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公开(公告)号：US20240050987A1
公开(公告)日：2024-02-15
申请号：US17819044
申请日：2022-08-11
Inventor： MING-HSIEN YANG , CHUN-HAO CHOU , KUO-CHENG LEE , SHENG KAI YEH
CPC classification number: B06B1/0292 , B06B1/0666 , B06B2201/76 , A61B5/0095
Abstract: A semiconductor device and a method are provided. The semiconductor device includes a first semiconductor component, a bonding layer and a second semiconductor component. The first semiconductor component includes a first transistor formed on a substrate and a second transistor formed on the substrate and separated from the first transistor. The bonding layer is provided on the first semiconductor component. The second semiconductor component is provided on the bonding layer and includes an acoustic transducer. The acoustic transducer is controlled by the first transistor and the second transistor to execute a photoacoustic sensing. The acoustic transducer comprises a space gap and a least a portion of the space gap is surrounded by the bonding layer.
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公开(公告)号：US20240047487A1
公开(公告)日：2024-02-08
申请号：US17818344
申请日：2022-08-08
Inventor： FENG-CHIEN HSIEH , YUN-WEI CHENG , WEI-LI HU , KUO-CHENG LEE , CHENG-MING WU
IPC: H01L27/146
CPC classification number: H01L27/14605 , H01L27/1461 , H01L27/14607 , H01L27/1463 , H01L27/14641 , H01L27/14689 , H01L27/14698 , H01L27/1464 , H01L27/14645 , H01L27/14621
Abstract: An image sensor device includes a semiconductor substrate having a first side, and a trench isolation structure dividing the substrate into sensing units. Each sensing unit includes a first gate electrode and a second gate electrode disposed on the first side, and a first pixel and a second pixel extending into the substrate and disposed between the first and second gate electrodes from a top view perspective. The first pixel is disposed under the second pixel and electrically connected to the first gate electrode, and the second pixel is electrically connected to the second gate electrode. A method of manufacturing a semiconductor structure includes forming a trench isolation in a semiconductor substrate; forming a first pixel in the substrate; forming a second pixel in the substrate over the first pixel; forming a first gate structure over the substrate; and forming a second gate structure over the second pixel.
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公开(公告)号：US20240096917A1
公开(公告)日：2024-03-21
申请号：US18150798
申请日：2023-01-06
Inventor： PO CHUN CHANG , PING-HAO LIN , WEI-LIN CHEN , KUN-HUI LIN , KUO-CHENG LEE
IPC: H01L27/146
CPC classification number: H01L27/14629 , H01L27/1463 , H01L27/14636 , H01L27/14685
Abstract: An image sensor structure includes a semiconductor substrate, a plurality of image sensing elements, a reflective element, and a high-k dielectric structure. The image sensing elements are in the semiconductor substrate. The reflective element is in the semiconductor substrate and between the image sensing elements. The high-k dielectric structure is between the reflective element and the image sensing elements.
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Patent Agency Ranking
公开(公告)号：US20240055452A1
公开(公告)日：2024-02-15
申请号：US17818387
申请日：2022-08-09
Inventor： MING-HSIEN YANG , CHUN-LIANG LU , CHUN-HAO CHOU , KUO-CHENG LEE
IPC: H01L27/146
CPC classification number: H01L27/1462 , H01L27/14645 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14685
Abstract: A semiconductor image sensing structure includes a substrate, an isolation structure, an anti-reflection structure, at least one optical element and a transistor. The substrate has at least one photodiode region. The isolation structure is disposed in the substrate and surrounds the photodiode region. The anti-reflection structure covers the photodiode region. The optical element is disposed over the anti-reflection structure and corresponds to the photodiode region. The transistor is disposed under the photodiode region.
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公开(公告)号：US20240030256A1
公开(公告)日：2024-01-25
申请号：US17813947
申请日：2022-07-21
Inventor： WEI-LIN CHEN , YU-CHENG TSAI , CHUN-HAO CHOU , KUO-CHENG LEE
IPC: H01L27/146
CPC classification number: H01L27/14629 , H01L27/14649 , H01L27/1464 , H01L27/14614
Abstract: A semiconductor image sensing structure includes a semiconductor substrate having a front side and a back side, a pixel sensor disposed in the semiconductor substrate, a transistor disposed over the front side of the semiconductor substrate, and a reflective structure disposed over the front side of the semiconductor substrate. A gate structure of the transistor and the reflective structure include a same material. A top surface of the gate structure of the transistor and a top surface of the reflective structure are aligned with each other.
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16.发明申请INTEGRATED CIRCUIT AND IMAGE SENSING DEVICE HAVING METAL SHIELDING LAYER AND RELATED FABRICATING METHOD 有权具有金属屏蔽层的集成电路和图像感测装置及相关制造方法公开(公告)号：US20160240574A1
公开(公告)日：2016-08-18
申请号：US14854715
申请日：2015-09-15
Inventor： TSUNG-HAN TSAI , YUN-WEI CHENG , CHUN-HAO CHOU , KUO-CHENG LEE , YUNG-LUNG HSU , HSIN-CHI CHEN
IPC: H01L27/146
CPC classification number: H01L27/14623 , H01L27/14634 , H01L27/1469
Abstract: An integrated circuit includes a first semiconductor device, a second semiconductor device, and a metal shielding layer. The first semiconductor device includes a first substrate and a first multi-layer structure, and the first substrate supports the first multi-layer structure. The second semiconductor device includes a second substrate and a second multi-layer structure, and the second substrate supports the second multi-layer structure. The metal shielding layer is disposed between the first multi-layer structure and the second multi-layer structure, wherein the metal shielding layer is electrically connected to the second semiconductor device.
Abstract translation: 集成电路包括第一半导体器件，第二半导体器件和金属屏蔽层。 第一半导体器件包括第一衬底和第一多层结构，并且第一衬底支撑第一多层结构。 第二半导体器件包括第二衬底和第二多层结构，第二衬底支撑第二多层结构。 金属屏蔽层设置在第一多层结构和第二多层结构之间，其中金属屏蔽层电连接到第二半导体器件。
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公开(公告)号：US20160211290A1
公开(公告)日：2016-07-21
申请号：US14600684
申请日：2015-01-20
Inventor： TSUNG-HAN TSAI , YUN-WEI CHENG , CHUN-HAO CHOU , KUO-CHENG LEE , YUNG-LUNG HSU
IPC: H01L27/146
CPC classification number: H01L27/1464 , H01L27/14603 , H01L27/1463 , H01L27/14685 , H01L27/14687 , H01L27/14689
Abstract: A back side illuminated (BSI) image sensor device, includes: a substrate including a front side and a back side opposite to the front side; a radiation-sensing region disposed in the substrate; and a deep trench isolation (DTI) grid disposed in the substrate and defining the radiation-sensing region. The DTI grid extends from the back side toward the front side, and includes a segmented strip in a top view from the back side.
Abstract translation: 背面照明（BSI）图像传感器装置，包括：基板，包括前侧和与前侧相对的后侧; 设置在所述基板中的辐射感测区域; 以及设置在衬底中并限定辐射感测区域的深沟槽隔离（DTI）栅格。 DTI格栅从背面向前侧延伸，并且包括从背面俯视图的分段条。
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公开(公告)号：US20160148969A1
公开(公告)日：2016-05-26
申请号：US14554629
申请日：2014-11-26
Inventor： TSUNG-HAN TSAI , YUN-WEI CHENG , KUO-CHENG LEE , CHUN-HAO CHOU , YUNG-LUNG HSU
IPC: H01L27/146
CPC classification number: H01L27/14645 , H01L27/14612 , H01L27/14621 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L27/14689
Abstract: Some embodiments of the present disclosure provide a method of manufacturing a back side illuminated (BSI) image sensor. The method includes receiving a semiconductive substrate; forming a transistor coupled to a photosensitive element at a front side of the semiconductive substrate; forming a deep trench isolation (DTI) at a back side of the semiconductive substrate; forming a doped layer conformally over the DTI; performing a microwave anneal over the back side; forming a non-transparent material inside the DTI; and forming a color filter over the doped layer.
Abstract translation: 本公开的一些实施例提供制造背面照明（BSI）图像传感器的方法。 该方法包括接收半导体衬底; 形成耦合到所述半导体衬底的前侧处的感光元件的晶体管; 在半导体衬底的背面形成深沟槽隔离（DTI）; 在DTI上共形形成掺杂层; 在背面进行微波退火; 在DTI内形成不透明材料; 以及在所述掺杂层上形成滤色器。
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