公开(公告)号：US08338827B2

公开(公告)日：2012-12-25

申请号：US12612021

申请日：2009-11-04

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

IPC分类号： H01L29/10

CPC分类号： H01L29/66742 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

摘要： In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.

摘要翻译： 在使用氧化物半导体的薄膜晶体管中，在氧化物半导体层和源极和漏极电极层之间设置包含铟，镓，锌，氧和氮的缓冲层。

公开(公告)号：US09202827B2

公开(公告)日：2015-12-01

申请号：US12641446

申请日：2009-12-18

申请人： Jun Koyama ,  Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

发明人： Jun Koyama ,  Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

IPC分类号： H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1255 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/127 ,  H01L28/20 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869

摘要： The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

摘要翻译： 通过使用含有氢化合物如硅烷（SiH 4）和氨（NH 3）的气体的等离子体CVD形成的氮化硅层910设置在与用于电阻器354的氧化物半导体层905上并直接接触，并且氮化硅 在用于薄膜晶体管355的氧化物半导体层906上设置层910，氧化硅层909用作阻挡层。 因此，与氧化物半导体层906相比，在氧化物半导体层905中引入更高浓度的氢。结果，使用于电阻器354的氧化物半导体层905的电阻比氧化物半导体层的电阻低 906用于薄膜晶体管355。

公开(公告)号：US08378393B2

公开(公告)日：2013-02-19

申请号：US12609032

申请日：2009-10-30

申请人： Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

发明人： Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

IPC分类号： H01L29/78

CPC分类号： C23C14/5846 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  C23C14/0057 ,  C23C14/0676 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869

摘要： An electrode formed using a transparent conductive oxide is likely to be crystallized by heat treatment performed in the manufacturing process of a semiconductor device. In the case of a thin film element using an electrode having a significantly uneven surface due to crystallization, a short circuit is likely to occur and thus reliability of the element is degraded. An object is to provide a light-transmitting conductive oxynitride which is not crystallized even if subjected to heat treatment and a manufacturing method thereof. It is found that an oxynitride containing indium, gallium, and zinc, to which hydrogen atoms are added as impurities, is a light-transmitting conductive film which is not crystallized even if heated at 350° C. and the object is achieved.

摘要翻译： 使用透明导电氧化物形成的电极可能通过在半导体器件的制造过程中进行的热处理而结晶化。 在使用由于结晶而具有显着不平坦表面的电极的薄膜元件的情况下，可能发生短路，因此元件的可靠性降低。 本发明的目的是提供即使经受热处理也不结晶的透光导电氮氧化物及其制造方法。 发现含有氢原子作为杂质的含有铟，镓和锌的氮氧化物是透光性导电膜，即使在350℃下加热也不会结晶，实现了目的。

公开(公告)号：US08936965B2

公开(公告)日：2015-01-20

申请号：US13295469

申请日：2011-11-14

申请人： Yuki Imoto ,  Yuji Asano ,  Tetsunori Maruyama

发明人： Yuki Imoto ,  Yuji Asano ,  Tetsunori Maruyama

IPC分类号： H01L51/40 ,  H01L29/786 ,  H01L29/49 ,  H01L51/05 ,  H01L29/423 ,  H01L29/66 ,  H01L21/8234

CPC分类号： H01L29/7869 ,  H01L21/823456 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66742 ,  H01L29/66969 ,  H01L51/0554

摘要： A normally-off transistor having an oxide semiconductor layer in a channel formation layer is provided. The transistor comprises: a first oxide semiconductor layer functioning as a channel formation region; a source electrode layer and a drain electrode layer which overlap with the first oxide semiconductor layer; a gate insulating layer which is provided over and in contact with the first oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a second oxide semiconductor layer which is provided over and in contact with the gate insulating layer and overlaps with the first oxide semiconductor layer; and a gate electrode layer provided over the second oxide semiconductor layer. A manufacturing method thereof is also disclosed.

摘要翻译： 提供了在通道形成层中具有氧化物半导体层的常关晶体管。 晶体管包括：用作沟道形成区域的第一氧化物半导体层; 源极电极层和与第一氧化物半导体层重叠的漏电极层; 栅极绝缘层，设置在第一氧化物半导体层上，与源极电极层和漏极电极层接触; 第二氧化物半导体层，设置在栅极绝缘层上并与栅极绝缘层接触并与第一氧化物半导体层重叠; 以及设置在所述第二氧化物半导体层上的栅电极层。 还公开了其制造方法。

公开(公告)号：US08338226B2

公开(公告)日：2012-12-25

申请号：US12748520

申请日：2010-03-29

申请人： Yuji Asano ,  Junichi Koezuka

发明人： Yuji Asano ,  Junichi Koezuka

IPC分类号： H01L21/20

CPC分类号： H01L29/7869 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618

摘要： An object is to provide a thin film transistor including an oxide semiconductor layer, in which the contact resistance between the oxide semiconductor layer and source and drain electrode layers is reduced and whose electric characteristics are stabilized. Another object is to provide a method for manufacturing the thin film transistor. The thin film transistor including an oxide semiconductor layer is formed in such a manner that buffer layers whose conductivity is higher than that of the oxide semiconductor layer are formed and the oxide semiconductor layer and the source and drain electrode layers are electrically connected to each other through the buffer layers. In addition, the buffer layers whose conductivity is higher than that of the oxide semiconductor layer are subjected to reverse sputtering treatment and heat treatment in a nitrogen atmosphere.

摘要翻译： 目的是提供一种薄膜晶体管，其包括氧化物半导体层，其中氧化物半导体层与源极和漏极电极层之间的接触电阻降低并且其电特性稳定。 另一个目的是提供制造薄膜晶体管的方法。 包括氧化物半导体层的薄膜晶体管形成为形成电导率高于氧化物半导体层的缓冲层的方式，并且氧化物半导体层和源极和漏极电极层通过 缓冲层。 此外，在氮气气氛中对导电率高于氧化物半导体层的缓冲层进行反溅射处理和热处理。

公开(公告)号：US06531102B1

公开(公告)日：2003-03-11

申请号：US09559098

申请日：2000-04-27

申请人： Masahito Nakamura ,  Naoyuki Abe ,  Kiyoshi Kasahara ,  Shuichi Togasawa ,  Yuji Asano

发明人： Masahito Nakamura ,  Naoyuki Abe ,  Kiyoshi Kasahara ,  Shuichi Togasawa ,  Yuji Asano

IPC分类号： B01J1000

CPC分类号： F28D21/001 ,  B01B1/005 ,  B01J2219/00006 ,  C01B3/323 ,  C01B2203/00 ,  C01B2203/0233 ,  C01B2203/044 ,  C01B2203/047 ,  C01B2203/066 ,  C01B2203/0811 ,  C01B2203/0822 ,  C01B2203/0827 ,  C01B2203/0883 ,  C01B2203/1023 ,  C01B2203/1064 ,  C01B2203/1076 ,  C01B2203/1223 ,  C01B2203/1288 ,  C01B2203/1604 ,  F28D7/0075 ,  F28D7/0083 ,  F28D7/06 ,  F28D7/08 ,  F28D7/085 ,  F28D7/16 ,  F28D2021/0043 ,  F28D2021/0064 ,  H01M8/0612 ,  H01M8/0662 ,  Y02P20/128

摘要： A fuel reforming apparatus is provided for generating a hydrogen-rich gas. The fuel reforming apparatus includes an evaporator comprising an evaporation chamber for evaporating the fuel vapor by evaporating a hydrocarbon fuel-water mixture by an evaporator using a combustion gas formed in a combustor; a heating chamber for heating the fuel vapor by a combustion gas output from the evaporation chamber; and a guiding path for guiding the combustion gas output from the evaporation chamber to the heating chamber along the floor of the evaporating room. In the heating chamber, the fuel vapor generated in the evaporation chamber is uniformly heated in an atmosphere with a homogeneous temperature of the combustion gas output from a heating medium tube, while the fuel vapor is circulating in the vapor tube.

摘要翻译： 提供一种用于产生富氢气体的燃料重整装置。 燃料重整装置包括蒸发器，其包括蒸发室，用于通过使用形成在燃烧器中的燃烧气体通过蒸发器蒸发烃燃料 - 水混合物来蒸发燃料蒸气; 加热室，用于通过从蒸发室输出的燃烧气体来加热燃料蒸气; 以及用于将从蒸发室输出的燃烧气体沿着蒸发室的地板引导到加热室的引导路径。 在加热室中，在燃料蒸气在蒸气管中循环的同时，在蒸发室内产生的燃料蒸气在从加热介质管输出的燃烧气体的均匀温度的气氛中均匀地加热。

公开(公告)号：US5934546A

公开(公告)日：1999-08-10

申请号：US977446

申请日：1997-11-26

申请人： Ryotatsu Otsuka ,  Koji Ashida ,  Yuji Asano

发明人： Ryotatsu Otsuka ,  Koji Ashida ,  Yuji Asano

IPC分类号： B22D17/00 ,  B22D21/00 ,  B23K1/19 ,  B23K35/28 ,  B23K35/40 ,  C22C18/04 ,  B23K31/02

CPC分类号： B23K35/282 ,  B22D21/007 ,  B23K1/19 ,  B23K2203/10

摘要： A process for brazing a die-cast aluminum material, wherein a die-cast aluminum material produced at a gate speed of 20 m/s or higher is used to be brazed at a brazing temperature of 500.degree. C. or lower. Further, it is preferred that the die-cast aluminum material is produced under a casting pressure of 600 kgf/cm.sup.2 or lower, or that the die-cast aluminum material is produced while depressurizing a mold. Brazing may as well be conducted using a brazing filler metal material composed of 6 to 24 wt. % of Al and the balance consisting of Zn and impurities. In the foregoing manner, the die-cast aluminum material can be brazed by heating it to a high temperature.

摘要翻译： 一种用于钎焊压铸铝材料的方法，其中使用以20m / s或更高的闸门速度制造的压铸铝材料在500℃或更低的钎焊温度下钎焊。 此外，优选在600kgf / cm 2以下的铸造压力下制造压铸铝材料，或者在对模具进行减压的同时制造压铸铝材料。 也可以使用由6〜24重量份的钎料构成的钎料，进行钎焊。 Al的百分比，余量由Zn和杂质组成。 以上述方式，压铸铝材料可以通过将其加热到高温进行钎焊。

公开(公告)号：US5881240A

公开(公告)日：1999-03-09

申请号：US621096

申请日：1996-03-22

申请人： Yuji Asano

发明人： Yuji Asano

IPC分类号： H04N1/00 ,  H04N1/333 ,  G06F13/38 ,  G06F15/17

CPC分类号： H04N1/33376 ,  H04N1/00127 ,  H04N1/33323 ,  H04N1/00204 ,  H04N1/00278 ,  H04N2201/0015 ,  H04N2201/3335

摘要： Transmission, speed at which data is transmitted over a digital transmission line between a transmission device and a remote device, is set by transmitting an inquiry command to the remote device at a predetermined transmission speed; receiving, from the remote device, a response to the inquiry command; determining based on the content of the response any transmission speeds common between the remote device and the transmission device; and setting transmission speed at which transmission between the transmission device and a remote device is to be performed to one of the transmission speeds common between the remote device and the transmission device.

摘要翻译： 通过以预定的传输速度向远程设备发送查询命令来设置通过传输设备和远程设备之间的数字传输线传输数据的传输速度; 从所述远程设备接收对所述查询命令的响应; 基于所述响应的内容，确定所述远程设备与所述传输设备之间共同的任何传输速度; 并且将传输设备和远程设备之间的传输的传输速度设置为远程设备和传输设备之间公用的传输速度之一。

公开(公告)号：US5796493A

公开(公告)日：1998-08-18

申请号：US451116

申请日：1995-05-25

申请人： Suzuyo Murai ,  Yuji Asano

发明人： Suzuyo Murai ,  Yuji Asano

IPC分类号： H04N1/327 ,  H04N1/00

CPC分类号： H04N1/32708 ,  H04N1/32704

摘要： A facsimile machine including a first facsimile-data transmitter and/or a first facsimile-data receiver, a first telephone set, a data receiver including a connector connectable to an external computer for receiving, from the computer, designating data designating a second telephone set, and a calling device which calls the second telephone set designated by the designating data, so as to connect the first telephone set to the second telephone set via a communication line.

摘要翻译： 一种传真机，包括第一传真数据发送器和/或第一传真数据接收器，第一电话机，数据接收器，包括可连接到外部计算机的连接器，用于从计算机接收指定指定第二电话机的数据 以及呼叫设备，其呼叫由指定数据指定的第二电话机，以便经由通信线路将第一电话机连接到第二电话机。

公开(公告)号：US4873167A

公开(公告)日：1989-10-10

申请号：US165465

申请日：1988-03-08

申请人： Yuji Asano

发明人： Yuji Asano

IPC分类号： B41J31/05 ,  G03D13/00 ,  G03F7/00

CPC分类号： G03F7/002 ,  G03B2227/325

摘要： The disclosed is a cleaning sheet comprising second microcapsules, which encapsulate a solvent dissolvable of a photo-curable material, so that any radiation curable material sticking to a surface of a pressure roller member of a transfer imaging system will be efficiently cleaned away, thereby maintaining a constantly smooth surface of the pressure member which can then apply pressure onto the photo-pressure sensitive sheet uniformly, resulting in a unblemished transmittance of the original image.

摘要翻译： 所公开的是包含第二微胶囊的清洁片，其包封可溶解光可固化材料的溶剂，使得粘附到转印成像系统的压力辊构件的表面的任何可辐射固化材料将被有效地清除，从而保持 压力部件的光滑表面能够均匀地对压敏片施加压力，导致原始图像的无瑕疵透射。