公开(公告)号：US08981210B2

公开(公告)日：2015-03-17

申请号：US13696328

申请日：2010-06-25

申请人： Shoichi Karakida

发明人： Shoichi Karakida

IPC分类号： H01L31/00 ,  H01L21/00 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Included are a semiconductor substrate including, on one surface side, a dopant diffusion layer, a light-receiving surface side electrode electrically connected to the dopant diffusion layer and formed on the one surface side of the semiconductor substrate, and a rear surface side electrode formed on the other surface side of the semiconductor substrate. A first unevenness structure including first projected sections each having a square pyramid shape in a light-receiving surface side electrode formation region in which the light-receiving surface side electrode is formed on the one surface side of the semiconductor substrate including the dopant diffusion layer. A second unevenness structure including second projected sections each having a square pyramid shape larger than the first projected sections in a region where the light-receiving surface side electrode is not formed on the one surface side of the semiconductor substrate including the dopant diffusion layer.

摘要翻译： 包括半导体衬底，其在一个表面侧包括掺杂剂扩散层，电连接到掺杂剂扩散层并形成在半导体衬底的一个表面侧上的光接收表面侧电极和形成的后表面侧电极 在半导体衬底的另一表面侧。 在包含掺杂剂扩散层的半导体衬底的一个表面侧上形成有受光面侧电极的受光面侧电极形成区域中，形成有具有方形金字塔状的第一突出部的第一凹凸结构。 第二凹凸结构包括在包含掺杂剂扩散层的半导体衬底的一个表面侧上没有形成光接收表面侧电极的区域中具有比第一突出部分大的方形金字塔形状的第二突出部分。

公开(公告)号：US20130048073A1

公开(公告)日：2013-02-28

申请号：US13696328

申请日：2010-06-25

申请人： Shoichi Karakida

发明人： Shoichi Karakida

IPC分类号： H01L31/0236 ,  H01L31/18

CPC分类号： H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Included are a semiconductor substrate including, on one surface side, a dopant diffusion layer, a light-receiving surface side electrode electrically connected to the dopant diffusion layer and formed on the one surface side of the semiconductor substrate, and a rear surface side electrode formed on the other surface side of the semiconductor substrate. A first unevenness structure including first projected sections each having a square pyramid shape in a light-receiving surface side electrode formation region in which the light-receiving surface side electrode is formed on the one surface side of the semiconductor substrate including the dopant diffusion layer. A second unevenness structure including second projected sections each having a square pyramid shape larger than the first projected sections in a region where the light-receiving surface side electrode is not formed on the one surface side of the semiconductor substrate including the dopant diffusion layer.

摘要翻译： 包括半导体衬底，其在一个表面侧包括掺杂剂扩散层，电连接到掺杂剂扩散层并形成在半导体衬底的一个表面侧上的光接收表面侧电极和形成的后表面侧电极 在半导体衬底的另一表面侧。 在包含掺杂剂扩散层的半导体衬底的一个表面侧上形成有受光面侧电极的受光面侧电极形成区域中，形成有具有方形金字塔状的第一突出部的第一凹凸结构。 第二凹凸结构包括在包含掺杂剂扩散层的半导体衬底的一个表面侧上没有形成光接收表面侧电极的区域中具有比第一突出部分大的方形金字塔形状的第二突出部分。

公开(公告)号：US20080223351A1

公开(公告)日：2008-09-18

申请号：US11884121

申请日：2005-05-11

申请人： Hiroaki Morikawa ,  Shoichi Karakida ,  Takafumi Kawasaki

发明人： Hiroaki Morikawa ,  Shoichi Karakida ,  Takafumi Kawasaki

IPC分类号： B28D1/00

CPC分类号： B28D5/007 ,  B28D5/045 ,  C09K3/1463 ,  Y02P70/179

摘要： In a method of producing silicon blocks by cutting a silicon ingot by the use of a silicon ingot cutting slurry containing abrasive grains and an alkaline substance so as to provide the silicon blocks that can be produced into silicon wafers each having a thin thickness with reduced substrate damage at the time of producing a solar battery, the content of said alkaline substance is at least 3.5 mass % with respect to the mass of the entire liquid components of said slurry, and said slurry contains an organic amine of from 0.5 to 5.0 by a mass ratio with respect to water in the liquid components of said slurry. Said slurry is used at a pH of 12 or more and at a temperature of from 65 to 95 degrees C.

摘要翻译： 在通过使用含有磨粒和碱性物质的硅锭切割浆料切割硅锭的方法来制造硅块的方法，以便将可生产的硅块提供到具有减薄衬底的薄厚度的硅片中 在制造太阳能电池时的损伤，所述碱性物质的含量相对于所述浆料的整个液体成分的质量为至少3.5质量％，所述浆料含有0.5〜5.0的有机胺， 相对于所述浆料的液体组分中的水的质量比。 所述浆液的pH为12以上，温度为65〜95℃。

公开(公告)号：US20150056743A1

公开(公告)日：2015-02-26

申请号：US14379851

申请日：2012-03-12

申请人： Shoichi Karakida

发明人： Shoichi Karakida

IPC分类号： H01L31/18 ,  H01L31/0236

CPC分类号： H01L31/18 ,  B23K26/0661 ,  B23K26/18 ,  B23K26/388 ,  B23K26/389 ,  B23K26/40 ,  B23K2101/38 ,  B23K2101/40 ,  B23K2103/50 ,  H01L31/02363 ,  Y02E10/50

摘要： A manufacturing method of a solar cell includes a protection-film forming step of forming a protection film on one surface side of a semiconductor substrate, a first processing step of forming a plurality of first openings having a shape close to a desired opening shape and a size smaller than a target opening size in the protection film by a method having relatively high processing efficiency, a second processing step of forming second openings in the protection film by expanding the first openings up to the target opening size by a method having relatively high processing accuracy, and an etching step of forming an asperity structure having the a concave portion in an inverted pyramid shape on the one surface side of the semiconductor substrate by performing anisotropic wet etching on the semiconductor substrate in a region under the second openings via the second openings.

摘要翻译： 太阳能电池的制造方法包括在半导体衬底的一个表面侧形成保护膜的保护膜形成步骤，形成多个第一开口的第一处理步骤，所述第一开口具有接近期望的开口形状的形状，以及 通过具有较高处理效率的方法在保护膜中小于目标开口尺寸的尺寸;第二处理步骤，通过用相对较高处理的方法将第一开口扩大到目标开口尺寸，从而在保护膜中形成第二开口 精度和蚀刻步骤，通过经由第二开口在第二开口下方的区域中的半导体衬底上进行各向异性湿法蚀刻，在半导体衬底的一个表面侧上形成具有倒金字塔形状的凹部的凹凸结构 。

公开(公告)号：US07591712B2

公开(公告)日：2009-09-22

申请号：US11884121

申请日：2005-05-11

申请人： Hiroaki Morikawa ,  Shoichi Karakida ,  Takafumi Kawasaki

发明人： Hiroaki Morikawa ,  Shoichi Karakida ,  Takafumi Kawasaki

IPC分类号： B24B1/00

CPC分类号： B28D5/007 ,  B28D5/045 ,  C09K3/1463 ,  Y02P70/179

摘要： A method of producing silicon blocks by cutting a silicon ingot is provided. The method uses a silicon ingot cutting slurry containing abrasive grains and an alkaline substance so as to provide the silicon blocks that can be produced into silicon wafers each having a thin thickness with reduced substrate damage at the time of producing a solar battery. The alkaline substance has a content mass that is at least 3.5% with respect to the mass of the entire liquid components of said slurry, and the slurry contains an organic amine having a mass ratio of 0.5 to 5.0 with respect to water in the liquid components of the slurry. The slurry is used at a pH of 12 or more and at a temperature of from 65 to 95 degrees C.

摘要翻译： 提供了通过切割硅锭来生产硅块的方法。 该方法使用含有磨料颗粒和碱性物质的硅锭切割浆料，以便在生产太阳能电池时提供可以生产成硅晶片的硅块，每个硅片具有薄的厚度，并降低衬底损伤。 碱性物质的含量相对于所述浆料的整个液体组分的质量为至少3.5％，并且所述浆料包含相对于液体组分中的水的质量比为0.5至5.0的有机胺 的浆料。 该浆液的pH为12以上，温度为65〜95℃。

公开(公告)号：US20070209697A1

公开(公告)日：2007-09-13

申请号：US11578063

申请日：2004-05-07

申请人： Shoichi Karakida ,  Hiroaki Morikawa

发明人： Shoichi Karakida ,  Hiroaki Morikawa

IPC分类号： H01L31/00

CPC分类号： H01L31/1804 ,  H01L31/022425 ,  H01L31/02363 ,  Y02E10/547 ,  Y02P70/521

摘要： When forming an electrode by printing several times, the cross section area of the electrode is increased and the resistance is reduced while more electrode material is required, which leads to a cost up and waste of resources. There is provided a solar cell manufacturing method for forming an electrode of a predetermined pattern by repeating printing on a substrate surface by a predetermined number of times. A mask pattern for printing the entire predetermined pattern is used at least once among the predetermined number of printings while mask patterns, each for printing a part of the predetermined pattern, are used in the other printings, thereby forming the electrode of the predetermined pattern.

摘要翻译： 当通过打印几次形成电极时，电极的横截面面积增加并且电阻降低，同时需要更多的电极材料，这导致成本增加和浪费资源。 提供一种用于通过在基板表面上重复打印预定次数来形成预定图案的电极的太阳能电池制造方法。 用于打印整个预定图案的掩模图案在预定数量的打印中至​​少使用一次，而在其他打印中使用用于打印预定图案的一部分的掩模图案，从而形成预定图案的电极。

公开(公告)号：US5589110A

公开(公告)日：1996-12-31

申请号：US533462

申请日：1995-09-25

申请人： Takashi Motoda ,  Shoichi Karakida ,  Nobuaki Kaneno ,  Shigeki Kageyama

发明人： Takashi Motoda ,  Shoichi Karakida ,  Nobuaki Kaneno ,  Shigeki Kageyama

IPC分类号： C30B35/00 ,  C23C16/448 ,  C30B25/14 ,  H01L21/205 ,  H01L21/365 ,  B01F3/04

CPC分类号： C23C16/45561 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4485 ,  C30B25/14 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262

摘要： A metal organic compound container apparatus for containing a liquid metal organic compound, receiving a carrier gas, and producing a carrier gas stream saturated with vapor of the metal organic compound including a container for containing a liquid metal organic compound; an inlet pipe for introducing a carrier gas into the container, the inlet pipe having an end for immersion in the metal organic compound; a carrier gas flow rate controller for controlling carrier gas flow into the inlet pipe; a first exhaust pipe for exhausting carrier gas from the container at a first flow rate, the first exhaust pipe having an end not contacting the metal organic compound; a first gas flow rate controller for controlling one of pressure and the first flow rate of the carrier gas through the first exhaust pipe; a second exhaust pipe for exhausting carrier gas from the container at a second flow rate, the second exhaust pipe having an end not contacting the metal organic compound; and a second gas flow rate controller for controlling the second flow rate.

摘要翻译： 一种金属有机化合物容器装置，用于容纳液体金属有机化合物，接收载气，并制备包含含有液态金属有机化合物的容器的金属有机化合物饱和的载气流; 用于将载气引入容器的入口管，所述入口管具有用于浸入所述金属有机化合物的端部; 用于控制载气流入入口管的载气流量控制器; 第一排气管，其以第一流量从所述容器排出载气，所述第一排气管的端部不接触所述金属有机化合物; 第一气体流量控制器，用于控制通过第一排气管的载气的压力和第一流量之一; 第二排气管，用于以第二流量从所述容器排出载气，所述第二排气管具有不接触所述金属有机化合物的端部; 以及用于控制第二流量的第二气体流量控制器。

公开(公告)号：US08936949B2

公开(公告)日：2015-01-20

申请号：US13388517

申请日：2009-08-26

申请人： Shoichi Karakida

发明人： Shoichi Karakida

IPC分类号： H01L21/66 ,  H01L21/00 ,  H01L31/0224 ,  H01L31/068 ,  G01R31/26

CPC分类号： H01L31/022433 ,  H01L31/068 ,  H02S50/10 ,  Y02E10/547

摘要： A manufacturing method of a solar cell in which a light receiving side electrode including grid electrodes is provided on one side of a semiconductor substrate, comprises: a first step of forming an impurity diffusion layer on one side of the semiconductor substrate of a first conductivity type, the diffusion layer having a second conductivity-type impurity diffused therein; a second step of measuring a sheet resistance value of the diffusion layer at a plurality of measurement points in a surface of the diffusion layer; and a third step of dividing the surface of the diffusion layer into a plurality of areas corresponding to the measured sheet resistance values of the surface of the diffusion layer, setting a distance between adjacent grid electrodes for each of the areas, and forming the light receiving side electrode, which is electrically connected to the diffusion layer, on the diffusion layer.

摘要翻译： 一种太阳能电池的制造方法，其特征在于，在半导体基板的一侧设置有包含栅极的受光侧电极的太阳能电池的制造方法，所述制造方法包括：在所述半导体基板的一侧形成第一导电型的杂质扩散层的第一工序 所述扩散层具有在其中扩散的第二导电型杂质; 在扩散层的表面的多个测量点处测量扩散层的薄层电阻值的第二步骤; 以及第三步骤，将扩散层的表面划分成与扩散层的表面的测量的薄层电阻值相对应的多个区域，设定每个区域的相邻格栅电极之间的距离，并形成光接收 与扩散层电连接的侧面电极。

公开(公告)号：US20140162383A1

公开(公告)日：2014-06-12

申请号：US14233895

申请日：2011-08-02

申请人： Shoichi Karakida

发明人： Shoichi Karakida

IPC分类号： H01L21/66 ,  H01L31/0236

CPC分类号： H01L22/12 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： The invention includes: a first process of forming a texture structure on both surfaces of a semiconductor substrate of a first conductivity type; a second process of measuring a reflectance distribution of the both surfaces of the semiconductor substrate on which the texture structure is formed; a third process of forming an impurity diffusion layer, in which an impurity element of a second conductivity type is diffused, on one of the both surfaces of the semiconductor substrate which is narrower in the reflectance distribution; a fourth process of forming, on the impurity diffusion layer, a light receiving surface-side electrode having a predetermined pattern and electrically connected to the impurity diffusion layer; and a fifth process of forming a back surface-side electrode on another of the both surfaces of the semiconductor substrate which is wider in the reflectance distribution.

摘要翻译： 本发明包括：在第一导电类型的半导体衬底的两个表面上形成纹理结构的第一工艺; 测量其上形成纹理结构的半导体衬底的两个表面的反射率分布的第二过程; 形成杂质扩散层的第三工序，其中第二导电类型的杂质元素扩散到半导体衬底的两个反射率分布较窄的一个表面上; 在杂质扩散层上形成具有预定图案并与该杂质扩散层电连接的受光面侧电极的第四工序; 以及在反射率分布更宽的半导体衬底的两个表面的另一表面上形成背面侧电极的第五工序。

公开(公告)号：US08106291B2

公开(公告)日：2012-01-31

申请号：US11578063

申请日：2004-05-07

申请人： Shoichi Karakida ,  Hiroaki Morikawa

发明人： Shoichi Karakida ,  Hiroaki Morikawa

IPC分类号： H01L31/0224

CPC分类号： H01L31/1804 ,  H01L31/022425 ,  H01L31/02363 ,  Y02E10/547 ,  Y02P70/521

摘要： When forming an electrode by printing several times, the cross section area of the electrode is increased and the resistance is reduced while more electrode material is required, which leads to a cost up and waste of resources. There is provided a solar cell manufacturing method for forming an electrode of a predetermined pattern by repeating printing on a substrate surface by a predetermined number of times. A mask pattern for printing the entire predetermined pattern is used at least once among the predetermined number of printings while mask patterns, each for printing a part of the predetermined pattern, are used in the other printings, thereby forming the electrode of the predetermined pattern.

摘要翻译： 当通过打印几次形成电极时，电极的横截面面积增加并且电阻降低，同时需要更多的电极材料，这导致成本增加和浪费资源。 提供一种用于通过在基板表面上重复打印预定次数来形成预定图案的电极的太阳能电池制造方法。 用于打印整个预定图案的掩模图案在预定数量的打印中至​​少使用一次，而在其他打印中使用用于打印预定图案的一部分的掩模图案，从而形成预定图案的电极。