rib material using the black tops as a mask to form barrier ribs.
摘要:
A green sheet, and a method for manufacturing a plasma display panel are provided. The sheet comprises a base film; a dielectric dry film formed on the base film, and comprising a glass powder, a polymer binder of 15 wt % to 30 wt %, and a plasticizer of 1.5 wt % to 3 wt %; and a cover film formed on the dielectric dry film.
摘要:
The present invention provides a nitride semiconductor light-emitting device comprising a first conductive nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer, and having at least one quantum well layer and at least one quantum barrier layer alternatively laminated; and a second conductive nitride semiconductor layer formed on the active layer, wherein at least one of the quantum well layer and quantum barrier layer in the active layer is doped with elemental Al in a concentration of less than 1%.
摘要:
Disclosed herein is a method of laterally growing GaN with In doping, which enables formation of a GaN layer in a shorter period of time by increasing a lateral growth rate of GaN with the In doping when laterally growing GaN with the LEO method. The method comprises the steps of preparing a substrate for growing GaN, growing a GaN epitaxial layer on the substrate, forming a mask on the GaN epitaxial layer so that a predetermined portion of the GaN epitaxial layer is exposed, and overgrowing GaN to a predetermined thickness by doping a predetermined amount of In. When laterally growing the GaN layers with the LEO method, a lateral growth rate of GaN can be increased by the In doping, so that the manufacturing time can be shortened and the productivity can be enhanced.
摘要:
Disclosed is an electro-absorption optical modulator using a semiconductor device. The optical modulator makes use of a change in light absorption caused by displacement of an absorption curve depending on a bias voltage applied to the device. Here, a level of the light absorption depending on the bias voltage is expressed as a transfer function of output light to the applied bias, and the transfer function has a non-linear profile due to a characteristic of a material. Unlike signal modulation of a digital optical communication system, an analog optical transmission system can be subjected to deterioration in performance, because the non-linear characteristic of the transfer function for the optical modulator generates signal distortion when an electrical signal is converted into an optical signal. The typical optical modulator has an absorption layer constituted of quantum wells having the same width. However, the inventive optical modulator has the absorption layer formed by the combination of quantum wells having a width different form each other, thus having excellent linearity.
摘要:
A three dimensional parallax drawing system for use in three dimensional graphics or virtual reality is disclosed. The parallax drawing system includes a three dimensional address generator which generates the original X-axis, Y-axis and Z-axis addresses of an image, and an address correction circuit for producing a corrected X-axis address in response to the original X-axis and Z-axis address outputs from the address generator. Also included is an address selection circuit for selecting either the original X-axis address supplied from the three dimensional address generator or the corrected X-axis address from the address correction circuit as a resultant X-axis address in response to a stereo graphic mode request signal. A frame buffer address generator is provided for converting the resultant X-axis address received from the address selection means and the Y-axis address received from the three dimensional address generator into the frame buffer linear address. The X-axis parallax of human eyes relative to all points of an object can be converted into the X-axis addresses. Thus, once the 3-D image of the object is projected by separating the left and right eyes' views and reflecting the corrected X-axis addresses, a more vivid image having a better perspective of distance can be seen though the LCD shutters.
摘要:
In an apparatus and method for providing transmit (Tx) diversity in a multi-antenna wireless communication system, Tx diversity is provided by estimating a channel to each antenna using a signal received from the antenna, estimating channel state information (CSI) from the first Tx node to each antenna using the estimated channel, and determining a signal to be transmitted to the antennas in different methods according to whether phase compensation is required for information to be transmitted using the estimated channel and the CSI.
摘要:
Provided is an electrochemical device comprising multi-stacked unit cells of full cells or bicells and a separation film disposed therebetween, whereby the separation film and separators are alternately stacked between electrode layers with an opposite polarity. Herein, as the separation film is formed of a material having a higher thermal shrinkage rate than that of the separator, the thermal stability of the device can be secured by stable induction of shutdown via thermal behavior of the separation film, without causing short-circuiting due to thermal shrinkage of the separator even when a temperature of a battery suddenly rises by internal or external factors.