公开(公告)号：US07700940B2

公开(公告)日：2010-04-20

申请号：US10521544

申请日：2003-07-01

申请人： Shiro Sakai ,  Tomoya Sugahara

发明人： Shiro Sakai ,  Tomoya Sugahara

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

摘要： An LED emitting light of wavelength mainly 375 nm or below. The LED includes a GaN layer (16), an n-clad layer (20), an AlInGaN buffer layer (22), a light emitting layer (24), a p-clad layer (26), a p-electrode (30), and an n-electrode (32) arranged on a substrate (10). The light emitting layer (24) has a multi-layer quantum well structure (MQW) in which an InGaN well layer and an AlInGaN barrier layer are superimposed. The quantum well structure increases the effective band gap of the InGaN well layer and reduces the light emitting wavelength. Moreover, by using the AlInGaN buffer layer (22) as the underlying layer of the light emitting layer (24), it is possible to effectively inject electrons into the light emitting layer (24), thereby increasing the light emitting efficiency.

摘要翻译： 发射波长主要为375nm或以下的LED的LED。 LED包括GaN层（16），n覆盖层（20），AlInGaN缓冲层（22），发光层（24），p覆盖层（26），p电极（30） ）和布置在基板（10）上的n电极（32）。 发光层（24）具有叠层InGaN阱层和AlInGaN阻挡层的多层量子阱结构（MQW）。 量子阱结构增加了InGaN阱层的有效带隙并降低了发光波长。 此外，通过使用AlInGaN缓冲层（22）作为发光层（24）的下层，可以有效地将电子注入到发光层（24）中，从而提高发光效率。

公开(公告)号：US07667237B2

公开(公告)日：2010-02-23

申请号：US12478456

申请日：2009-06-04

申请人： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

发明人： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

IPC分类号： H01L33/00

CPC分类号： H01L27/156 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/24

摘要： A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

公开(公告)号：US07569861B2

公开(公告)日：2009-08-04

申请号：US12352271

申请日：2009-01-12

申请人： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

发明人： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

IPC分类号： H01L33/00 ,  H01L31/12

CPC分类号： H01L27/156 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/24

摘要： A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

摘要翻译： 在高驱动电压和小驱动电流下工作的发光装置。 LED（1）二次形成在例如蓝宝石的绝缘基板（10）上，并且串联连接以形成LED阵列。 两个这样的LED阵列反向并联连接到电极（32）。 在LED（1）之间以及LED（1）和电极（32）之间形成空气桥接线（28）。 LED阵列以Z字形排列以形成多个LED（1）以产生高驱动电压和小的驱动电流。 两个LED阵列相反并联连接，因此可以使用交流电源作为电源。

公开(公告)号：US20070138500A1

公开(公告)日：2007-06-21

申请号：US11705205

申请日：2007-02-12

申请人： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

发明人： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

IPC分类号： H01L33/00

CPC分类号： H01L27/156 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/24

摘要： A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

摘要翻译： 在高驱动电压和小驱动电流下工作的发光装置。 LED（1）二次形成在例如蓝宝石的绝缘基板（10）上，并且串联连接以形成LED阵列。 两个这样的LED阵列反向并联连接到电极（32）。 在LED（1）之间以及LED（1）和电极（32）之间形成空气桥接线（28）。 LED阵列以Z字形排列以形成多个LED（1）以产生高驱动电压和小的驱动电流。 两个LED阵列相反并联连接，因此可以使用交流电源作为电源。

公开(公告)号：US20070075046A1

公开(公告)日：2007-04-05

申请号：US11521504

申请日：2006-09-15

申请人： Hisaya Nakamura ,  Masakazu Harada ,  Shiro Sakai ,  Takaya Kondo ,  Tomohiro Shimada

发明人： Hisaya Nakamura ,  Masakazu Harada ,  Shiro Sakai ,  Takaya Kondo ,  Tomohiro Shimada

IPC分类号： H01H33/66

CPC分类号： C10M169/00 ,  C10M2201/041 ,  C10M2201/05 ,  C10M2201/062 ,  C10M2201/145 ,  C10M2203/1025 ,  C10M2203/1065 ,  C10M2205/0206 ,  C10M2207/0406 ,  C10M2207/1265 ,  C10M2207/2825 ,  C10M2207/2835 ,  C10M2209/1033 ,  C10M2215/1026 ,  C10N2210/01 ,  C10N2210/02 ,  C10N2210/03 ,  C10N2220/082 ,  C10N2240/202 ,  C10N2250/10

摘要： This method for inhibiting damage due to arc between electrical contacts involves the spreading of a grease composed of from 70% by weight to 95% by weight of a base oil and from 5% by weight to 30% by weight of a thickening agent and additives over a pair of electrical contacts in a circuit which causes terminals to move relative to each other so that they are disconnected from each other, whereby damage on the contact area due to arc occurring when the electrical contacts are isolated from each other is inhibited. As the thickening agent there is preferably used an organic bentonite. As the base oil there is preferably sued an ester oil, glycol oil or poly-α-olefin. The base oil preferably has a low density to reduce arc energy.

摘要翻译： 用于抑制由电触点之间的电弧引起的损伤的方法涉及由70重量％至95重量％的基础油和5重量％至30重量％的增稠剂和添加剂 在电路中的一对电触点之间，导致端子相对于彼此移动，使得它们彼此断开，从而抑制当电触点彼此隔离时由于电弧而导致的接触区域的损坏。 作为增稠剂，优选使用有机膨润土。 作为基础油，优选起始酯油，乙二醇油或聚-α-烯烃。 基础油优选具有低密度以减少电弧能量。

公开(公告)号：US08624291B2

公开(公告)日：2014-01-07

申请号：US13091581

申请日：2011-04-21

申请人： Shiro Sakai

发明人： Shiro Sakai

IPC分类号： H01L33/00

CPC分类号： H01L21/02527 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02521 ,  H01L21/0262 ,  H01L33/005 ,  H01L33/26

摘要： Embodiments of the invention provide a crystalline aluminum carbide thin film, a semiconductor substrate having the crystalline aluminum carbide thin film formed thereon, and a method of fabricating the same. Further, the method of fabricating the AlC thin film includes supplying a carbon containing gas and an aluminum containing gas to a furnace, to growing AlC crystals on a substrate.

公开(公告)号：US08481411B2

公开(公告)日：2013-07-09

申请号：US12929712

申请日：2011-02-10

申请人： Shiro Sakai

发明人： Shiro Sakai

IPC分类号： H01L21/20 ,  H01L21/311 ,  H01L21/461

CPC分类号： H01L21/0254 ,  C30B25/02 ,  C30B29/406 ,  H01L29/2003 ,  H01L33/0075

摘要： The present invention provides a method of fabricating a semiconductor substrate, the method including forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, etching the substrate using a solution to remove the metallic material layer and a portion of the first semiconductor layer, and forming a cavity in the first semiconductor layer under where the metallic material layer was removed.

摘要翻译： 本发明提供一种制造半导体衬底的方法，该方法包括在衬底上形成第一半导体层，在第一半导体层上形成金属材料层，在第一半导体层上形成第二半导体层，在金属材料层 使用溶液蚀刻所述基板以去除所述金属材料层和所述第一半导体层的一部分，以及在去除所述金属材料层的所述第一半导体层内形成空腔。

公开(公告)号：US20120258559A1

公开(公告)日：2012-10-11

申请号：US13507210

申请日：2012-06-13

申请人： Shiro Sakai

发明人： Shiro Sakai

IPC分类号： H01L33/32

CPC分类号： H01L21/0254 ,  C30B25/02 ,  C30B29/406 ,  H01L29/2003 ,  H01L33/0075

摘要： Exemplary embodiments of the present invention provide a method of fabricating a semiconductor substrate, the method including forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, etching the substrate using a solution to remove the metallic material layer and a portion of the first semiconductor layer, and forming a cavity in the first semiconductor layer under where the metallic material layer was removed.

摘要翻译： 本发明的示例性实施例提供一种制造半导体衬底的方法，该方法包括在衬底上形成第一半导体层，在第一半导体层上形成金属材料层，在第一半导体层上形成第二半导体层， 使用溶液蚀刻所述基板以去除所述金属材料层和所述第一半导体层的一部分，以及在去除所述金属材料层的第一半导体层内形成空腔。

公开(公告)号：US08097889B2

公开(公告)日：2012-01-17

申请号：US12352240

申请日：2009-01-12

申请人： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

发明人： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

IPC分类号： H01L33/00

CPC分类号： H01L27/156 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/24

摘要： A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

摘要翻译： 在高驱动电压和小驱动电流下工作的发光装置。 LED（1）二次形成在例如蓝宝石的绝缘基板（10）上，并且串联连接以形成LED阵列。 两个这样的LED阵列反向并联连接到电极（32）。 在LED（1）之间以及LED（1）和电极（32）之间形成空气桥接线（28）。 LED阵列以Z字形排列以形成多个LED（1）以产生高驱动电压和小的驱动电流。 两个LED阵列相反并联连接，因此可以使用交流电源作为电源。

公开(公告)号：US20100171136A1

公开(公告)日：2010-07-08

申请号：US12601165

申请日：2008-05-16

申请人： Shiro Sakai ,  Yoshiki Naoi

发明人： Shiro Sakai ,  Yoshiki Naoi

IPC分类号： H01L33/22 ,  H01L21/304

CPC分类号： H01L33/22 ,  H01L33/0095 ,  H01L33/44

摘要： The present invention provides a method of fabricating a light emitting diode, which comprises the steps of forming a compound semiconductor layer on a substrate, the compound semiconductor layer including a lower semiconductor layer, an active layer and an upper semiconductor layer; and scratching a surface of the substrate by rubbing the substrate with an abrasive. According to the present invention, the abrasive is used to rub and scratch the surface of the light emitting diode, thereby making it possible to cause the light emitted from the active layer to effectively exit to the outside. Therefore, the light extraction efficiency of the light emitting diode can be improved.

摘要翻译： 本发明提供一种制造发光二极管的方法，其包括以下步骤：在衬底上形成化合物半导体层，所述化合物半导体层包括下半导体层，有源层和上半导体层; 以及通过用研磨剂摩擦基材来刮擦基材的表面。 根据本发明，研磨剂用于擦拭和划伤发光二极管的表面，从而使得可以使从有源层发射的光有效地离开到外部。 因此，可以提高发光二极管的光提取效率。