公开(公告)号：US07826254B2

公开(公告)日：2010-11-02

申请号：US11810835

申请日：2007-06-06

申请人： Susumu Haratani ,  Tohru Oikawa ,  Takashi Asatani

发明人： Susumu Haratani ,  Tohru Oikawa ,  Takashi Asatani

IPC分类号： G11C11/00

CPC分类号： H01L27/226 ,  G11C11/16 ,  H01L43/08

摘要： In the magnetic storage device, magnetization characteristics during write cycles are homogenized, and write cycles are carried out efficiently. In the magnetic storage device, the soft magnetic body is formed so as to cover the line either totally or partially, and the anti-ferromagnetic layer is formed on the outer surface of this soft magnetic body. Furthermore, the magneto-resistive element is disposed in the vicinity of the line. Suppose the case where the exchange coupling energy at the interface between the soft magnetic body and the anti-ferromagnetic layer is J (erg/cm2), the saturation magnetization of the soft magnetic body is Ms (emu/cc), and the coercive force of the soft magnetic body is Hc (Oe). Then, the thickness t (cm) of the soft magnetic body is selected to be such that t

摘要翻译： 在磁存储装置中，写入周期期间的磁化特性被均匀化，并且有效地执行写入周期。 在磁存储装置中，软磁体被形成为完全或部分地覆盖线，并且在该软磁体的外表面上形成反铁磁层。 此外，磁阻元件设置在线的附近。 假设在软磁体与反铁磁层之间的界面处的交换耦合能为J（erg / cm2）的情况下，软磁体的饱和磁化强度为Ms（emu / cc），矫顽力为 的软磁体是Hc（Oe）。 然后，软磁体的厚度t（cm）被选择为使得t

公开(公告)号：US07522450B2

公开(公告)日：2009-04-21

申请号：US10542623

申请日：2004-01-21

申请人： Joichiro Ezaki ,  Keiji Koga ,  Yuji Kakinuma ,  Susumu Haratani

发明人： Joichiro Ezaki ,  Keiji Koga ,  Yuji Kakinuma ,  Susumu Haratani

IPC分类号： G11C11/00

CPC分类号： H01L27/224 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/226 ,  H01L27/228

摘要： A magnetic storage cell being capable of stable writing and having little adverse influence on an adjacent magnetic storage cell, and a magnetic memory device using the magnetic storage cell, and its manufacturing method are provided. In the invention, a plurality of TMR devices (1a) (1b) each including a TMR film (S20) including a connecting portion (14) of which the magnetization direction is changed by an external magnetic field and a second magnetic layer (8) and allowing a current to flow therethrough in a direction perpendicular to a laminate surface, and a toroidal magnetic layer (4) disposed on a surface of the TMR film (S20) so that a direction along the laminate surface is an axial direction and a write bit line (5) and a write word line (6) penetrate through the toroidal magnetic layer (4) are included, and the TMR devices (1a), (1b) share a part of the toroidal magnetic layer (4) between them. Thereby, a decline in the magnitude of a circulating magnetic field in a closed magnetic path can be prevented, and the magnetizations of the connecting portion (14) and the second magnetic layer (8) can be reversed by a smaller write current.

摘要翻译： 一种能够稳定写入并且对相邻磁存储单元几乎没有不利影响的磁存储单元，以及使用该磁存储单元的磁存储器件及其制造方法。 在本发明中，包括TMR膜（S20）的多个TMR器件（1a）（1b），其包括通过外部磁场改变磁化方向的连接部分（14）和第二磁性层（8）， 并且允许电流在垂直于层叠表面的方向上流过;以及设置在TMR膜的表面上的环形磁性层（4），使得沿着层叠表面的方向是轴向方向和写入 包括贯穿环形磁性层（4）的位线（5）和写入字线（6），并且TMR器件（1a），（1b）共享它们之间的环形磁性层（4）的一部分。 因此，可以防止闭合磁路中的循环磁场的大小的下降，并且通过较小的写入电流可以使连接部分（14）和第二磁性层（8）的磁化反转。

公开(公告)号：US20070023807A1

公开(公告)日：2007-02-01

申请号：US11430630

申请日：2006-05-04

申请人： Susumu Haratani ,  Takashi Asatani

发明人： Susumu Haratani ,  Takashi Asatani

IPC分类号： H01L29/94

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： In a magnetic memory 1, a magneto-resistivity effect element 4 is disposed adjacently to a wire 5 for producing a writing magnetic field and further a ferromagnetic body 20 is disposed so as to cover at least part of the wire 5 and consequently orient the state X of magnetization of this ferromagnetic body 20 in one direction. According to this invention, it is made possible to homogenize the magnetic property during the course of writing and implement the writing work efficiently.

摘要翻译： 在磁存储器1中，磁电阻效应元件4被布置成与用于产生写入磁场的线5相邻，并且进一步地设置铁磁体20以便覆盖线5的至少一部分，并且因此使状态 该铁磁体20在一个方向上的磁化强度X。 根据本发明，可以在书写过程中使磁特性均匀化并有效地实现书写作业。

公开(公告)号：US20060067111A1

公开(公告)日：2006-03-30

申请号：US10542623

申请日：2004-01-21

申请人： Joichiro Ezaki ,  Keiji Koga ,  Yuji Kakinuma ,  Susumu Haratani

发明人： Joichiro Ezaki ,  Keiji Koga ,  Yuji Kakinuma ,  Susumu Haratani

IPC分类号： G11C11/00

CPC分类号： H01L27/224 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/226 ,  H01L27/228

摘要： A magnetic storage cell being capable of stable writing and having little adverse influence on an adjacent magnetic storage cell, and a magnetic memory device using the magnetic storage cell, and its manufacturing method are provided. In the invention, a plurality of TMR devices (1a) (1b) each including a TMR film (S20) including a connecting portion (14) of which the magnetization direction is changed by an external magnetic field and a second magnetic layer (8) and allowing a current to flow therethrough in a direction perpendicular to a laminate surface, and a toroidal magnetic layer (4) disposed on a surface of the TMR film (S20) so that a direction along the laminate surface is an axial direction and a write bit line (5) and a write word line (6) penetrate through the toroidal magnetic layer (4) are included, and the TMR devices (1a), (1b) share a part of the toroidal magnetic layer (4) between them. Thereby, a decline in the magnitude of a circulating magnetic field in a closed magnetic path can be prevented, and the magnetizations of the connecting portion (14) and the second magnetic layer (8) can be reversed by a smaller write current.

摘要翻译： 一种能够稳定写入并且对相邻磁存储单元几乎没有不利影响的磁存储单元，以及使用该磁存储单元的磁存储器件及其制造方法。 在本发明中，多个TMR器件（1a）（1b），每个TMR器件（1a）（1b）包括TMR膜（S 20），其包括通过外部磁场改变磁化方向的连接部分（14）和第二磁性层 （8），并允许电流沿垂直于层叠表面的方向流过;以及设置在TMR膜（S20）的表面上的环形磁性层（4），使得沿层压表面的方向为轴向 包括穿过环形磁性层（4）的写入位线（5）和写入字线（6），并且TMR器件（1a），（1b）共享环形磁性层 （4）之间。 因此，可以防止闭合磁路中的循环磁场的大小的下降，并且通过较小的写入电流可以使连接部分（14）和第二磁性层（8）的磁化反转。

公开(公告)号：US5498507A

公开(公告)日：1996-03-12

申请号：US394817

申请日：1995-02-27

申请人： Tokuhiko Handa ,  Ryo Inaba ,  Susumu Haratani ,  Junji Tominaga

发明人： Tokuhiko Handa ,  Ryo Inaba ,  Susumu Haratani ,  Junji Tominaga

IPC分类号： B41M5/26 ,  G11B7/0055 ,  G11B7/006 ,  G11B7/24 ,  G11B7/243 ,  G11B7/254

CPC分类号： G11B7/257 ,  G11B7/243 ,  G11B2007/24306 ,  G11B2007/24308 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B7/006 ,  G11B7/258 ,  G11B7/266 ,  Y10S430/146

摘要： In a phase change type of optical recording medium including on a substrate a lower dielectric layer, a recording layer, a first upper dielectric layer contiguous to said recording layer, a second upper dielectric layer and a reflective layer, the recording layer comprises a recording material containing an element A that represents silver and/or gold, an element B that represents antimony and/or bismuth, an element C that represents tellurium and/or selenium, an element indium, and an element M that represents at least one element selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, manganese, tungsten and molybdenum, with the atomic ratio of the elements in said recording material having the following formula:{(A.sub.a B.sub.b C.sub.1-a-b).sub.x (In.sub.0.5 C.sub.0.5).sub.y B.sub.1-x-y }.sub.1-z M.sub.zwherein 0.10.ltoreq.a.ltoreq.0.40, 0.10.ltoreq.b.ltoreq.0.40, 0.20.ltoreq.x.ltoreq.0.80, 0.01.ltoreq.y.ltoreq.0.60, and 0.001.ltoreq.z.ltoreq.0.20. The first upper dielectric layer contains at least one compound selected from the group consisting of aluminum nitride, silicone nitride and aluminum oxide. The second upper dielectric layer is made up of a material that has a thermal conductivity lower than that of said first upper dielectric layer.

摘要翻译： 在包括在基底上的下介电层，记录层，与所述记录层邻接的第一上电介质层，第二上电介质层和反射层的相变型光记录介质中，所述记录层包括记录材料 含有表示银和/或金的元素A，表示锑和/或铋的元素B，表示碲和/或硒的元素C，元素铟和元素M，其表示选自以下的至少一种元素： 由钛，锆，铪，钒，铌，钽，锰，钨和钼组成的组，所述记录材料中的元素的原子比具有下式：{（AaBbC1-ab）x（In0.5C0。 5）yB1-xy} 1-zMz其中0.10≤i≤0.40,0.10≤b≤0.40,0.20≤x≤0.80,0.01≤y≤0.60， 和0.001≤z≤0.20。 第一上介电层包含至少一种选自氮化铝，氮化硅和氧化铝的化合物。 第二上介电层由热导率低于所述第一上电介质层的材料构成。

公开(公告)号：US08326222B2

公开(公告)日：2012-12-04

申请号：US12659795

申请日：2010-03-22

申请人： Susumu Haratani ,  Hitoshi Yamaguchi ,  Masahiro Miyazaki ,  Yoshio Sase ,  Shigeru Shimura

发明人： Susumu Haratani ,  Hitoshi Yamaguchi ,  Masahiro Miyazaki ,  Yoshio Sase ,  Shigeru Shimura

IPC分类号： H04B5/00 ,  G02B27/00

CPC分类号： H04B5/0031 ,  H04B5/0081

摘要： A signal transmission device includes: an input signal conductor in which an input signal current flows and thereby generating an input signal magnetic field; a magnetically-biasing conductor in which a biasing current flows and thereby generating a biasing magnetic field; and one or more magnetoresistive elements in each of which a sensing current flows and thereby generating a self-biasing magnetic field, and each including a magnetization free layer having a magnetization direction which varies in response to the input signal magnetic field, the biasing magnetic field, and the self-biasing magnetic field. Each of the biasing magnetic field and the self-biasing magnetic field is applied to the magnetization free layer in a same direction to each other.

摘要翻译： 信号传输装置包括：输入信号导体，其中输入信号电流流动，从而产生输入信号磁场; 磁偏置导体，其中偏置电流流动，从而产生偏置磁场; 以及一个或多个磁阻元件，其中每一个感测电流流动，从而产生自偏置磁场，并且每个磁阻元件包括响应于输入信号磁场而变化的磁化方向的磁化自由层，偏置磁场 ，和自偏磁场。 偏置磁场和自偏磁场中的每一个以彼此相同的方向施加到磁化自由层。

公开(公告)号：US07956609B2

公开(公告)日：2011-06-07

申请号：US12053219

申请日：2008-03-21

申请人： Susumu Haratani ,  Hitoshi Yamaguchi ,  Naoki Ohta

发明人： Susumu Haratani ,  Hitoshi Yamaguchi ,  Naoki Ohta

IPC分类号： G01R33/02 ,  G01B7/30 ,  G01B7/14

CPC分类号： G01R33/093 ,  B82Y25/00

摘要： The magnetic sensor comprises a spin-valve GMR including a free layer having an elongated form as seen in a laminating direction and a permanent magnet layer having an elongated form as seen in the laminating direction. The permanent magnet layer is arranged in parallel with the free layer.

摘要翻译： 磁传感器包括自旋阀GMR，其包括在层叠方向上具有细长形状的自由层和在层叠方向上看到的具有细长形状的永久磁铁层。 永磁体层与自由层平行设置。

公开(公告)号：US20090121819A1

公开(公告)日：2009-05-14

申请号：US12289384

申请日：2008-10-27

申请人： Susumu Haratani ,  Hitoshi Yamaguchi

发明人： Susumu Haratani ,  Hitoshi Yamaguchi

IPC分类号： H01F17/02

CPC分类号： G01R33/09 ,  G01R33/091 ,  H01F5/003 ,  H01F38/14

摘要： A magnetic coupler having higher response is provided. The magnetic coupler includes a thin film coil wound in a first layer; a first MR element being disposed in a second layer, and detecting an induced magnetic field generated by a signal current flowing through the thin film coil; and yokes being disposed close to the first MR element, and including a soft magnetic material. The first MR element is disposed in a position corresponding to a linear region of the thin film coil in a stacking direction. The yokes are disposed at both of an inner turn side and an outer turn side of the thin film coil in a manner of interposing the first MR element in the second layer. Thus, reduction in intensity of the induced magnetic field is suppressed, and intensity distribution of the induced magnetic field becomes flatter.

摘要翻译： 提供了具有较高响应的磁耦合器。 磁耦合器包括缠绕在第一层中的薄膜线圈; 第一MR元件设置在第二层中，并且检测由流过薄膜线圈的信号电流产生的感应磁场; 并且轭设置成靠近第一MR元件，并且包括软磁材料。 第一MR元件被布置在与层叠方向上的薄膜线圈的线性区域对应的位置。 磁轭以将第一MR元件插入第二层的方式设置在薄膜线圈的内侧转弯侧和外侧转动侧。 因此，抑制感应磁场强度的降低，感应磁场的强度分布变得更平坦。

公开(公告)号：US20080006890A1

公开(公告)日：2008-01-10

申请号：US11810835

申请日：2007-06-06

申请人： Susumu Haratani ,  Tohru Oikawa ,  Takashi Asatani

发明人： Susumu Haratani ,  Tohru Oikawa ,  Takashi Asatani

IPC分类号： H01L29/82

CPC分类号： H01L27/226 ,  G11C11/16 ,  H01L43/08

摘要： In the magnetic storage device, magnetization characteristics during write cycles are homogenized, and write cycles are carried out efficiently. In the magnetic storage device, the soft magnetic body is formed so as to cover the line either totally or partially, and the anti-ferromagnetic layer is formed on the outer surface of this soft magnetic body. Furthermore, the magneto-resistive element is disposed in the vicinity of the line. Suppose the case where the exchange coupling energy at the interface between the soft magnetic body and the anti-ferromagnetic layer is J (erg/cm2), the saturation magnetization of the soft magnetic body is Ms (emu/cc), and the coercive force of the soft magnetic body is Hc (Oe). Then, the thickness t (cm) of the soft magnetic body is selected to be such that t

摘要翻译： 在磁存储装置中，写入周期期间的磁化特性被均匀化，并且有效地执行写入周期。 在磁存储装置中，软磁体被形成为完全或部分地覆盖线，并且在该软磁体的外表面上形成反铁磁层。 此外，磁阻元件设置在线的附近。 假设在软磁体与反铁磁体层之间的界面处的交换耦合能为J（erg / cm 2）的情况下，软磁体的饱和磁化强度为Ms（emu / cc），软磁体的矫顽力为Hc（Oe）。 然后，软磁体的厚度t（cm）被选择为使得t

公开(公告)号：US5637371A

公开(公告)日：1997-06-10

申请号：US600169

申请日：1996-02-12

申请人： Junji Tominaga ,  Ryo Inaba ,  Susumu Haratani

发明人： Junji Tominaga ,  Ryo Inaba ,  Susumu Haratani

IPC分类号： B41M5/26 ,  G01N25/02 ,  G11B7/006 ,  G11B7/243 ,  G11B7/26 ,  B32B3/00

CPC分类号： G11B7/243 ,  G11B2007/24306 ,  G11B2007/24308 ,  G11B2007/2431 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B7/006 ,  G11B7/2533 ,  G11B7/258 ,  G11B7/2585 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/21

摘要： An optical recording medium comprising a phase change recording layer and a dielectric layer on a substrate is improved in reliability during storage at elevated temperature when the recording layer has a composition of the following formula.[{(Ag,Au).sub.a (Sb,Bi).sub.b (Te,Se).sub.c }.sub.1-d (In,Al,P).sub.d ].sub.1-e M.sub.eLetters a to e are: 0

摘要翻译： 在记录层具有下式的组成的情况下，包括相变记录层和基板上的电介质层的光记录介质在高温储存时的可靠性提高[{（Ag，Au）a（Sb，Bi ）b（Te，Se）c} 1-d（In，Al，P）d] 1-eMeLetters a至e为：0