公开(公告)号：US09000484B2

公开(公告)日：2015-04-07

申请号：US13478402

申请日：2012-05-23

申请人： Sameh G. Khalil ,  Karim S. Boutros

发明人： Sameh G. Khalil ,  Karim S. Boutros

IPC分类号： H01L29/66 ,  H01L21/265 ,  H01L29/34 ,  H01L29/778 ,  H01L29/20 ,  H01L29/423

CPC分类号： H01L29/66431 ,  H01L21/26546 ,  H01L29/2003 ,  H01L29/34 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7786

摘要： A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.

摘要翻译： 高电子迁移率场效应晶体管（HEMT）包括栅极和漏极之间的漂移区域中的二维电子气体（2DEG），其具有在栅极和漏极的漂移区域中的方向上增加的非均匀横向2DEG分布 到排水

公开(公告)号：US20130313612A1

公开(公告)日：2013-11-28

申请号：US13478609

申请日：2012-05-23

申请人： Sameh Khalil ,  Karim S. Boutros ,  Keisuke Shinohara

发明人： Sameh Khalil ,  Karim S. Boutros ,  Keisuke Shinohara

IPC分类号： H01L29/778 ,  H01L21/336

CPC分类号： H01L29/4236 ,  H01L29/06 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： A high electron mobility field effect transistor (HEMT) having a substrate, a channel layer on the substrate and a barrier layer on the channel layer includes a stress inducing layer on the barrier layer, the stress inducing layer varying the piezo-electric effect in the barrier layer in a drift region between a gate and a drain. A two dimensional electron gas (2DEG) has a non-uniform lateral distribution in the drift region between the gate and the drain.

摘要翻译： 具有衬底，衬底上的沟道层和沟道层上的阻挡层的高电子迁移率场效应晶体管（HEMT）包括在阻挡层上的应力诱导层，应力诱导层改变了压电效应 栅极和漏极之间的漂移区域中的阻挡层。 二维电子气（2DEG）在栅极和漏极之间的漂移区域中具有不均匀的横向分布。

公开(公告)号：US06635507B1

公开(公告)日：2003-10-21

申请号：US09353526

申请日：1999-07-14

申请人： Karim S. Boutros ,  Dmitri D. Krut ,  Nasser H. Karam

发明人： Karim S. Boutros ,  Dmitri D. Krut ,  Nasser H. Karam

IPC分类号： H01L2100

CPC分类号： H01L31/0504 ,  B64G1/443 ,  H01L27/1421 ,  Y02E10/50

摘要： An apparatus and method are described for making a solar cell with an integrated bypass diode. The method comprises the steps of depositing a second layer having a first type of dopant on a first layer having an opposite type of dopant to the first type of dopant to form a solar cell, depositing a third layer having the first type of dopant on the second layer, depositing a fourth layer having the opposite type of dopant on the third layer, the third layer and fourth layer forming a bypass diode, selectively etching the third layer and the fourth layer to expose the second layer and the third layer, and applying contacts to the fourth layer, third layer, and the first layer to allow electrical connections to the assembly. The apparatus comprises a first layer having a first type of dopant, a second layer having a second type of dopant opposite to the first type of dopant, wherein the first layer and the second layer form a solar cell, a third layer, coupled to the second layer, and a fourth layer, coupled to the third layer, the third layer and the fourth layer forming a bypass diode.

摘要翻译： 描述了一种用于制造具有集成旁路二极管的太阳能电池的装置和方法。 该方法包括以下步骤：在具有相反类型的掺杂剂的第一层上沉积具有第一类型的掺杂剂的第二层与第一类型的掺杂剂形成太阳能电池，将具有第一类型掺杂剂的第三层沉积在第 在第三层上沉积具有相反类型掺杂剂的第四层，第三层和第四层形成旁路二极管，选择性地蚀刻第三层和第四层以暴露第二层和第三层，并施加 接触到第四层，第三层和第一层，以允许电连接到组件。 该装置包括具有第一类型掺杂剂的第一层，具有与第一类型掺杂剂相反的第二类型掺杂剂的第二层，其中第一层和第二层形成太阳能电池，第三层耦合到 第二层和第四层，耦合到第三层，第三层和第四层形成旁路二极管。

公开(公告)号：US06350944B1

公开(公告)日：2002-02-26

申请号：US09580286

申请日：2000-05-30

申请人： Raed A. Sherif ,  Karim S. Boutros

发明人： Raed A. Sherif ,  Karim S. Boutros

IPC分类号： H01L31042

CPC分类号： H01L31/042 ,  Y02E10/50 ,  Y10S136/292 ,  Y10S136/293 ,  Y10S323/906 ,  Y10T307/653

摘要： A reconfigurable solar panel system having a plurality of solar cells arranged in a predefined pattern on a printed circuit board having a predefined pattern of interconnection paths to form at least one solar cell module. The solar panel being made of at least one solar cell module and having the capability to be configured and reconfigured by programming at least one integrated circuit that communicates with each and every solar cell on the solar module. The present invention is capable of monitoring, controlling, and protecting the solar panel, as well as being reconfigured before, during and after the panel is assembled. With the present invention it is also possible to reconfigure the solar panel after it has been employed in an application, such as a satellite that is in orbit.

摘要翻译： 一种可重新配置的太阳能电池板系统，其具有以预定图案布置在印刷电路板上的多个太阳能电池板，该印刷电路板具有预定的互连路径图案，以形成至少一个太阳能电池模块。 太阳能电池板由至少一个太阳能电池模块制成，并且具有通过编程与太阳能模块上的每个太阳能电池通信的至少一个集成电路来配置和重新配置的能力。 本发明能够监测，控制和保护太阳能电池板，以及在面板组装之前，期间和之后进行重新配置。 利用本发明，也可以在将太阳能电池板应用于诸如正在轨道的卫星的应用中之后重新配置。

公开(公告)号：US20130313560A1

公开(公告)日：2013-11-28

申请号：US13479018

申请日：2012-05-23

申请人： Sameh G. Khalil ,  Karim S. Boutros

发明人： Sameh G. Khalil ,  Karim S. Boutros

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/205

CPC分类号： H01L29/66431 ,  H01L21/0271 ,  H01L21/0275 ,  H01L21/3085 ,  H01L29/0843 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66469 ,  H01L29/772 ,  H01L29/7787

摘要： A HEMT device has a substrate; a buffer layer disposed above the substrate; a carrier supplying layer disposed above the buffer layer; a gate element penetrating the carrier supplying layer; and a drain element disposed on the carrier supplying layer. The carrier supplying layer has a non-uniform thickness between the gate element and the drain element, the carrier supplying layer having a relatively greater thickness adjacent the drain element and a relatively thinner thickness adjacent the gate element. A non-uniform two-dimensional electron gas conduction channel is formed in the carrier supplying layer, the two-dimensional electron gas conduction channel having a non-uniform profile between the gate and drain elements.

摘要翻译： HEMT装置具有基板; 设置在所述基板上方的缓冲层; 设置在所述缓冲层上方的载体供给层; 穿过载体供应层的栅极元件; 以及设置在载体供给层上的漏极元件。 载体供给层在栅极元件和漏极元件之间具有不均匀的厚度，载体供给层具有与漏极元件相邻的相对较大的厚度，并且邻近栅极元件具有相对较薄的厚度。 在载体供应层中形成不均匀的二维电子气导电通道，二维电子气传导通道在栅极和漏极之间具有不均匀的轮廓。

公开(公告)号：US20100097119A1

公开(公告)日：2010-04-22

申请号：US12256321

申请日：2008-10-22

申请人： Yin Tat Ma ,  Jonathan Hacker ,  Karim S. Boutros

发明人： Yin Tat Ma ,  Jonathan Hacker ,  Karim S. Boutros

IPC分类号： H03K17/687

CPC分类号： H01P1/15

摘要： Devices and systems for using a Gallium Nitride-based (GaN-based) transistor for selectively switching signals are provided. A first transmission line is configured to connect a common connection and a first connection. A first Gallium-Nitride-based (GaN-based) transistor has a first terminal coupled to the first transmission line at a first point, a second terminal coupled to a relative ground, and a third terminal configured to be coupled to a first control connection. A second GaN-based transistor has a first terminal coupled to the first transmission line at a second point, a second terminal configured to be coupled to the relative ground, and a third terminal configured to be coupled to the first control connection.

摘要翻译： 提供了用于选择性地切换信号的使用基于氮化镓（GaN）的晶体管的器件和系统。 第一传输线被配置为连接公共连接和第一连接。 第一基于氮化镓的（GaN基）晶体管具有在第一点处耦合到第一传输线的第一端子，耦合到相对地的第二端子，以及被配置为耦合到第一控制连接 。 第二GaN基晶体管具有在第二点处耦合到第一传输线的第一端子，被配置为耦合到相对地的第二端子，以及被配置为耦合到第一控制连接的第三端子。

公开(公告)号：US08853709B2

公开(公告)日：2014-10-07

申请号：US13456039

申请日：2012-04-25

申请人： Rongming Chu ,  David F. Brown ,  Xu Chen ,  Adam J. Williams ,  Karim S. Boutros

发明人： Rongming Chu ,  David F. Brown ,  Xu Chen ,  Adam J. Williams ,  Karim S. Boutros

IPC分类号： H01L29/778 ,  H01L29/20

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/2006 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/513 ,  H01L29/66522 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78

摘要： A field effect transistor (FET) includes a III-Nitride channel layer, a III-Nitride barrier layer on the channel layer, wherein the barrier layer has an energy bandgap greater than the channel layer, a source electrode electrically coupled to one of the III-Nitride layers, a drain electrode electrically coupled to one of the III-Nitride layers, a gate insulator layer stack for electrically insulating a gate electrode from the barrier layer and the channel layer, the gate insulator layer stack including an insulator layer, such as SiN, and an AlN layer, the gate electrode in a region between the source electrode and the drain electrode and in contact with the insulator layer, and wherein the AlN layer is in contact with one of the III-Nitride layers.

摘要翻译： 场效应晶体管（FET）包括III-氮化物沟道层，沟道层上的III-氮化物阻挡层，其中该阻挡层具有比该沟道层大的能带隙，该电极与III 氮化物层，电耦合到III族氮化物层之一的漏电极，用于将栅极电极与阻挡层电绝缘的栅极绝缘体层堆叠和沟道层，栅极绝缘体层堆叠包括绝缘体层，例如 SiN和AlN层，栅电极在源电极和漏电极之间的区域中并与绝缘体层接触，并且其中AlN层与III-氮化物层之一接触。

公开(公告)号：US08530978B1

公开(公告)日：2013-09-10

申请号：US13312406

申请日：2011-12-06

申请人： Rongming Chu ,  Zijian “Ray” Li ,  Karim S. Boutros ,  Shawn Burnham

发明人： Rongming Chu ,  Zijian “Ray” Li ,  Karim S. Boutros ,  Shawn Burnham

IPC分类号： H01L29/66

CPC分类号： H01L29/66462 ,  H01L21/31144 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/7786

摘要： A field effect transistor (FET) having a source contact to a channel layer, a drain contact to the channel layer, and a gate contact on a barrier layer over the channel layer, the FET including a dielectric layer on the barrier layer between the source contact and the drain contact and over the gate contact, and a field plate on the dielectric layer, the field plate connected to the source contact and extending over a space between the gate contact and the drain contact and the field plate comprising a sloped sidewall in the space between the gate contact and the drain contact.

摘要翻译： 具有到沟道层的源极接触的场效应晶体管（FET），沟道层的漏极接触以及沟道层上的阻挡层上的栅极接触，所述FET包括在源极之间的阻挡层上的介电层 接触和漏极接触以及栅极接触，以及介电层上的场板，场板连接到源极接触并在栅极接触和漏极接触之间的空间上延伸，场板包括倾斜的侧壁 栅极接触和漏极接触之间的空间。