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5368 条记录 (耗时 0.061 秒)

    Semiconductor device
    15.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09136388B2

    公开(公告)日：2015-09-15

    申请号：US13549867

    申请日：2012-07-16

    申请人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tatsuya Honda ,  Takehisa Hatano

    发明人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tatsuya Honda ,  Takehisa Hatano

    IPC分类号： H01L29/26 ,  H01L29/786

    CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/78618

    摘要： Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.

    摘要翻译： 提供了能够实现所谓的常关断开关元件的晶体管的结构及其制造方法。 提供了通过提高晶体管的特性实现高速响应和高速操作的半导体器件的结构及其制造方法。 提供了一种高度可靠的半导体器件。 在其中半导体层，源极和漏极电极层，栅极绝缘层和栅极电极层以该顺序堆叠的晶体管中。 作为半导体层，含有铟，镓，锌和氧中的至少四种元素的氧化物半导体层，铟的组成比（原子百分比）为镓和a的组成比的两倍以上 使用锌的组成比。

    Semiconductor element and method for manufacturing the same
    16.
    发明授权
    Semiconductor element and method for manufacturing the same 有权
    半导体元件及其制造方法

    公开(公告)号：US09171938B2

    公开(公告)日：2015-10-27

    申请号：US12888835

    申请日：2010-09-23

    申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

    发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

    IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786

    CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/7869

    摘要： An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.

    摘要翻译： 目的在于提供一种薄膜晶体管及其制造方法，该薄膜晶体管包括具有受控阈值电压，高操作速度，相对容易的制造工艺以及足够的可靠性的氧化物半导体。 可以消除影响氧化物半导体层中的载流子浓度的杂质，例如氢原子或含有氢原子如H 2 O的化合物。 可以与氧化物半导体层接触形成含有大量缺陷的氧化物绝缘层，例如悬挂键，使得杂质扩散到氧化物绝缘层中，并且氧化物半导体层中的杂质浓度降低。 与氧化物半导体层接触的氧化物半导体层或氧化物绝缘层可以在使用低温泵抽真空的沉积室中形成，从而杂质浓度降低。

    Method for manufacturing SOI substrate
    17.
    发明授权
    Method for manufacturing SOI substrate 有权

    公开(公告)号：US08629030B2

    公开(公告)日：2014-01-14

    申请号：US13411864

    申请日：2012-03-05

    申请人： Takeshi Shichi ,  Junichi Koezuka ,  Hideto Ohnuma ,  Shunpei Yamazaki

    发明人： Takeshi Shichi ,  Junichi Koezuka ,  Hideto Ohnuma ,  Shunpei Yamazaki

    IPC分类号： H01L21/33 ,  H01L21/8222

    摘要： The present invention provides a method for manufacturing an SOI substrate, to improve planarity of a surface of a single crystal semiconductor layer after separation by favorably separating a single crystal semiconductor substrate even in the case where a non-mass-separation type ion irradiation method is used, and to improve planarity of a surface of a single crystal semiconductor layer after separation as well as to improve throughput. The method includes the steps of irradiating a single crystal semiconductor substrate with accelerated ions by an ion doping method while the single crystal semiconductor substrate is cooled to form an embrittled region in the single crystal semiconductor substrate; bonding the single crystal semiconductor substrate and a base substrate with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate along the embrittled region to form a single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween.

    Semiconductor device and method for manufacturing the same
    19.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07851332B2

    公开(公告)日：2010-12-14

    申请号：US12237606

    申请日：2008-09-25

    申请人： Shunpei Yamazaki ,  Junichi Koezuka ,  Tetsuya Kakehata

    发明人： Shunpei Yamazaki ,  Junichi Koezuka ,  Tetsuya Kakehata

    IPC分类号： H01L21/00

    CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L29/42384 ,  H01L29/66772 ,  H01L29/78621

    摘要： A semiconductor device including a semiconductor substrate is provided. The semiconductor substrate includes a substrate having an insulating surface, and a plurality of stacks over the substrate having an insulating surface. Each of the plurality of stacks includes a bonding layer over the substrate having an insulating surface, an insulating layer over the bonding layer, and a single crystal semiconductor layer over the insulating layer. The substrate having an insulating surface has a depression, and the depression is provided between one of the plurality of stacks and another adjacent one of the plurality of stacks.

    摘要翻译： 提供了包括半导体衬底的半导体器件。 半导体衬底包括具有绝缘表面的衬底和在衬底上的多个堆叠，其具有绝缘表面。 多个堆叠中的每一个在基板上包括具有绝缘表面的接合层，接合层上的绝缘层以及绝缘层上的单晶半导体层。 具有绝缘表面的基板具有凹陷，并且凹陷设置在多个叠层中的一个和多个叠层中的另一个相邻的堆叠之间。