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    SEMICONDUCTOR FILM, SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
    13.
    发明申请
    SEMICONDUCTOR FILM, SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体膜，半导体元件，半导体器件及其制造方法

    公开(公告)号：US20120132907A1

    公开(公告)日：2012-05-31

    申请号：US13303543

    申请日：2011-11-23

    申请人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

    发明人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

    IPC分类号： H01L29/22 ,  H01L21/34

    CPC分类号： H01L29/7869 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02513 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0259 ,  H01L29/78681

    摘要： One of objects is to provide a semiconductor film having stable characteristics. Further, one of objects is to provide a semiconductor element having stable characteristics. Further, one of objects is to provide a semiconductor device having stable characteristics. Specifically, a structure which includes a seed crystal layer (seed layer) including crystals each having a first crystal structure, one of surfaces of which is in contact with an insulating surface, and an oxide semiconductor film including crystals growing anisotropically, which is on the other surface of the seed crystal layer (seed layer) may be provided. With such a heterostructure, electric characteristics of the semiconductor film can be stabilized.

    摘要翻译： 目的之一是提供具有稳定特性的半导体膜。 此外，目的之一是提供具有稳定特性的半导体元件。 此外，目的之一是提供一种具有稳定特性的半导体器件。 具体而言，包括具有第一晶体结构的晶体的晶种层（晶种层）的晶种层（其表面与绝缘面接触）的结构，以及包含各向异性生长的晶体的氧化物半导体膜， 可以提供晶种层（籽晶层）的其他表面。 利用这种异质结构，可以使半导体膜的电特性稳定。

    Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
    14.
    发明授权
    Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device 有权
    氧化物半导体膜的制造方法及半导体装置的制造方法

    公开(公告)号：US08748223B2

    公开(公告)日：2014-06-10

    申请号：US12888846

    申请日：2010-09-23

    申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

    发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

    IPC分类号： H01L21/00 ,  H01L21/16

    CPC分类号： H01L29/66742 ,  C23C14/086 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/7869

    摘要： An object is to provide an oxide semiconductor having stable electric characteristics and a semiconductor device including the oxide semiconductor. A manufacturing method of a semiconductor film by a sputtering method includes the steps of holding a substrate in a treatment chamber which is kept in a reduced-pressure state; heating the substrate at lower than 400° C.; introducing a sputtering gas from which hydrogen and moisture are removed in the state where remaining moisture in the treatment chamber is removed; and forming an oxide semiconductor film over the substrate with use of a metal oxide which is provided in the treatment chamber as a target. When the oxide semiconductor film is formed, remaining moisture in a reaction atmosphere is removed; thus, the concentration of hydrogen and the concentration of hydride in the oxide semiconductor film can be reduced. Thus, the oxide semiconductor film can be stabilized.

    摘要翻译： 目的是提供具有稳定电特性的氧化物半导体和包括氧化物半导体的半导体器件。 通过溅射法制造半导体膜的方法包括将基板保持在保持在减压状态的处理室中的步骤; 在低于400℃下加热基材。 在去除处理室中的剩余水分的状态下引入除去氢气和水分的溅射气体; 以及使用设置在处理室中的金属氧化物作为目标，在基板上形成氧化物半导体膜。 当形成氧化物半导体膜时，除去反应气氛中的剩余水分; 因此，可以降低氧化物半导体膜中的氢浓度和氢化物浓度。 因此，可以使氧化物半导体膜稳定。

    Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
    15.
    发明授权
    Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same 有权
    半导体膜，半导体元件，半导体器件及其制造方法

    公开(公告)号：US08809852B2

    公开(公告)日：2014-08-19

    申请号：US13303543

    申请日：2011-11-23

    申请人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

    发明人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

    IPC分类号： H01L29/10

    CPC分类号： H01L29/7869 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02513 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0259 ,  H01L29/78681

    摘要： One of objects is to provide a semiconductor film having stable characteristics. Further, one of objects is to provide a semiconductor element having stable characteristics. Further, one of objects is to provide a semiconductor device having stable characteristics. Specifically, a structure which includes a seed crystal layer (seed layer) including crystals each having a first crystal structure, one of surfaces of which is in contact with an insulating surface, and an oxide semiconductor film including crystals growing anisotropically, which is on the other surface of the seed crystal layer (seed layer) may be provided. With such a heterostructure, electric characteristics of the semiconductor film can be stabilized.

    摘要翻译： 目的之一是提供具有稳定特性的半导体膜。 此外，目的之一是提供具有稳定特性的半导体元件。 此外，目的之一是提供一种具有稳定特性的半导体器件。 具体而言，包括具有第一晶体结构的晶体的晶种层（晶种层）的晶种层（其表面与绝缘面接触）的结构，以及包含各向异性生长的晶体的氧化物半导体膜， 可以提供晶种层（籽晶层）的其他表面。 利用这种异质结构，可以使半导体膜的电特性稳定。

    Semiconductor element and method for manufacturing the same
    16.
    发明授权
    Semiconductor element and method for manufacturing the same 有权
    半导体元件及其制造方法

    公开(公告)号：US09171938B2

    公开(公告)日：2015-10-27

    申请号：US12888835

    申请日：2010-09-23

    申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

    发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

    IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786

    CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/7869

    摘要： An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.

    摘要翻译： 目的在于提供一种薄膜晶体管及其制造方法，该薄膜晶体管包括具有受控阈值电压，高操作速度，相对容易的制造工艺以及足够的可靠性的氧化物半导体。 可以消除影响氧化物半导体层中的载流子浓度的杂质，例如氢原子或含有氢原子如H 2 O的化合物。 可以与氧化物半导体层接触形成含有大量缺陷的氧化物绝缘层，例如悬挂键，使得杂质扩散到氧化物绝缘层中，并且氧化物半导体层中的杂质浓度降低。 与氧化物半导体层接触的氧化物半导体层或氧化物绝缘层可以在使用低温泵抽真空的沉积室中形成，从而杂质浓度降低。

    Semiconductor device and method for manufacturing semiconductor device
    18.
    发明授权
    Semiconductor device and method for manufacturing semiconductor device 有权
    半导体装置及半导体装置的制造方法

    公开(公告)号：US08728883B2

    公开(公告)日：2014-05-20

    申请号：US13297474

    申请日：2011-11-16

    申请人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

    发明人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

    IPC分类号： H01L21/84 ,  H01L29/66

    CPC分类号： H01L29/06 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0259 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

    摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.

    摘要翻译： 通过向其中使用氧化物半导体膜的通道的晶体管提供稳定的电特性来制造高度可靠的半导体器件。 通过热处理可以具有第一晶体结构的氧化物半导体膜和通过热处理可以具有第二晶体结构的氧化物半导体膜被形成为堆叠，然后进行热处理; 因此，通过使用具有第二晶体结构的氧化物半导体膜作为种子发生晶体生长，从而形成具有第一晶体结构的氧化物半导体膜。 以这种方式形成的氧化物半导体膜用于晶体管的有源层。