摘要:
A method for forming a pre-metal dielectric (PMD) layer or an inter-metal dielectric (IMD) layer over a substrate includes placing the substrate in a chemical vapor deposition (CVD) process chamber and forming a first oxide layer over the substrate in the CVD process chamber. The first oxide layer is formed using a thermal CVD process at a temperature of about 450° C. or less and a sub-atmospheric pressure. The method also includes forming a second oxide layer over the first oxide layer in the CVD process chamber. The second oxide layer is formed using a plasma enhanced chemical vapor deposition (PECVD) process at a temperature of about 450° C. or less and a sub-atmospheric pressure. The substrate remains in the CVD process chamber during formation of the first oxide layer and the second oxide layer.
摘要:
A method for improving conformality of oxide layers along sidewalls of vias in semiconductor substrates includes forming a nitride layer over an upper surface of a semiconductor substrate and forming a via extending through the nitride layer and into the semiconductor substrate. The via may have a depth of at least about 50 μm from a top surface of the nitride layer and an opening of less than about 10 μm at the top surface of the nitride layer. The method also includes forming an oxide layer over the nitride layer and along sidewalls and bottom of the via. The oxide layer may be formed using a thermal chemical vapor deposition (CVD) process at a temperature of less than about 450° C., where a thickness of the oxide layer at the bottom of the via is at least about 50% of a thickness of the oxide layer at the top surface of the nitride layer.
摘要:
A method for improving conformality of oxide layers along sidewalls of vias in semiconductor substrates includes forming a nitride layer over an upper surface of a semiconductor substrate and forming a via extending through the nitride layer and into the semiconductor substrate. The via may have a depth of at least about 50 μm from a top surface of the nitride layer and an opening of less than about 10 μm at the top surface of the nitride layer. The method also includes forming an oxide layer over the nitride layer and along sidewalls and bottom of the via. The oxide layer may be formed using a thermal chemical vapor deposition (CVD) process at a temperature of less than about 450° C., where a thickness of the oxide layer at the bottom of the via is at least about 50% of a thickness of the oxide layer at the top surface of the nitride layer.
摘要:
A method of etching a substrate comprises forming on the substrate, a plurality of double patterning features composed of silicon oxide, silicon nitride, or silicon oxynitride. The substrate having the double patterning features is provided to a process zone. An etching gas comprising nitrogen tri-fluoride, ammonia and hydrogen is energized in a remote chamber. The energized etching gas is introduced into the process zone to etch the double patterning features to form a solid residue on the substrate. The solid residue is sublimated by heating the substrate to a temperature of at least about 100° C.
摘要:
Methods of forming a dielectric liner layer on a semiconductor substrate are described. The method may include flowing a phosphorus-containing precursor with a silicon-containing precursor and an oxygen-containing precursor over the substrate to deposit a dielectric material. The dielectric material may be deposited along a field region and within at least one via on the substrate having a depth of at least 1 μm. The method may also include forming a liner layer within the via with the dielectric material. The liner may include a silicon oxide doped with phosphorus, and the thickness of the liner layer at an upper portion of the via sidewall may be less than about 5 times the thickness of the liner layer at a lower portion of the via sidewall.
摘要:
Methods of forming a dielectric liner layer on a semiconductor substrate are described. The method may include flowing a phosphorus-containing precursor with a silicon-containing precursor and an oxygen-containing precursor over the substrate to deposit a dielectric material. The dielectric material may be deposited along a field region and within at least one via on the substrate having a depth of at least 1 μm. The method may also include forming a liner layer within the via with the dielectric material. The liner may include a silicon oxide doped with phosphorus, and the thickness of the liner layer at an upper portion of the via sidewall may be less than about 5 times the thickness of the liner layer at a lower portion of the via sidewall.
摘要:
A method of etching silicon-and-carbon-containing material is described and includes a SiConi™ etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConi™ etch reducing the carbon content in the near surface region and allowing the SiConi™ etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConi™ etch further improving the effective etch rate.
摘要:
Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
摘要:
A method of forming and removing a sacrificial oxide layer is described. The method includes forming a step on a substrate, where the step has a top and sidewalls. The method may also include forming the sacrificial oxide layer around the step by chemical vapor deposition of molecular oxygen and TEOS, where the oxide layer is formed on the top and sidewalls of the step. The method may also include removing a top portion of the oxide layer and the step; removing a portion of the substrate exposed by the removal of the step to form a etched substrate; and removing the entire sacrificial oxide layer from the etched substrate.
摘要:
Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.