利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

120 条记录 (耗时 0.037 秒)

    CHAMBER COMPONENTS FOR CVD APPLICATIONS
    1.
    发明申请
    CHAMBER COMPONENTS FOR CVD APPLICATIONS 审中-公开
    用于CVD应用的CHAMBER组件

    公开(公告)号：US20100006032A1

    公开(公告)日：2010-01-14

    申请号：US12501195

    申请日：2009-07-10

    申请人： Kimberly Hinckley ,  Yizhen Zhang ,  Manuel A. Hernandez ,  Won B. Bang ,  Dmitry Lubomirsky

    发明人： Kimberly Hinckley ,  Yizhen Zhang ,  Manuel A. Hernandez ,  Won B. Bang ,  Dmitry Lubomirsky

    IPC分类号： C23C16/00

    CPC分类号： C23C16/452 ,  C23C16/4481 ,  C23C16/45512 ,  C23C16/45591

    摘要： Apparatus for use with a processing chamber are provided. In one aspect a blocker plate is provided including an annular plate having an inner portion of a first thickness and the annular plate having an aperture pattern including a center portion, a first patterned portion concentrically disposed around the center portion and comprising a first plurality of apertures having a first number of apertures, an second patterned portion concentrically disposed around the first patterned portion and comprising a second plurality of apertures having a second number of apertures greater than the first number of apertures, a perimeter portion concentrically disposed around the second patterned portion, and an outer portion comprising a raised concentric portion disposed on a perimeter of the annular plate. In another aspect, a second, third, and fourth blocker plates are provided. Additionally, a mixing apparatus and a liquid evaporating apparatus for use in a processing chamber are provided.

    摘要翻译： 提供了一种用于处理室的设备。 在一个方面，提供了阻挡板，其包括具有第一厚度的内部部分的环形板，并且环形板具有包括中心部分的孔图案，第一图案化部分同心地设置在中心部分周围，并且包括第一多个孔 具有第一数量的孔，第二图案部分同心地设置在第一图案化部分周围，并且包括第二多个孔，其具有大于第一数量孔的第二数量的孔，围绕第二图案化部分同心设置的周边部分， 以及包括设置在所述环形板的周边上的升高的同心部分的外部部分。 另一方面，提供第二，第三和第四阻滞板。 此外，提供了一种用于处理室的混合装置和液体蒸发装置。

    WAFER PROFILE MODIFICATION THROUGH HOT/COLD TEMPERATURE ZONES ON PEDESTAL FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT
    2.
    发明申请
    WAFER PROFILE MODIFICATION THROUGH HOT/COLD TEMPERATURE ZONES ON PEDESTAL FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT 审中-公开
    通过半导体制造设备的底座上的热/冷温区域进行波形配置修改

    公开(公告)号：US20120074126A1

    公开(公告)日：2012-03-29

    申请号：US13072546

    申请日：2011-03-25

    申请人： Won B. Bang ,  Tien Fak Tan ,  Son M. Phi ,  Dmitry Lubomirsky

    发明人： Won B. Bang ,  Tien Fak Tan ,  Son M. Phi ,  Dmitry Lubomirsky

    IPC分类号： H05B3/68

    CPC分类号： H01L21/68785 ,  H01L21/67109

    摘要： A substrate support comprising a top ceramic plate providing a substrate support surface for supporting a substrate during substrate processing, a substrate pedestal having coolant channels formed therein and a thermoelectric deck sandwiched between the top ceramic plate and substrate pedestal. The thermoelectric deck includes a plurality of embedded thermoelectric elements that can either heat or cool the substrate support surface.

    摘要翻译： 一种衬底支撑件，包括顶部陶瓷板，其提供用于在衬底处理期间支撑衬底的衬底支撑表面，其中形成有冷却剂通道的衬底基座和夹在顶部陶瓷板和衬底基座之间的热电板。 热电甲板包括可以加热或冷却基板支撑表面的多个嵌入式热电元件。

    COUNTER-BALANCED SUBSTRATE SUPPORT
    3.
    发明申请
    COUNTER-BALANCED SUBSTRATE SUPPORT 审中-公开
    计数平衡基板支持

    公开(公告)号：US20090120584A1

    公开(公告)日：2009-05-14

    申请号：US12059820

    申请日：2008-03-31

    申请人： Dmitry Lubomirsky ,  Toan Q. Tran ,  Lun Tsuei ,  Manuel A. Hernandez ,  Kirby H. Floyd ,  Ellie Y. Yieh

    发明人： Dmitry Lubomirsky ,  Toan Q. Tran ,  Lun Tsuei ,  Manuel A. Hernandez ,  Kirby H. Floyd ,  Ellie Y. Yieh

    IPC分类号： C23F1/08 ,  B05C13/00 ,  B05C15/00 ,  H01L21/677 ,  B05C21/00

    CPC分类号： H01L21/6719 ,  H01L21/67017 ,  H01L21/68742 ,  H01L21/68792

    摘要： A semiconductor processing system is described. The system includes a processing chamber having an interior capable of holding an internal chamber pressure below ambient atmospheric pressure. The system also includes a pumping system coupled to the chamber and adapted to remove material from the processing chamber. The system further includes a substrate support pedestal, where the substrate support pedestal is rigidly coupled to a substrate support shaft extending through a wall of the processing chamber. A bracket located outside the processing chamber is provided which is rigidly and sometimes rotatably coupled to the substrate support shaft. A motor coupled to the bracket can be actuated to vertically translate the substrate support pedestal, shaft and bracket from a first position to a second position closer to a processing plate. A piston mounted on an end of the bracket provides a counter-balancing force to a tilting force, where the tilting force is generated by a change in the internal chamber pressure and causes a deflection in the position of the bracket and the substrate support. The counter-balancing force reduces the deflection of the bracket and the substrate support.

    摘要翻译： 描述半导体处理系统。 该系统包括具有能够将内部室压力保持在环境大气压力以下的内部的处理室。 该系统还包括耦合到腔室并适于从处理室移除材料的泵送系统。 该系统还包括基板支撑基座，其中基板支撑基座刚性地联接到延伸穿过处理室的壁的基板支撑轴。 提供位于处理室外部的支架，其刚性且有时可旋转地联接到基板支撑轴。 耦合到支架的马达可以被致动以将基板支撑基座，轴和托架从第一位置垂直平移到靠近处理板的第二位置。 安装在支架的端部上的活塞提供与倾斜力的反平衡力，其中倾斜力由内部室压力的变化产生，并且引起支架和基板支撑件的位置的偏转。 反平衡力减小了支架和基板支架的挠曲。

    HEATER WITH INDEPENDENT CENTER ZONE CONTROL
    4.
    发明申请
    HEATER WITH INDEPENDENT CENTER ZONE CONTROL 审中-公开
    加热器具有独立的中心区域控制

    公开(公告)号：US20120103970A1

    公开(公告)日：2012-05-03

    申请号：US13099220

    申请日：2011-05-02

    申请人： Dmitry Lubomirsky ,  Sudhir R. Gondhalekar ,  Shankar Venkataraman ,  Kirby H. Floyd ,  Yizhen Zhang

    发明人： Dmitry Lubomirsky ,  Sudhir R. Gondhalekar ,  Shankar Venkataraman ,  Kirby H. Floyd ,  Yizhen Zhang

    IPC分类号： H05B3/74 ,  H05B3/02

    CPC分类号： H01L21/67103 ,  H01L21/68792

    摘要： A substrate heater comprising a ceramic substrate support having a substantially flat upper surface for supporting a substrate during substrate processing; a resistive heater embedded within the substrate support; a heater shaft coupled to a back surface of the substrate support, the heater having an interior cavity that extends along its longitudinal axis and ends at a bottom central surface of the substrate support; and a supplemental heater, separate from the ceramic substrate support, positioned within the interior cavity of the heater shaft in thermal contact with a portion of the bottom central surface of the substrate support such that the supplemental heater can alter the temperature of a central area of the upper surface of the substrate support.

    摘要翻译： 一种衬底加热器，包括陶瓷衬底支撑件，其具有在衬底处理期间用于支撑衬底的基本平坦的上表面; 嵌入在所述衬底支架内的电阻加热器; 加热器轴，其联接到所述基板支撑件的后表面，所述加热器具有沿着其纵向轴线延伸并且在所述基板支撑件的底部中心表面处终止的内部空腔; 以及与陶瓷基板支撑件分开的补充加热器，其位于加热器轴的内部空腔内，与基板支撑件的底部中心表面的一部分热接触，使得补充加热器可以改变加热器轴的中心区域的温度 衬底的上表面支撑。

    Electrostatic chuck with advanced RF and temperature uniformity
    9.
    发明授权
    Electrostatic chuck with advanced RF and temperature uniformity 有权
    静电卡盘具有先进的射频和温度均匀性

    公开(公告)号：US08937800B2

    公开(公告)日：2015-01-20

    申请号：US13867515

    申请日：2013-04-22

    申请人： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, Jr. ,  Samer Banna

    发明人： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, Jr. ,  Samer Banna

    IPC分类号： H02N13/00 ,  H01L21/67

    CPC分类号： H02N13/00 ,  H01L21/67103

    摘要： Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.

    摘要翻译： 描述了具有RF和温度均匀性的静电卡盘（ESCs）。 例如，ESC包括顶部电介质层。 上部金属部分设置在顶部电介质层的下方。 第二电介质层设置在多个像素化电阻加热器的上方，并且被上部金属部分部分地包围。 第三电介质层设置在第二电介质层的下方，第三介电层和第二电介质层之间具有边界。 多个通孔设置在第三电介质层中。 总线功率棒分布层设置在多个通孔的下方并耦合到多个通孔。 第四电介质层设置在母线功率分配层的下方，第四电介质层和第三电介质层之间具有边界。 金属基底设置在第四电介质层的下方。 金属基座包括容纳在其中的多个高功率加热器元件。

    ELECTROSTATIC CHUCK WITH ADVANCED RF AND TEMPERATURE UNIFORMITY
    10.
    发明申请
    ELECTROSTATIC CHUCK WITH ADVANCED RF AND TEMPERATURE UNIFORMITY 有权
    具有高级射频和温度均匀性的静电卡盘

    公开(公告)号：US20130279066A1

    公开(公告)日：2013-10-24

    申请号：US13867515

    申请日：2013-04-22

    申请人： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, JR. ,  Samer Banna

    发明人： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, JR. ,  Samer Banna

    IPC分类号： H02N13/00

    CPC分类号： H02N13/00 ,  H01L21/67103

    摘要： Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.

    摘要翻译： 描述了具有RF和温度均匀性的静电卡盘（ESCs）。 例如，ESC包括顶部电介质层。 上部金属部分设置在顶部电介质层的下方。 第二电介质层设置在多个像素化电阻加热器的上方，并且被上部金属部分部分地包围。 第三电介质层设置在第二电介质层的下方，第三电介质层和第二电介质层之间具有边界。 多个通孔设置在第三电介质层中。 总线功率棒分布层设置在多个通孔的下方并耦合到多个通孔。 第四电介质层设置在母线功率分配层的下方，第四电介质层和第三电介质层之间具有边界。 金属基底设置在第四电介质层的下方。 金属基座包括容纳在其中的多个高功率加热器元件。