公开(公告)号：US5917944A

公开(公告)日：1999-06-29

申请号：US751535

申请日：1996-11-15

申请人： Shinji Wakisaka ,  Hiroko Sato

发明人： Shinji Wakisaka ,  Hiroko Sato

IPC分类号： G06F17/27 ,  G06F17/28 ,  G06K9/20 ,  G06K9/34 ,  G10L15/20 ,  G10L21/02 ,  G06K9/46

CPC分类号： G06F17/2863 ,  G06F17/2755 ,  G06F17/2765 ,  G06F17/2872 ,  G06F17/289 ,  G06K9/2054 ,  G06K9/344 ,  G10L15/20 ,  G06K2209/01

摘要： A study system of a character recognizing and translating system is provided with a character data base for storing character data representing characters contained in a sensed image; a character shape analysis unit for analyzing the shape of a character to extract the features of character constituting elements constituting the character; and, a mask learning unit for generating sample mask data of the character constituting elements on the basis of the analysis result of the character shape analysis unit. A recognition system of the character recognizing and translating system is provided with a collating unit for collating the character data of a character to be recognized with the sample mask data so as to recognize the character.

摘要翻译： 字符识别和翻译系统的研究系统具有字符数据库，用于存储表示感测图像中包含的字符的字符数据; 字符形状分析单元，用于分析字符的形状以提取构成字符的字符构成元素的特征; 以及掩模学习单元，用于根据字符形状分析单元的分析结果产生字符构成元素的样本掩码数据。 字符识别和翻译系统的识别系统设置有对照单元，用于将要识别的字符的字符数据与样本掩码数据进行对照以识别字符。

公开(公告)号：US07427812B2

公开(公告)日：2008-09-23

申请号：US11078175

申请日：2005-03-11

申请人： Shinji Wakisaka ,  Hiroyasu Jobetto

发明人： Shinji Wakisaka ,  Hiroyasu Jobetto

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L23/5389 ,  H01L23/3114 ,  H01L23/49816 ,  H01L24/19 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00

摘要： The semiconductor device of the present invention has a semiconductor substrate having a top surface of a quadrangular shape on which a plurality of connection pads are formed, an insulation film formed on the semiconductor substrate except the connection pads, and a plurality of external connection electrodes formed on the insulation film so as to be connected to the connection pads. The plurality of external connection electrodes constitute at least a first group of external connection electrodes which are arranged on first lines running along each of the two diagonal lines of the semiconductor substrate and second group of external connection electrodes which are arranged on second lines running along the first lines outside the first lines as seen from the diagonal lines.

摘要翻译： 本发明的半导体器件具有半导体衬底，其具有形成有多个连接焊盘的四边形的顶表面，形成在除了连接焊盘之外的半导体衬底上的绝缘膜和形成的多个外部连接电极 在绝缘膜上连接到连接焊盘。 多个外部连接电极构成至少第一组外部连接电极，其布置在沿着半导体衬底的两个对角线中的每一条延伸的第一线和第二组外部连接电极上，第二组布置在沿着 从对角线看到的第一条线之外的第一条线。

公开(公告)号：US06631349B1

公开(公告)日：2003-10-07

申请号：US09554003

申请日：2000-05-09

申请人： Kazuyoshi Ishiwatari ,  Kazuo Kondo ,  Shinji Wakisaka

发明人： Kazuyoshi Ishiwatari ,  Kazuo Kondo ,  Shinji Wakisaka

IPC分类号： G10L1500

CPC分类号： G10L15/08 ,  G10L2015/025

摘要： Frames making up an input speech are each collated with a string of phonemes representing speech candidates to be recognized, whereby evaluation values regarding the phonemes are computed. The frames are each compared with part of the phoneme string so as to reduce computations and memory capacity required in recognizing the input speech based on the evaluation values. That is, each frame is compared with a portion of the phoneme string to acquire an evaluation value for each phoneme. If the acquired evaluation value meets a predetermined condition, part of the phonemes to be collated with the next frame are changed. Illustratively, if the evaluation value for the phoneme heading a given portion of collated phonemes is smaller than the evaluation value of the phoneme which terminates that phoneme portion, then the head phoneme is replaced by the next phoneme. The new portion of phonemes obtained by the replacement is used for collation with the next frame.

公开(公告)号：US06411929B1

公开(公告)日：2002-06-25

申请号：US09625855

申请日：2000-07-26

申请人： Kazuyoshi Ishiwatari ,  Kazuo Kondo ,  Shinji Wakisaka

发明人： Kazuyoshi Ishiwatari ,  Kazuo Kondo ,  Shinji Wakisaka

IPC分类号： G10L1500

CPC分类号： G10L15/08 ,  G10L2015/025

摘要： Frames making up an input speech are each collated with a string of phonemes representing speech candidates to be recognized, whereby evaluation values regarding the phonemes are computed. The frames are each compared with part of the phoneme string so as to reduce computations and memory capacity required in recognizing the input speech based on the evaluation values. That is, each frame is compared with a portion of the phoneme string to acquire an evaluation value for each phoneme. If the acquired evaluation value meets a predetermined condition, part of the phonemes to be collated with the next frame are changed. Illustratively, if the evaluation value for the phoneme heading a given portion of collated phonemes is smaller than the evaluation value of the phoneme which terminates that phoneme portion, then the head phoneme is replaced by the next phoneme. The new portion of phonemes obtained by the replacement is used for collation with the next frame.

摘要翻译： 构成输入语音的帧各自与表示要识别的语音候选的一系列音素进行对照，由此计算关于音素的评估值。 每个帧都与音素串的一部分进行比较，以便减少基于评估值识别输入语音所需的计算和存储器容量。 也就是说，将每帧与音素串的一部分进行比较，以获得每个音素的评估值。 如果所获取的评估值满足预定条件，则与下一帧对照的一部分音素被改变。 说明性地，如果引导整理音素的给定部分的音素的评价值小于终止该音素部分的音素的评价值，则头音素被下一个音素代替。 通过替换获得的新部分音素被用于与下一帧进行核对。

公开(公告)号：US20130320526A1

公开(公告)日：2013-12-05

申请号：US13960485

申请日：2013-08-06

申请人： Shinji Wakisaka ,  Takeshi Wakabayashi

发明人： Shinji Wakisaka ,  Takeshi Wakabayashi

IPC分类号： H01L23/00

CPC分类号： H01L24/49 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/28 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49838 ,  H01L23/50 ,  H01L23/525 ,  H01L23/5389 ,  H01L24/09 ,  H01L24/14 ,  H01L24/19 ,  H01L24/27 ,  H01L24/28 ,  H01L24/29 ,  H01L24/48 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05599 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/48151 ,  H01L2224/48491 ,  H01L2224/49 ,  H01L2224/73267 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/85399 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15173 ,  H01L2924/15311 ,  H01L2924/19043 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099 ,  H01L2224/214

摘要： A semiconductor construct includes a semiconductor substrate and connection pads provided on the semiconductor substrate. Some of the connection pads are connected to a common wiring and at least one of the remaining of the connection pads are connected to a wiring. The construct also includes a first columnar electrode provided to be connected to the common wiring and a second columnar electrode provided to be connected to a connection pad portion of the wiring.

公开(公告)号：USRE43380E1

公开(公告)日：2012-05-15

申请号：US12775378

申请日：2010-05-06

申请人： Shinji Wakisaka ,  Hiroyasu Jobetto ,  Takeshi Wakabayashi ,  Ichiro Mihara

发明人： Shinji Wakisaka ,  Hiroyasu Jobetto ,  Takeshi Wakabayashi ,  Ichiro Mihara

IPC分类号： H01L23/52

CPC分类号： H01L23/5389 ,  H01L24/18 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/49 ,  H01L24/82 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/18 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/4943 ,  H01L2224/82047 ,  H01L2224/83191 ,  H01L2224/838 ,  H01L2224/92 ,  H01L2225/0651 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A first semiconductor element is mounted on a base plate, and is in a sealed state by the periphery thereof being covered by an insulation member, and the upper surface thereof being covered by an upper insulation film. An upper wiring layer formed on the upper insulation film, and the lower wiring layer formed below the base plate via lower insulation films are connected by conductors. A second semiconductor element is mounted exposed, being connected to the lower wiring layer.

摘要翻译： 第一半导体元件安装在基板上，其周边处于密封状态，被绝缘部件覆盖，其上表面被上绝缘膜覆盖。 通过导体将形成在上绝缘膜上的上布线层和通过下绝缘膜形成在基板下方的下布线层连接。 第二半导体元件被暴露安装，连接到下布线层。

公开(公告)号：US07553698B2

公开(公告)日：2009-06-30

申请号：US11359851

申请日：2006-02-22

申请人： Takeshi Wakabayashi ,  Shinji Wakisaka

发明人： Takeshi Wakabayashi ,  Shinji Wakisaka

IPC分类号： H01L21/44

CPC分类号： H01L24/97 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/19 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/056 ,  H01L2224/05655 ,  H01L2224/12105 ,  H01L2224/2402 ,  H01L2224/24226 ,  H01L2224/274 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2924/00014

摘要： A semiconductor package includes at least one semiconductor constructing body which has a semiconductor substrate and a plurality of external connection electrodes formed thereon. An insulating film covers the semiconductor constructing body. Each of interconnections which has a projecting electrode is formed on the insulating film. The projecting electrodes of the interconnection cut through the insulating film at portions corresponding to the external connection electrodes and electrically connected to the external connection electrodes.

摘要翻译： 半导体封装包括至少一个具有半导体衬底和形成在其上的多个外部连接电极的半导体构造体。 绝缘膜覆盖半导体构造体。 在绝缘膜上形成具有突出电极的各互连线。 互连的突出电极在对应于外部连接电极的部分处切断绝缘膜并电连接到外部连接电极。

公开(公告)号：US20060141669A1

公开(公告)日：2006-06-29

申请号：US11359851

申请日：2006-02-22

申请人： Takeshi Wakabayashi ,  Shinji Wakisaka

发明人： Takeshi Wakabayashi ,  Shinji Wakisaka

IPC分类号： H01L21/50

CPC分类号： H01L24/97 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/19 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/056 ,  H01L2224/05655 ,  H01L2224/12105 ,  H01L2224/2402 ,  H01L2224/24226 ,  H01L2224/274 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2924/00014

摘要： A semiconductor package includes at least one semiconductor constructing body which has a semiconductor substrate and a plurality of external connection electrodes formed thereon. An insulating film covers the semiconductor constructing body. Each of interconnections which has a projecting electrode is formed on the insulating film. The projecting electrodes of the interconnection cut through the insulating film at portions corresponding to the external connection electrodes and electrically connected to the external connection electrodes.

公开(公告)号：US07042081B2

公开(公告)日：2006-05-09

申请号：US10940232

申请日：2004-09-13

申请人： Shinji Wakisaka ,  Hiroyasu Jobetto

发明人： Shinji Wakisaka ,  Hiroyasu Jobetto

IPC分类号： H01L23/12 ,  H01L23/34

CPC分类号： H01L24/83 ,  H01L23/3128 ,  H01L23/3677 ,  H01L23/49816 ,  H01L24/19 ,  H01L24/27 ,  H01L24/29 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/2518 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92244 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor constructing body which has a semiconductor substrate, a plurality of external connection electrodes formed on the semiconductor substrate, and heat dissipation columnar electrodes. Upper interconnections are mounted on one side of the semiconductor constructing body and connected to the external connection electrodes of the semiconductor constructing body. A heat dissipation layer is mounted on one side of the semiconductor constructing body and made of the same material as that of the upper interconnections.

摘要翻译： 半导体器件包括半导体构造体，其具有半导体衬底，形成在半导体衬底上的多个外部连接电极和散热柱状电极。 上部互连件安装在半导体构造体的一侧并连接到半导体构造体的外部连接电极。 散热层安装在半导体构造体的一侧，由与上部互连相同的材料制成。

公开(公告)号：US20050019982A1

公开(公告)日：2005-01-27

申请号：US10851880

申请日：2004-05-20

申请人： Takeshi Wakabayashi ,  Shinji Wakisaka

发明人： Takeshi Wakabayashi ,  Shinji Wakisaka

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/56 ,  H01L23/12 ,  H01L23/31 ,  H01L23/48 ,  H01L23/538 ,  H01L21/50

CPC分类号： H01L24/97 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/19 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/056 ,  H01L2224/05655 ,  H01L2224/12105 ,  H01L2224/2402 ,  H01L2224/24226 ,  H01L2224/274 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2924/00014

摘要： A semiconductor package includes at least one semiconductor constructing body which has a semiconductor substrate and a plurality of external connection electrodes formed thereon. An insulating film covers the semiconductor constructing body. Each of interconnections which has a projecting electrode is formed on the insulating film. The projecting electrodes of the interconnection cut through the insulating film at portions corresponding to the external connection electrodes and electrically connected to the external connection electrodes.

摘要翻译： 半导体封装包括至少一个具有半导体衬底和形成在其上的多个外部连接电极的半导体构造体。 绝缘膜覆盖半导体构造体。 在绝缘膜上形成具有突出电极的各互连线。 互连的突出电极在对应于外部连接电极的部分处切断绝缘膜并电连接到外部连接电极。