公开(公告)号：US20230253161A1

公开(公告)日：2023-08-10

申请号：US18012518

申请日：2020-12-24

Applicant: TDK Corporation

Inventor： Daiki ISHII ,  Yoshihiko YANO ,  Yuki YAMASHITA ,  Kenichi YOSHIDA ,  Tetsuhiro TAKAHASHI

IPC: H01G4/33 ,  H01L25/16 ,  H01G4/01 ,  H01G4/012 ,  H01G4/10 ,  H01G4/12

CPC classification number: H01G4/33 ,  H01L25/16 ,  H01G4/01 ,  H01G4/012 ,  H01G4/10 ,  H01G4/1218 ,  H01G4/1254 ,  H01G4/1209 ,  H01L24/16

Abstract: To provide a thin film capacitor having high adhesion performance with respect to a circuit substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. The first and second electrode layers are formed in an area surrounded by an outer peripheral area of the upper surface of the metal foil so as not to cover the outer peripheral area. The outer peripheral area of the roughened upper surface of the metal foil is thus exposed, so that adhesion performance with respect to a circuit substrate can be enhanced.

公开(公告)号：US20230268125A1

公开(公告)日：2023-08-24

申请号：US18012145

申请日：2020-12-24

Applicant: TDK Corporation

Inventor： Daiki ISHII ,  Yoshihiko YANO ,  Yuki YAMASHITA ,  Kenichi YOSHIDA ,  Tetsuhiro TAKAHASHI

IPC: H01G4/06 ,  H01G4/33 ,  H01G4/005 ,  H05K1/18

CPC classification number: H01G4/06 ,  H01G4/33 ,  H01G4/005 ,  H05K1/18 ,  H05K2201/10015

Abstract: To provide a thin film capacitor in which warpage is less likely to occur. A thin film capacitor includes: a metal foil having roughened upper and lower surfaces; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a dielectric film covering the lower surface of the metal foil and made of a dielectric material having a thermal expansion coefficient smaller than that of the metal foil; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the first dielectric film without contacting the metal foil. The lower surface of the metal foil is thus covered with the dielectric film having a small thermal expansion coefficient, thereby making it possible to prevent the occurrence of warpage.

公开(公告)号：US20230260698A1

公开(公告)日：2023-08-17

申请号：US18012834

申请日：2020-12-24

Applicant: TDK Corporation

Inventor： Daiki ISHII ,  Yoshihiko YANO ,  Yuki YAMASHITA ,  Kenichi YOSHIDA ,  Tetsuhiro TAKAHASHI

IPC: H01G4/01 ,  H01L25/16 ,  H01G4/33

CPC classification number: H01G4/01 ,  H01L25/16 ,  H01G4/33 ,  H01L24/16

Abstract: To provide a thin film capacitor having high flexibility. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. The particle diameter of crystal at a non-roughened center part of the metal foil is less than 15 μm in the planar direction and less than 5 μm in the thickness direction. This can not only enhance the flexibility of the metal foil to reduce a short-circuit failure in a state where the thin film capacitor is incorporated in a multilayer substrate but also enhance positional accuracy.

公开(公告)号：US20230085744A1

公开(公告)日：2023-03-23

申请号：US17945593

申请日：2022-09-15

Applicant: TDK CORPORATION

Inventor： Tetsuhiro TAKAHASHI ,  Toshihiro IGUCHI ,  Hiroki AKIBA ,  Ryota NOMURA

IPC: C04B35/495 ,  C04B35/626 ,  C04B35/64 ,  C04B35/634 ,  C04B35/638 ,  H01G4/12

Abstract: Provided is a dielectric composition containing: a main component expressed by {BaxSr(1-x)}mTa4O12; and a first subcomponent, m satisfying a relationship of 1.95≤m≤2.40. The first subcomponent includes silicon and manganese. When the amount of the main component contained in the dielectric composition is set to 100 parts by mole, the amount of silicon contained in the dielectric composition is 5.0 to 20.0 parts by mole in terms of SiO2, and the amount of manganese contained in the dielectric composition is 1.0 to 4.5 parts by mole in terms of MnO.

公开(公告)号：US20220227673A1

公开(公告)日：2022-07-21

申请号：US17558077

申请日：2021-12-21

Applicant: TDK CORPORATION

Inventor： Toshihiro IGUCHI ,  Tetsuhiro TAKAHASHI ,  Hiroki AKIBA ,  Ryota NOMURA

IPC: C04B35/495 ,  H01G4/12

Abstract: In order to provide a dielectric composition having high density even when fired at a relatively low temperature, the main component of a dielectric composition includes tantalum and at least one of barium or strontium, and the subcomponent of the dielectric composition includes at least one element selected from the group consisting of vanadium, titanium, and aluminum.

公开(公告)号：US20210027945A1

公开(公告)日：2021-01-28

申请号：US16932298

申请日：2020-07-17

Applicant: TDK CORPORATION

Inventor： Tetsuhiro TAKAHASHI ,  Tomohisa FUKUOKA

IPC: H01G4/232

Abstract: The present invention relates to a ceramic electronic device including a ceramic body having ceramic layers and internal electrode layers stacked in alternating manner and a terminal electrode formed at an end face of the ceramic body. The terminal electrode includes a base electrode including a metal component and a glass component, an intermediate electrode layer including Ni and formed at an outer face of the base electrode layer, and an upper electrode layer including Pd or Au and formed at an outer face of the intermediate electrode layer. Also, a surface roughness Ra1 of the base electrode layer in the terminal electrode is 5.0 μm or less; or the surface roughness Ra1 of the base electrode layer, a surface roughness Ra2 of the intermediate electrode layer, and a surface roughness Ra3 of the upper electrode layer satisfy a relationship of Ra1>Ra3≥Ra2.

公开(公告)号：US20180240594A1

公开(公告)日：2018-08-23

申请号：US15900084

申请日：2018-02-20

Applicant: TDK CORPORATION

Inventor： Ryota NOMURA ,  Hiroki AKIBA ,  Sanshiro AMAN ,  Tetsuhiro TAKAHASHI

IPC: H01G4/12 ,  H01G4/30 ,  H01G4/008 ,  H01G4/012 ,  C04B35/49 ,  C04B35/495

CPC classification number: H01G4/1227 ,  C04B35/465 ,  C04B35/4686 ,  C04B35/47 ,  C04B35/49 ,  C04B35/495 ,  C04B35/6261 ,  C04B35/6262 ,  C04B35/638 ,  C04B35/64 ,  C04B2235/3203 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3287 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6582 ,  H01G4/008 ,  H01G4/012 ,  H01G4/1236 ,  H01G4/1254 ,  H01G4/1263 ,  H01G4/30

Abstract: A dielectric composition comprising a main component expressed by a chemical formula of (A6-xBxCx+2D8-xO30, 0≤x≤5), wherein said “A” component is at least one element selected form the group consisting of Ba, Ca, and Sr, said “B” component is at least one element selected from the group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, said “C” component is at least one element selected from the group consisting of Ti, and Zr, said “D” component is at least one element selected from the group consisting of Nb, and Ta, and said dielectric composition comprises 2.50 mol or more and 20.00 mol or less of an oxide of Ge as a first sub component with respect to 100 mol of said main component.