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公开(公告)号：US20050263783A1
公开(公告)日：2005-12-01
申请号：US10944745
申请日：2004-09-21
摘要： The present invention provides a nitride semiconductor light-emitting device comprising a first conductive nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer, and having at least one quantum well layer and at least one quantum barrier layer alternatively laminated; and a second conductive nitride semiconductor layer formed on the active layer, wherein at least one of the quantum well layer and quantum barrier layer in the active layer is doped with elemental Al in a concentration of less than 1%.
摘要翻译： 本发明提供了一种氮化物半导体发光器件，其包括第一导电氮化物半导体层; 形成在所述第一导电氮化物半导体层上并且具有至少一个量子阱层和至少一个量子势垒层交替叠层的有源层; 以及形成在有源层上的第二导电氮化物半导体层，其中有源层中的量子阱层和量子势垒层中的至少一个掺杂有浓度小于1％的元素Al。
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2.发明申请Gallium nitride semiconductor light emitting device and method of manufacturing the same 审中-公开氮化镓半导体发光器件及其制造方法公开(公告)号：US20050139818A1
公开(公告)日：2005-06-30
申请号：US10843594
申请日：2004-05-12
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/12
摘要： Disclosed herein are a gallium nitride semiconductor LED (light emitting device) and a method of manufacturing the same, which reduces defects, such as Ga vacancies and dislocations caused by lattice mismatching, with Al doping, so that electrical and an optical properties are enhanced. The gallium nitride semiconductor LED comprises a substrate for growing a GaN semiconductor material, an n-type GaN clad layer formed on the substrate and doped with Al, an active layer having a quantum well structure formed on the n-type GaN clad layer, and a p-type GaN clad layer formed on the active layer. By the above method, good quality crystal growth is ensured with a low cost and the GaN semiconductor LED of excellent electrical and optical properties is provided.
摘要翻译： 本文公开了一种氮化镓半导体LED（发光器件）及其制造方法，其通过Al掺杂减少诸如Ga空位和由晶格失配引起的位错的缺陷，从而提高了电学和光学性能。 氮化镓半导体LED包括用于生长GaN半导体材料的衬底，在衬底上形成并掺杂有Al的n型GaN覆层，在n型GaN覆层上形成有量子阱结构的有源层，以及 形成在有源层上的p型GaN覆层。 通过上述方法，以低成本确保了优质的晶体生长，并且提供了优异的电气和光学特性的GaN半导体LED。
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3.发明申请公开(公告)号：US20060215256A1
公开(公告)日：2006-09-28
申请号：US11443376
申请日：2006-05-31
IPC分类号： H01S3/00
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/12
摘要： A gallium nitride semiconductor LED includes a substrate for growing a GaN semiconductor material, an n-type GaN clad layer formed on the substrate and doped with Al, an active layer having a quantum well structure formed on the n-type GaN clad layer, and a p-type GaN clad layer formed on the active layer.
摘要翻译： 氮化镓半导体LED包括用于生长GaN半导体材料的衬底，在衬底上形成并掺杂有Al的n型GaN覆层，在n型GaN覆层上形成的具有量子阱结构的有源层，以及 形成在有源层上的p型GaN覆层。
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公开(公告)号：US20070085097A1
公开(公告)日：2007-04-19
申请号：US11581335
申请日：2006-10-17
IPC分类号： H01L33/00
摘要： The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
摘要翻译： 本发明提供了一种改进了静电放电耐受电压的高度可靠的氮化物半导体发光器件。 在发光器件中，在衬底上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层。 有源层具有包括多个多量子势垒层和量子阱层的多量子阱结构。 至少一个量子势垒层具有带隙调制多层结构。
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公开(公告)号：US20070059440A1
公开(公告)日：2007-03-15
申请号：US11519203
申请日：2006-09-12
申请人： Dae Park , Kyung Kim , Byung Seo , Min Park , Won Jeon , Dong Shin , Deok Park , Hong Lee , Je Kim , Byung Ryu
发明人： Dae Park , Kyung Kim , Byung Seo , Min Park , Won Jeon , Dong Shin , Deok Park , Hong Lee , Je Kim , Byung Ryu
CPC分类号： C23C26/00 , H01J9/02 , H01J2217/49207
摘要： A method for manufacturing a plasma display panel is disclosed. The plasma display panel manufacturing method includes forming an electrode material on a dielectric sheet, and transcribing the dielectric sheet and electrode material on a substrate simultaneously.
摘要翻译： 公开了一种制造等离子体显示面板的方法。 等离子体显示面板的制造方法包括在电介质片上形成电极材料，同时将基片和电极材料转印在基片上。
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6.发明申请Dielectric sheet, plasma display panel using the same, and manufacturing method therefor 失效电介质片，使用其的等离子体显示面板及其制造方法公开(公告)号：US20070013311A1
公开(公告)日：2007-01-18
申请号：US11482196
申请日：2006-07-07
IPC分类号： H01J17/49
摘要： A dielectric sheet having two layers made of different materials for forming a differential dielectric sheet on a plasma display panel, a plasma display panel using the same, and a manufacturing method therefor.
摘要翻译： 具有由等离子体显示面板上形成差分电介质的不同材料制成的两层的电介质片，使用其的等离子体显示面板及其制造方法。
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7.发明申请公开(公告)号：US20060038955A1
公开(公告)日：2006-02-23
申请号：US11206844
申请日：2005-08-19
IPC分类号： G02F1/1333
CPC分类号： H01J9/02 , H01J11/10 , H01J11/22 , H01J2211/444 , Y10T29/49124 , Y10T428/24
摘要： Provided are a sheet for manufacturing a plasma display apparatus, and a method for manufacturing the plasma display apparatus. The sheet includes a base film; a photoresist layer formed on the base film; an electrode material layer formed on the photoresist layer; and a cover film formed on the electrode material layer.
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8.发明申请Gallium nitride-based semiconductor light-emitting device and method of fabricatiing the same 审中-公开氮化镓系半导体发光元件及其制造方法公开(公告)号：US20050269583A1
公开(公告)日：2005-12-08
申请号：US10899035
申请日：2004-07-27
摘要： This invention pertains to a gallium nitride-based semiconductor light-emitting device, in which nano-sized, fine protrusions are formed on an upper surface of a p-type clad layer without a deterioration of crystallinity and electric conductivity to improve light extraction efficiency, and a method of fabricating the same. After a first conductive gallium nitride-based semiconductor layer and an active layer are grown on a substrate under typical growth conditions, a second conductive gallium nitride-based semiconductor layer is grown on a polarity conversion layer containing a MgN-based single crystal and formed on the active layer, so that a polarity of the second conductive gallium nitride-based semiconductor layer is converted into an N polarity, thereby roughing a surface thereof.
摘要翻译： 本发明涉及一种氮化镓基半导体发光器件，其中在p型覆层的上表面上形成纳米尺寸的微细突起，而不会导致结晶性和导电性的劣化，从而提高光提取效率， 及其制造方法。 在典型的生长条件下在第一导电氮化镓基半导体层和有源层生长在衬底上之后，在包含MgN基单晶的极性转换层上生长第二导电氮化镓基半导体层，并形成在 有源层，使得第二导电氮化镓系半导体层的极性转换为N极性，从而粗糙化其表面。
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公开(公告)号：US20050224824A1
公开(公告)日：2005-10-13
申请号：US10911562
申请日：2004-08-05
IPC分类号： H01L21/205 , H01L29/22 , H01L33/12 , H01L33/32
摘要： Provided is a gallium nitride-based semiconductor light-emitting device comprising a sapphire substrate having a nitridated upper surface; a polarity conversion layer formed on the sapphire substrate and made of MgN-based single crystals; a first conductive gallium nitride-based semiconductor layer formed on the polarity conversion layer; an active layer formed on the first conductive gallium nitride-based semiconductor layer; and a second conductive gallium nitride-based semiconductor layer formed on the active layer.
摘要翻译： 提供一种氮化镓系半导体发光元件，其包含具有氮化上表面的蓝宝石衬底; 在蓝宝石衬底上形成的由MgN基单晶构成的极性转换层; 形成在极性转换层上的第一导电氮化镓基半导体层; 形成在第一导电氮化镓基半导体层上的有源层; 以及形成在有源层上的第二导电氮化镓基半导体层。
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10.发明申请Green sheet for black layers, plasma display panels using the green sheet and methods for fabricating the plasma display panels 审中-公开用于黑色层的绿色片材，使用生片的等离子体显示面板和用于制造等离子体显示面板的方法公开(公告)号：US20070103075A1
公开(公告)日：2007-05-10
申请号：US11593634
申请日：2006-11-07
IPC分类号： H01J17/49
CPC分类号： H01J11/44 , H01J9/02 , H01J9/2278 , H01J9/242 , H01J11/12 , H01J2211/36 , H01J2211/38 , H01J2211/444
摘要： A plasma display panel with improved brightness and reduced discharge voltage is disclosed. The plasma display panel comprises an upper panel and a lower panel facing each other through barrier ribs wherein a first dielectric layer is formed on the upper panel and second dielectric layers containing a black pigment are formed by patterning on the first dielectric layer.
摘要翻译： 公开了一种具有改善的亮度和降低的放电电压的等离子体显示面板。 等离子体显示面板包括通过障壁彼此面对的上面板和下面板，其中第一介电层形成在上面板上，并且包含黑色颜料的第二介电层通过图案化形成在第一介电层上。
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