公开(公告)号：US06573534B1

公开(公告)日：2003-06-03

申请号：US09265582

申请日：1999-03-10

申请人： Rajesh Kumar ,  Tsuyoshi Yamamoto ,  Shoichi Onda ,  Mitsuhiro Kataoka ,  Kunihiko Hara ,  Eiichi Okuno ,  Jun Kojima

发明人： Rajesh Kumar ,  Tsuyoshi Yamamoto ,  Shoichi Onda ,  Mitsuhiro Kataoka ,  Kunihiko Hara ,  Eiichi Okuno ,  Jun Kojima

IPC分类号： H01L310312

CPC分类号： H01L29/7828 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7838 ,  Y10S438/931

摘要： A semiconductor device, comprising: a semiconductor substrate comprising silicon carbide of a first conductivity type; a silicon carbide epitaxial layer of the first conductivity type; a first semiconductor region formed on the semiconductor substrate and comprising silicon carbide of a second conductivity type; a second semiconductor region formed on the first semiconductor region, comprising silicon carbide of the first conductivity type and separated from the semiconductor substrate of the first conductivity type by the first semiconductor region; a third semiconductor region formed on the semiconductor region, connected to the semiconductor substrate and the second semiconductor region, comprising silicon carbide of the first conductivity type, and of higher resistance than the semiconductor substrate; and a gate electrode formed on the third semiconductor region via an insulating layer; wherein the third semiconductor layer is depleted when no voltage is being applied to the gate electrode so that said semiconductor device has a normally OFF characteristic.

摘要翻译： 一种半导体器件，包括：包含第一导电类型的碳化硅的半导体衬底; 第一导电类型的碳化硅外延层; 形成在所述半导体衬底上并且包括第二导电类型的碳化硅的第一半导体区域; 形成在所述第一半导体区域上的第二半导体区域，包括所述第一导电类型的碳化硅并且通过所述第一半导体区域与所述第一导电类型的半导体衬底分离; 形成在所述半导体区域上的第三半导体区域，与所述半导体衬底和所述第二半导体区域连接，所述第二半导体区域包括所述第一导电型的碳化硅，并且具有比所述半导体衬底更高的电阻; 以及经由绝缘层形成在所述第三半导体区域上的栅电极; 其中当没有电压施加到所述栅电极时，所述第三半导体层被耗尽，使得所述半导体器件具有正常OFF特性。

公开(公告)号：US6054752A

公开(公告)日：2000-04-25

申请号：US107507

申请日：1998-06-30

申请人： Kazukuni Hara ,  Yuichi Takeuchi ,  Tsuyoshi Yamamoto ,  Rajesh Kumar ,  Mitsuhiro Kataoka

发明人： Kazukuni Hara ,  Yuichi Takeuchi ,  Tsuyoshi Yamamoto ,  Rajesh Kumar ,  Mitsuhiro Kataoka

IPC分类号： H01L21/04 ,  H01L29/06 ,  H01L29/24 ,  H01L29/78 ,  H01L29/34 ,  H01L29/40

CPC分类号： H01L29/7813 ,  H01L29/0611 ,  H01L29/0638 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/1608

摘要： A semiconductor device comprises a semiconductor substrate including a first conductivity type first semiconductor layer and a second conductivity type second semiconductor layer formed on the first semiconductor layer. A unit cell for controlling current flowing between a source electrode and a drain electrode is formed in the semiconductor substrate. A trench is formed in a peripheral region of the unit cell to form mesa structure. A field relaxing layer is formed between an insulating film on a side face of the second trench and both the first semiconductor layer and the second semiconductor layer in order to relax concentration of an electric field in the insulating film.

摘要翻译： 半导体器件包括：半导体衬底，包括形成在第一半导体层上的第一导电型第一半导体层和第二导电型第二半导体层。 在半导体衬底中形成用于控制在源电极和漏电极之间流动的电流的单元。 在单电池的周边区域形成沟槽，形成台面结构。 在第二沟槽的侧面上的绝缘膜与第一半导体层和第二半导体层之间形成场弛豫层，以使绝缘膜中的电场的集中化。

公开(公告)号：US20130005318A1

公开(公告)日：2013-01-03

申请号：US13519702

申请日：2010-12-27

申请人： Masayuki Motegi ,  Yoshitsugu Shimazu ,  Hidehiko Oyane ,  Tsuyoshi Yamamoto

发明人： Masayuki Motegi ,  Yoshitsugu Shimazu ,  Hidehiko Oyane ,  Tsuyoshi Yamamoto

IPC分类号： H04W4/00

CPC分类号： H04W24/08 ,  H04W88/10 ,  H04W92/12

摘要： In a BRE300, an RF interface for transmitting and receiving an RF signal is used for communication with a MDE 200 and a digital signal interface for transmitting and receiving a digital signal in accordance with CPRI is used for communication with BDE 300. The BRE 300 includes a monitoring signal interface configured to notify the MDE 200 of a monitoring signal indicating a state of the radio unit 50. The signal transmitted and received through the monitoring signal interface is a ground signal and is of type different from types of signals transmitted and received by the RF interface and the digital signal interface.

摘要翻译： 在BRE300中，用于发送和接收RF信号的RF接口用于与MDE 200进行通信，并且用于根据CPRI发送和接收数字信号的数字信号接口用于与BDE 300进行通信。BRE 300包括 监视信号接口，被配置为向MDE 200通知指示无线电单元50的状态的监视信号。通过监视信号接口发送和接收的信号是接地信号，并且类型与由信号发送和接收的信号的类型不同 RF接口和数字信号接口。

公开(公告)号：US08285088B2

公开(公告)日：2012-10-09

申请号：US12068351

申请日：2008-02-05

申请人： Hirofumi Aota ,  Kohei Shibata ,  Tsuyoshi Yamamoto

发明人： Hirofumi Aota ,  Kohei Shibata ,  Tsuyoshi Yamamoto

IPC分类号： G02B6/12 ,  G02B6/34 ,  G02B7/02

CPC分类号： G02B6/29311 ,  G02B6/29313 ,  G02B6/3512 ,  G02B6/3548 ,  G02B6/356 ,  G02B6/3586 ,  H04J14/0201

摘要： A wavelength selective switch for suppressing degradation of pass band characteristics when the temperature rises. The wavelength selective switch includes a spectroscopic element for separating input light and providing angular dispersion depending on wavelengths, a collective lens for gathering light output from the spectroscopic element, and a movable reflection block which includes a plurality of mirrors arranged in the direction of angular dispersion made by the spectroscopic element, changes the angles of the mirrors in a direction differing from the direction of angular dispersion, and reflects the light coming from the collective lens. The collective lens is fixed at one end with respect to the direction of angular dispersion, expands with heat in a direction in which it is not fixed when the temperature rises, and outputs the light in a direction opposite to the direction in which the angle of light output from the spectroscopic element changes.

摘要翻译： 一种用于当温度升高时抑制通带特性劣化的波长选择开关。 波长选择开关包括用于分离输入光并提供取决于波长的角度色散的分光元件，用于聚集从分光元件输出的光的集体透镜，以及可移动反射块，其包括沿角度分散方向布置的多个反射镜 由分光元件制成的反射镜的角度沿与角度分散方向不同的方向改变，并且反射来自聚光透镜的光。 集体透镜相对于角度分散的方向固定在一端，当温度升高时，其在不固定的方向上以热量方式膨胀，并且沿与该角度的方向相反的方向输出光 分光元件的光输出变化。

公开(公告)号：US08232125B2

公开(公告)日：2012-07-31

申请号：US12457677

申请日：2009-06-18

申请人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Hisao Sudo ,  Yasuhiko Arakawa

发明人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Hisao Sudo ,  Yasuhiko Arakawa

IPC分类号： H01L21/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/06226 ,  H01S5/0655 ,  H01S5/3086 ,  H01S5/3412 ,  H01S5/34306 ,  H01S5/34353 ,  H01S2301/18

摘要： An active layer having a p-type quantum dot structure is disposed over a lower cladding layer made of semiconductor material of a first conductivity type. An upper cladding layer is disposed over the active layer. The upper cladding layer is made of semiconductor material, and includes a ridge portion and a cover portion. The ridge portion extends in one direction, and the cover portion covers the surface on both sides of the ridge portion. A capacitance reducing region is disposed on both sides of the ridge portion and reaching at least the lower surface of the cover portion. The capacitance reducing region has the first conductivity type or a higher resistivity than that of the ridge portion, and the ridge portion has a second conductivity type. If the lower cladding layer is an n-type, the capacitance reducing region reaches at least the upper surface of the lower cladding layer.

摘要翻译： 具有p型量子点结构的有源层设置在由第一导电类型的半导体材料制成的下包层上。 上覆层设置在有源层上。 上包层由半导体材料制成，并且包括脊部和盖部。 脊部沿一个方向延伸，并且盖部分覆盖脊部两侧的表面。 电容减小区域设置在脊部的两侧并且至少到达盖部的下表面。 电容减小区域具有比脊部分的第一导电类型或更高的电阻率，并且脊部分具有第二导电类型。 如果下包层为n型，则电容减小区域至少到达下包层的上表面。

公开(公告)号：US08068744B2

公开(公告)日：2011-11-29

申请号：US12662726

申请日：2010-04-30

申请人： Suguru Akiyama ,  Tsuyoshi Yamamoto

发明人： Suguru Akiyama ,  Tsuyoshi Yamamoto

IPC分类号： H04B10/04 ,  H04J14/02

CPC分类号： H04B10/58 ,  G02B6/12004 ,  G02B6/12007 ,  G02F1/3519 ,  H01S5/0078 ,  H04B10/25 ,  H04B10/503 ,  H04B10/504

摘要： In an optical transmitter comprising a directly modulated laser and a wavelength filter provided on a post-stage of the directly modulated laser, the wavelength filter has a modulated light input port for inputting modulated light output from the directly modulated laser, a filter transmitted light output port for outputting light having a wavelength included in a filter transmission band among the modulated light as filter transmitted light, and a filter cutoff light output port provided separately from the modulated light input port and the filter transmitted light output port and outputting light having a wavelength included in a filter cutoff band among the modulated light as filter cutoff light, and the peak of the filter transmission band is set on a shorter-wave side from the peak of the spectrum of modulated light output from the directly modulated laser.

摘要翻译： 在包括直接调制激光器和设置在直接调制激光器的后级上的波长滤波器的光发射机中，波长滤波器具有用于输入从直接调制的激光器输出的调制光的调制光输入端口，滤波器透射光输出 用于输出调制光中包括在滤波器传输频带中的波长的光作为滤波器透射光的端口，以及与调制光输入端口和滤光透射光输出端口分离设置的滤光器截止光输出端口，并输出具有波长 被包含在作为滤波器截止光的调制光中的滤波器截止频带中，并且滤波器传输频带的峰值被设置在从直接调制的激光器输出的调制光谱的峰值的较短波侧。

公开(公告)号：US08068273B2

公开(公告)日：2011-11-29

申请号：US12571787

申请日：2009-10-01

申请人： Takashi Shimizu ,  Koji Terada ,  Tsuyoshi Yamamoto

发明人： Takashi Shimizu ,  Koji Terada ,  Tsuyoshi Yamamoto

IPC分类号： G02F2/00 ,  H04B10/04

CPC分类号： G02F1/21 ,  G02F2001/215 ,  G02F2203/20 ,  G02F2203/21 ,  H04L27/2071 ,  H04L27/223

摘要： A demodulator and method are provided. The demodulator for demodulating an optical signal, includes a splitter that splits a differential phase modulation signal into a first split light component and a second split light component, couples the first split light component to a first optical path and the second split light component to a second optical path, a first medium disposed on the first optical path, a second medium disposed on the second optical path and having a refractive index different from that of the first medium, and a combiner that combines the first split light component that has passed through the first medium and the second split light component that has passed through the second medium, wherein one of the first split light component and the second split light component is delayed in relation to the other.

摘要翻译： 提供了一种解调器和方法。 用于解调光信号的解调器包括将差分相位调制信号分离成第一分光元件和第二分光元件的分光器，将第一分光元件耦合到第一光路，将第二分光元件耦合到 第二光路，布置在第一光路上的第一介质，设置在第二光路上并且具有与第一介质不同的折射率的第二介质，以及组合器，其组合已经穿过的第一分裂光分量 通过第二介质的第一中分光元件和第二分光元件，其中第一分光元件和第二分光元件中的一个相对于另一个延迟。

公开(公告)号：US07991447B2

公开(公告)日：2011-08-02

申请号：US10577944

申请日：2004-07-01

申请人： Hiroki Sato ,  Masashi Kiguchi ,  Atsushi Maki ,  Tsuyoshi Yamamoto

发明人： Hiroki Sato ,  Masashi Kiguchi ,  Atsushi Maki ,  Tsuyoshi Yamamoto

IPC分类号： A61B5/1455

CPC分类号： A61B5/14553

摘要： To control information obtained from inside of a living body with higher precision as compared to that in the conventional technology by controlling a ratio of intensities of light, directed to a trial body, in a plurality of wavelength ranges different in peak wavelength from each other, a measurement error included in information obtained from the living body can be controlled by changing a ratio of intensity of the light in the first wavelength range against that of the light in the second wavelength range. When intensity of irradiated light is limited from the viewpoint of safety to the trial subject, keeping a ratio of the light irradiated to the trial body in the first wavelength range against that of the light in the second wavelength range under a prespecified value and also changing the ratio of irradiated light intensities under the prespecified value.

摘要翻译： 通过在峰值波长不同的多个波长范围内控制指向试验体的光的强度比，通过控制比现有技术更高的精度从内部获得的生物体的信息， 可以通过改变第一波长范围内的光的强度与第二波长范围内的光的强度的比例来控制从生物体获得的信息中包括的测量误差。 当照射光的强度从安全性的角度受限于试验对象时，将照射在试验体上的光的第1波长范围内的光与第2波长范围内的光的比例保持在规定值以下， 照射光强度的比例在预先指定的值之下。

公开(公告)号：US07899283B2

公开(公告)日：2011-03-01

申请号：US12868163

申请日：2010-08-25

申请人： Manabu Matsuda ,  Tsuyoshi Yamamoto

发明人： Manabu Matsuda ,  Tsuyoshi Yamamoto

IPC分类号： G02B6/34

CPC分类号： H01S5/1228 ,  B82Y20/00 ,  H01S5/0654 ,  H01S5/1215 ,  H01S5/124 ,  H01S5/2209 ,  H01S5/2275 ,  H01S5/32333 ,  H01S5/3403 ,  H01S5/3434

摘要： An optical device including: an optical waveguide; and a plurality of diffraction grating layers provided along the optical waveguide, wherein each of the diffraction grating layers comprises a diffraction grating, each diffraction grating comprising a discontinuous first semiconductor layer and a second semiconductor layer burying the first semiconductor layer, the first and second semiconductor layers having different refractive indices, the plurality of diffraction grating layers comprise at least two diffraction grating layers being different from each other in terms of the length of a region where the diffraction grating is provided, and the diffraction gratings in an overlap region of the plurality of diffraction grating layers have the same phase and period is provided.

摘要翻译： 一种光学装置，包括：光波导; 以及沿着光波导设置的多个衍射光栅层，其中每个衍射光栅层包括衍射光栅，每个衍射光栅包括不连续的第一半导体层和埋入第一半导体层的第二半导体层，第一和第二半导体 具有不同折射率的层，多个衍射光栅层包括至少两个衍射光栅层相对于设置有衍射光栅的区域的长度而彼此不同，并且多个衍射光栅层的重叠区域中的衍射光栅 的衍射光栅层具有相同的相位和周期。

公开(公告)号：US07791995B2

公开(公告)日：2010-09-07

申请号：US11668984

申请日：2007-01-30

申请人： Tsuyoshi Yamamoto ,  Katsuhiko Masuda ,  Shigefumi Morishima ,  Toru Tanaka

发明人： Tsuyoshi Yamamoto ,  Katsuhiko Masuda ,  Shigefumi Morishima ,  Toru Tanaka

IPC分类号： G11B7/00

CPC分类号： G11B7/0037

摘要： An image information detecting apparatus is disclosed that comprises: a semiconductor laser that emits a laser light beam; a light receiving unit that receives a reflected light beam of the laser light beam applied to a color changing layer of an optical disc, the color changing layer being formed from a photo-sensitive material of a heat-sensitive material, and that outputs an electrical signal corresponding to the level of the reflected light beam; and a detecting unit that detects image information based on the electric signal, wherein the image information detecting apparatus detects the image information indicating an image from the color changing layer after the image has been formed therein.

摘要翻译： 公开了一种图像信息检测装置，包括：发射激光的半导体激光器; 光接收单元，其接收施加到光盘的变色层的激光束的反射光束，所述变色层由感光材料的感光材料形成，并且输出电 信号对应于反射光束的电平; 以及检测单元，其基于所述电信号检测图像信息，其中所述图像信息检测装置在形成所述图像之后检测指示来自所述变色层的图像的图像信息。