公开(公告)号：US5604649A

公开(公告)日：1997-02-18

申请号：US670039

申请日：1996-06-25

申请人： Manuel A. Hernandez

发明人： Manuel A. Hernandez

IPC分类号： G11B5/49 ,  G11B5/48 ,  G11B21/02 ,  G11B21/16

CPC分类号： G11B5/4833

摘要： The improved disk drive system has an improved head gimbal assembly having a mounting plate with an attachment portion for attachment to an actuator arm and a distal end for mounting the read/write heads, or load beam assemblies, thereto. The mounting portion and distal end of the mounting plate are vertically offset such that when the attachment portion is attached to the actuator arm, the distal end of the mounting plate is centered between opposing sides of adjacent disks, thereby permitting a smaller spacing between adjacent disks. The new swage type connection between the mounting plate and the actuator arm has a hole in the actuator arm and has a spud located on the attachment portion of the mounting plate. The spud has a cylinder having an outer diameter such that the cylinder can fit inside the actuator arm hole. A distal end of the cylinder has a lip protruding inwardly from an inside diameter of the cylinder. The cylinder has a length such that when the cylinder is inserted into the actuator arm hole, the lip and the distal end of the cylinder extend beyond the thickness of the actuator arm around the actuator arm hole so that when the spud is swaged while in the actuator arm hole, the lip and the distal end of the cylinder expand into an area outside the actuator arm hole.

摘要翻译： 改进的磁盘驱动器系统具有改进的磁头万向架组件，其具有安装板，该安装板具有用于附接到致动器臂的附接部分和用于将读/写头或负载梁组件安装到其上的远端。 安装板的安装部分和远端垂直偏移，使得当附接部分附接到致动器臂时，安装板的远端在相邻盘的相对侧之间居中，从而允许相邻盘之间的间隔更小 。 安装板和致动器臂之间的新的型锻型连接件在致动器臂中具有一个孔，并且具有位于安装板的附接部分上的定位销。 喷嘴具有具有外径的圆筒，使得圆筒可以装配在致动器臂孔内。 气缸的远端具有从气缸的内径向内突出的唇部。 气缸具有这样的长度，使得当气缸插入致动器臂孔中时，气缸和气缸的远端延伸超过致动器臂的致动器臂孔周围的厚度，使得当在第 执行器臂孔，唇缘和气缸的远端扩展到致动器臂孔外部的区域。

公开(公告)号：US08404583B2

公开(公告)日：2013-03-26

申请号：US13035034

申请日：2011-02-25

申请人： Zhong Qiang Hua ,  Manuel A. Hernandez ,  Lei Luo ,  Kedar Sapre

发明人： Zhong Qiang Hua ,  Manuel A. Hernandez ,  Lei Luo ,  Kedar Sapre

IPC分类号： H01L21/44 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76898

摘要： A method for improving conformality of oxide layers along sidewalls of vias in semiconductor substrates includes forming a nitride layer over an upper surface of a semiconductor substrate and forming a via extending through the nitride layer and into the semiconductor substrate. The via may have a depth of at least about 50 μm from a top surface of the nitride layer and an opening of less than about 10 μm at the top surface of the nitride layer. The method also includes forming an oxide layer over the nitride layer and along sidewalls and bottom of the via. The oxide layer may be formed using a thermal chemical vapor deposition (CVD) process at a temperature of less than about 450° C., where a thickness of the oxide layer at the bottom of the via is at least about 50% of a thickness of the oxide layer at the top surface of the nitride layer.

摘要翻译： 在半导体衬底中的通孔侧壁改善氧化物层的保形性的方法包括在半导体衬底的上表面上形成氮化物层，并形成延伸穿过氮化物层并进入半导体衬底的通孔。 通孔可以具有距离氮化物层的顶表面至少约50μm的深度和在氮化物层的顶表面处的小于约10μm的开口。 该方法还包括在氮化物层上并沿着通孔的侧壁和底部形成氧化物层。 可以在小于约450℃的温度下使用热化学气相沉积（CVD）工艺形成氧化物层，其中通孔底部的氧化物层的厚度为厚度的至少约50％ 在氮化物层的顶表面处的氧化物层。

公开(公告)号：US20110223760A1

公开(公告)日：2011-09-15

申请号：US13035034

申请日：2011-02-25

申请人： Zhong Qiang Hua ,  Manuel A. Hernandez ,  Lei Luo ,  Kedar Sapre

发明人： Zhong Qiang Hua ,  Manuel A. Hernandez ,  Lei Luo ,  Kedar Sapre

IPC分类号： H01L21/768

CPC分类号： H01L21/76898

摘要： A method for improving conformality of oxide layers along sidewalls of vias in semiconductor substrates includes forming a nitride layer over an upper surface of a semiconductor substrate and forming a via extending through the nitride layer and into the semiconductor substrate. The via may have a depth of at least about 50 μm from a top surface of the nitride layer and an opening of less than about 10 μm at the top surface of the nitride layer. The method also includes forming an oxide layer over the nitride layer and along sidewalls and bottom of the via. The oxide layer may be formed using a thermal chemical vapor deposition (CVD) process at a temperature of less than about 450° C., where a thickness of the oxide layer at the bottom of the via is at least about 50% of a thickness of the oxide layer at the top surface of the nitride layer.

摘要翻译： 在半导体衬底中的通孔侧壁改善氧化物层的保形性的方法包括在半导体衬底的上表面上形成氮化物层，并形成延伸穿过氮化物层并进入半导体衬底的通孔。 通孔可以具有距离氮化物层的顶表面至少约50μm的深度和在氮化物层的顶表面处的小于约10μm的开口。 该方法还包括在氮化物层上并沿着通孔的侧壁和底部形成氧化物层。 可以在小于约450℃的温度下使用热化学气相沉积（CVD）工艺形成氧化物层，其中通孔底部的氧化物层的厚度为厚度的至少约50％ 在氮化物层的顶表面处的氧化物层。

公开(公告)号：US20100006032A1

公开(公告)日：2010-01-14

申请号：US12501195

申请日：2009-07-10

申请人： Kimberly Hinckley ,  Yizhen Zhang ,  Manuel A. Hernandez ,  Won B. Bang ,  Dmitry Lubomirsky

发明人： Kimberly Hinckley ,  Yizhen Zhang ,  Manuel A. Hernandez ,  Won B. Bang ,  Dmitry Lubomirsky

IPC分类号： C23C16/00

CPC分类号： C23C16/452 ,  C23C16/4481 ,  C23C16/45512 ,  C23C16/45591

摘要： Apparatus for use with a processing chamber are provided. In one aspect a blocker plate is provided including an annular plate having an inner portion of a first thickness and the annular plate having an aperture pattern including a center portion, a first patterned portion concentrically disposed around the center portion and comprising a first plurality of apertures having a first number of apertures, an second patterned portion concentrically disposed around the first patterned portion and comprising a second plurality of apertures having a second number of apertures greater than the first number of apertures, a perimeter portion concentrically disposed around the second patterned portion, and an outer portion comprising a raised concentric portion disposed on a perimeter of the annular plate. In another aspect, a second, third, and fourth blocker plates are provided. Additionally, a mixing apparatus and a liquid evaporating apparatus for use in a processing chamber are provided.

摘要翻译： 提供了一种用于处理室的设备。 在一个方面，提供了阻挡板，其包括具有第一厚度的内部部分的环形板，并且环形板具有包括中心部分的孔图案，第一图案化部分同心地设置在中心部分周围，并且包括第一多个孔 具有第一数量的孔，第二图案部分同心地设置在第一图案化部分周围，并且包括第二多个孔，其具有大于第一数量孔的第二数量的孔，围绕第二图案化部分同心设置的周边部分， 以及包括设置在所述环形板的周边上的升高的同心部分的外部部分。 另一方面，提供第二，第三和第四阻滞板。 此外，提供了一种用于处理室的混合装置和液体蒸发装置。

公开(公告)号：US20090109568A1

公开(公告)日：2009-04-30

申请号：US11981126

申请日：2007-10-31

申请人： Manuel A. Hernandez ,  Niraj Mahadev ,  Yugraj S. Aujla ,  Yen Fu ,  Nelson Troung ,  Tai Dang

发明人： Manuel A. Hernandez ,  Niraj Mahadev ,  Yugraj S. Aujla ,  Yen Fu ,  Nelson Troung ,  Tai Dang

IPC分类号： G11B33/14

CPC分类号： G11B5/3106 ,  G11B5/3136 ,  G11B5/40 ,  G11B5/6064 ,  G11B5/6082

摘要： The sensitivity of the fly height of a HDD (hard disk drive) recording head to temperature variations can be greatly reduced, eliminated or controlled in a manner to enhance HDD performance under various temperature conditions by affixing a thermal element to the HGA (head gimbals assembly) flexure. The thermal element in this invention is a deposited, patterned layer of DLC (diamond-like carbon) that has a coefficient of thermal expansion that is less than that of the stainless steel flexure. As a result of the placement of this thermal element on the flexure, the temperature-induced angular variations of PSA (pitch static attitude) can be made to compensate for temperature-induced changes in the slider crown curvature, thereby reducing or eliminating fly height variations due to temperature.

摘要翻译： HDD（硬盘驱动器）记录头的飞行高度对温度变化的敏感度可以通过将热元件附接到HGA（头部万向节组件）而以各种温度条件提高HDD性能来大大减少，消除或控制 ）弯曲。 本发明中的热元件是DLC（金刚石状碳）的沉积的图案化层，其具有小于不锈钢挠曲件的热膨胀系数。 作为将该热元件放置在挠曲件上的结果，可以进行PSA的温度诱导的角度变化（俯仰静止姿态）以补偿滑块冠曲率的温度引起的变化，从而减少或消除飞行高度变化 由于温度。

公开(公告)号：US20120058281A1

公开(公告)日：2012-03-08

申请号：US13041201

申请日：2011-03-04

申请人： Zhong Qiang Hua ,  Lei Luo ,  Manuel A. Hernandez ,  Zhitao Cao ,  Kedar Sapre ,  Ajay Bhatnagar

发明人： Zhong Qiang Hua ,  Lei Luo ,  Manuel A. Hernandez ,  Zhitao Cao ,  Kedar Sapre ,  Ajay Bhatnagar

IPC分类号： B05D5/00 ,  C23C16/56 ,  C23C16/50 ,  C23C16/40 ,  C23C16/44

CPC分类号： H01L21/02164 ,  C23C16/40 ,  C23C16/56 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02362

摘要： A method for forming a pre-metal dielectric (PMD) layer or an inter-metal dielectric (IMD) layer over a substrate includes placing the substrate in a chemical vapor deposition (CVD) process chamber and forming a first oxide layer over the substrate in the CVD process chamber. The first oxide layer is formed using a thermal CVD process at a temperature of about 450° C. or less and a sub-atmospheric pressure. The method also includes forming a second oxide layer over the first oxide layer in the CVD process chamber. The second oxide layer is formed using a plasma enhanced chemical vapor deposition (PECVD) process at a temperature of about 450° C. or less and a sub-atmospheric pressure. The substrate remains in the CVD process chamber during formation of the first oxide layer and the second oxide layer.

摘要翻译： 在衬底上形成预金属电介质（PMD）层或金属间电介质（IMD）层的方法包括将衬底放置在化学气相沉积（CVD）处理室中，并在衬底上形成第一氧化物层 CVD处理室。 第一氧化物层使用热CVD工艺在约450℃或更低的温度和低于大气压的压力下形成。 该方法还包括在CVD处理室中的第一氧化物层上形成第二氧化物层。 使用等离子体增强化学气相沉积（PECVD）工艺在约450℃或更低的温度和低于大气压的压力下形成第二氧化物层。 在形成第一氧化物层和第二氧化物层期间，衬底保留在CVD处理室中。

公开(公告)号：US07161767B2

公开(公告)日：2007-01-09

申请号：US10195471

申请日：2002-07-16

申请人： Manuel A. Hernandez ,  Yen Fu

发明人： Manuel A. Hernandez ,  Yen Fu

IPC分类号： G11B5/48 ,  G11B21/21

CPC分类号： G11B5/486

摘要： Methods and devices are described that provide improved electromagnetic interference (EMI) protection for suspension assemblies. In one embodiment, a ground line is provided among the traces that are used in the suspension. Alternatively, a top ground plane is provided on top of the conductive traces with an interposed insulative layer. The ground line and/or the top ground plane provide EMI protection for read and write signals traveling through the traces (e.g., read and write traces) of the suspension assembly. The ground line and/or the top ground plane reduce the interaction between the read and the write traces, thus minimizing cross talk.

摘要翻译： 描述了为悬架组件提供改进的电磁干扰（EMI）保护的方法和装置。 在一个实施例中，在悬架中使用的迹线之间提供接地线。 或者，顶部接地平面设置在导电迹线的顶部，并具有插入的绝缘层。 接地线和/或顶部接地平面为通过悬挂组件的迹线（例如，读取和写入迹线）传输的读取和写入信号提供EMI保护。 接地线和/或顶部接地平面减小读取和写入轨迹之间的相互作用，从而最小化串扰。

公开(公告)号：US07092214B2

公开(公告)日：2006-08-15

申请号：US10229591

申请日：2002-08-27

申请人： Manuel A. Hernandez

发明人： Manuel A. Hernandez

IPC分类号： G11B5/48

CPC分类号： H05K1/028 ,  G11B5/486 ,  H05K1/0266 ,  H05K2201/09145 ,  H05K2201/09936

摘要： A wireless suspension design is described that can be used in varying types of drive designs. In one embodiment, a flex circuit is provided with at least two indicia to indicate where the flex circuit is to be bent when attaching it to a head stack assembly.