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    METHOD AND SYSTEM FOR WIDELY TUNABLE LASER
    11.
    发明申请
    METHOD AND SYSTEM FOR WIDELY TUNABLE LASER 有权

    公开(公告)号：US20170110850A1

    公开(公告)日：2017-04-20

    申请号：US15285042

    申请日：2016-10-04

    Applicant: Skorpios Technologies, Inc.

    Inventor： Guoliang Li ,  Stephen B. Krasulick ,  Damien Lambert

    IPC: H01S5/068 ,  H01S5/02 ,  H01S5/022 ,  H01S5/40

    CPC classification number: H01S5/068 ,  H01S5/021 ,  H01S5/02284 ,  H01S5/0268 ,  H01S5/4012 ,  H01S5/4087

    Abstract: A widely tunable laser system includes a substrate, first and second lasers, an output and at least one optical combining device. The first laser is integrated with the substrate, includes a gain medium that includes a first material, and emits light at a wavelength that is tunable within a first wavelength range that is determined at least in part by the first material. The second laser is integrated with the substrate, includes a gain medium that includes a second material, and emits light at a wavelength that is tunable within a second wavelength range that is different from the first wavelength range that is determined at least in part by the second material. The at least one optical combining device is configured to direct light from one or both of the first laser and the second laser to the output.

    Method and system for performing testing of photonic devices
    13.
    发明授权
    Method and system for performing testing of photonic devices 有权
    用于执行光子器件测试的方法和系统

    公开(公告)号：US09236958B2

    公开(公告)日：2016-01-12

    申请号：US13959166

    申请日：2013-08-05

    Applicant: Skorpios Technologies, Inc.

    Inventor： Robert J. Stone ,  Stephen B. Krasulick

    IPC: G01R31/00 ,  G01R31/3187 ,  H04B17/00 ,  H04B10/073

    CPC classification number: G01J1/08 ,  G01J1/42 ,  G01J2001/083 ,  G01J2001/4247 ,  G01R31/3187 ,  H04B10/035 ,  H04B10/0731 ,  H04B10/0779 ,  H04B17/0082

    Abstract: A photonics system includes a transmit photonics module and a receive photonics module. The photonics system also includes a transmit waveguide coupled to the transmit photonics module, a first optical switch integrated with the transmit waveguide, and a diagnostics waveguide optically coupled to the first optical switch. The photonics system further includes a receive waveguide coupled to the receive photonics module and a second optical switch integrated with the receive waveguide and optically coupled to the diagnostics waveguide.

    Abstract translation: 光子系统包括发射光子模块和接收光子模块。 光子系统还包括耦合到发射光子模块的发射波导，与发射波导集成的第一光开关，以及光耦合到第一光开关的诊断波导。 光子系统还包括耦合到接收光子模块的接收波导和与接收波导集成并与光学耦合到诊断波导的第二光开关。

    VERTICAL INTEGRATION OF CMOS ELECTRONICS WITH PHOTONIC DEVICES
    15.
    发明申请
    VERTICAL INTEGRATION OF CMOS ELECTRONICS WITH PHOTONIC DEVICES 有权
    CMOS电子与光电器件的垂直集成

    公开(公告)号：US20150123157A1

    公开(公告)日：2015-05-07

    申请号：US14482650

    申请日：2014-09-10

    Applicant: Skorpios Technologies, Inc.

    Inventor： John Dallesasse ,  Stephen B. Krasulick ,  Timothy Creazzo ,  Elton Marchena

    IPC: H01L27/146 ,  H01L27/15

    CPC classification number: H01L27/14689 ,  H01L21/76254 ,  H01L21/8221 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/12 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/15

    Abstract: A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.

    Abstract translation: 制造复合半导体结构的方法包括提供包括多个硅基器件的SOI衬底，提供包括多个光子器件的化合物半导体衬底，以及切割化合物半导体衬底以提供多个光子管芯。 每个管芯包括多个光子器件中的一个或多个。 该方法还包括提供具有基底层和包括多个CMOS器件的器件层的组装衬底，将多个光子管芯安装在组件衬底的预定部分上，以及对准SOI衬底和组件衬底。 该方法还包括将SOI衬底和组件衬底接合以形成复合衬底结构，并从复合衬底结构去除组装衬底的至少基底层。

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